Mechanism of the chemical deposition of nickel on silicon wafers in aqueous solution

Nao Takano, Naohiro Hosoda, Taro Yamada, Tetsuya Osaka

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

The deposition of metallic nickel on n-Si(100) wafers was performed without external potential control in aqueous NiSO4 solutions of different compositions at pH 8.0. Without giving any catalyzation treatment, the deposition of nickel on hydrogen-terminated Si(100) was confirmed in a conventional electroless plating bath containing NaH2PO2 as the reducing agent, sodium citrate as the complexing agent, and (NH4)2SO4 as the buffering agent. The deposition of nickel was found to take place also in a bath without the reducing agent, and even in a simple solution consisting of NiSO4 and (NH4)2SO4. By using a transmission electron microscope equipped with an energy dispersive X-ray spectrometer, the cross sections of the films deposited from these solutions were examined, which revealed formation of silicon oxide between the Ni deposit and Si substrate. Based on these results, the mechanism of the entire process of electroless Ni deposition on Si is discussed.

Original languageEnglish
Pages (from-to)1407-1411
Number of pages5
JournalJournal of the Electrochemical Society
Volume146
Issue number4
DOIs
Publication statusPublished - 1999 Apr

Fingerprint

Nickel
Silicon wafers
nickel
wafers
aqueous solutions
Reducing Agents
Reducing agents
silicon
baths
X ray spectrometers
electroless deposition
Electroless plating
Silicon oxides
citrates
silicon oxides
plating
Hydrogen
Electron microscopes
Deposits
electron microscopes

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Mechanism of the chemical deposition of nickel on silicon wafers in aqueous solution. / Takano, Nao; Hosoda, Naohiro; Yamada, Taro; Osaka, Tetsuya.

In: Journal of the Electrochemical Society, Vol. 146, No. 4, 04.1999, p. 1407-1411.

Research output: Contribution to journalArticle

Takano, Nao ; Hosoda, Naohiro ; Yamada, Taro ; Osaka, Tetsuya. / Mechanism of the chemical deposition of nickel on silicon wafers in aqueous solution. In: Journal of the Electrochemical Society. 1999 ; Vol. 146, No. 4. pp. 1407-1411.
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