MECHANISM OF BIT LINE MODE SOFT ERROR FOR DRAM.

Mikio Asakura, Yoshio Matsuda, Katsuhiro Tsukamoto, Kazuyasu Fujishima, Tsutomu Yoshihara

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

This letter reports a charge collection experiment of alpha-particle-induced carriers in the cell arrays of the 1 Mb DRAM. It is indicated that this experiment is effective to estimate the soft error rate of VLSI memories with various kinds of structures.

Original languageEnglish
Title of host publicationTransactions of the Institute of Electronics, Information and Communication Engineers, Section E (
Pages1060-1061
Number of pages2
VolumeE70
Edition11
Publication statusPublished - 1987 Nov
Externally publishedYes
EventPap from the 1987 Natl Conf on Semicond Devices and Mater IEICE - Kumamoto, Jpn
Duration: 1987 Nov 11987 Nov 4

Other

OtherPap from the 1987 Natl Conf on Semicond Devices and Mater IEICE
CityKumamoto, Jpn
Period87/11/187/11/4

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Asakura, M., Matsuda, Y., Tsukamoto, K., Fujishima, K., & Yoshihara, T. (1987). MECHANISM OF BIT LINE MODE SOFT ERROR FOR DRAM. In Transactions of the Institute of Electronics, Information and Communication Engineers, Section E ( (11 ed., Vol. E70, pp. 1060-1061)