Mechanisms Controlling Preferred Orientation of Chemical Vapour Deposited Polycrystalline Films

Yuya Kajikawa, Suguru Noda, Hiroshi Komiyama

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

In the absence of epitaxy between a film and a substrate, the preferred orientation of poly crystal line films can often be explained by the "evolutionary selection rule", which states that grains with the fastest growing direction normal to the substrate envelope the other grains and determine the final orientation of the film. However, the mechanism determining the fastest growing plane and the factors affecting the growth rates of each plane are still not well understood. We examined existing experimental results in the previous literatures and found a correlation between process conditions and preferred orientation for poly-Si and poly-SiC thin films. We present a model based on Langmuir-type adsorption for predicting preferred orientation, which agrees well with experimental results in the previous literatures for Si and SiC.

Original languageEnglish
Pages (from-to)411-416
Number of pages6
JournalSolid State Phenomena
Volume93
DOIs
Publication statusPublished - 2003 Jan 1
Externally publishedYes
EventPolycrystalline Semiconductors VII - Nara, United States
Duration: 2003 Sep 102003 Sep 13

Keywords

  • Chemical Vapor Deposition
  • Preferred Orientation
  • Silicon
  • Silicon Carbide
  • Texture

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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