Mechanism of superior suppression effect on gate current leakage in ultrathin Al2O3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors

Chengxin Wang, Narihiko Maeda, Masanobu Hiroki, Haruki Yokoyama, Noriyuki Watanabe, Toshiki Makimoto, Takotoino Enoki, Takashi Kobayashi

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

On the basis of the thin barrier surface (TSB) model, the mechanism of gate current leakage under reverse gate-source bias in nitride-based heterostructure field effect transistors (HFETs) and metal-insulator-semiconductor (MIS) HFETs with an ultrathin (1 nm/0.5 nm) Al2O3/Si3N 4 bilayer has been investigated. The simulations show that the electron tunneling through the Schottky barrier is the dominant mechanism for gate current in conventional HFETs due to the high density of donor like defects on the surface. An Al2O3/Si3N4 bilayer insulator can substantially reduce the donor like surface defect density and then significantly suppress the gate current leakage in nitrides-base MIS-HFET devices.

Original languageEnglish
Pages (from-to)40-42
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number1 A
DOIs
Publication statusPublished - 2006 Jan 10
Externally publishedYes

Fingerprint

MOSFET devices
High electron mobility transistors
Leakage currents
leakage
field effect transistors
retarding
MIS (semiconductors)
Nitrides
nitrides
Semiconductor materials
Electron tunneling
Defect density
Surface defects
surface defects
electron tunneling
Metals
insulators
Defects
defects
simulation

Keywords

  • Alo /SiN dielectric layer
  • Current tunneling
  • Field-effect transistor
  • Gate current leakage
  • Metal-insulator-semiconductor
  • Thin surface barrier model

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Mechanism of superior suppression effect on gate current leakage in ultrathin Al2O3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors. / Wang, Chengxin; Maeda, Narihiko; Hiroki, Masanobu; Yokoyama, Haruki; Watanabe, Noriyuki; Makimoto, Toshiki; Enoki, Takotoino; Kobayashi, Takashi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 1 A, 10.01.2006, p. 40-42.

Research output: Contribution to journalArticle

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AU - Wang, Chengxin

AU - Maeda, Narihiko

AU - Hiroki, Masanobu

AU - Yokoyama, Haruki

AU - Watanabe, Noriyuki

AU - Makimoto, Toshiki

AU - Enoki, Takotoino

AU - Kobayashi, Takashi

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