Mechanism of superior suppression effect on gate current leakage in ultrathin Al2O3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors

Chengxin Wang, Narihiko Maeda, Masanobu Hiroki, Haruki Yokoyama, Noriyuki Watanabe, Toshiki Makimoto, Takotoino Enoki, Takashi Kobayashi

Research output: Contribution to journalArticle

12 Citations (Scopus)


On the basis of the thin barrier surface (TSB) model, the mechanism of gate current leakage under reverse gate-source bias in nitride-based heterostructure field effect transistors (HFETs) and metal-insulator-semiconductor (MIS) HFETs with an ultrathin (1 nm/0.5 nm) Al2O3/Si3N 4 bilayer has been investigated. The simulations show that the electron tunneling through the Schottky barrier is the dominant mechanism for gate current in conventional HFETs due to the high density of donor like defects on the surface. An Al2O3/Si3N4 bilayer insulator can substantially reduce the donor like surface defect density and then significantly suppress the gate current leakage in nitrides-base MIS-HFET devices.

Original languageEnglish
Pages (from-to)40-42
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number1 A
Publication statusPublished - 2006 Jan 10
Externally publishedYes



  • Alo /SiN dielectric layer
  • Current tunneling
  • Field-effect transistor
  • Gate current leakage
  • Metal-insulator-semiconductor
  • Thin surface barrier model

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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