Mechanisms Controlling Preferred Orientation of Chemical Vapour Deposited Polycrystalline Films

Yuya Kajikawa, Suguru Noda, Hiroshi Komiyama

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In the absence of epitaxy between a film and a substrate, the preferred orientation of poly crystal line films can often be explained by the "evolutionary selection rule", which states that grains with the fastest growing direction normal to the substrate envelope the other grains and determine the final orientation of the film. However, the mechanism determining the fastest growing plane and the factors affecting the growth rates of each plane are still not well understood. We examined existing experimental results in the previous literatures and found a correlation between process conditions and preferred orientation for poly-Si and poly-SiC thin films. We present a model based on Langmuir-type adsorption for predicting preferred orientation, which agrees well with experimental results in the previous literatures for Si and SiC.

Original languageEnglish
Pages (from-to)411-416
Number of pages6
JournalSolid State Phenomena
Volume93
Publication statusPublished - 2003
Externally publishedYes

Fingerprint

Vapors
vapors
Substrates
Epitaxial growth
Polysilicon
Crystal orientation
epitaxy
Adsorption
Thin films
Crystals
envelopes
adsorption
thin films
crystals
Direction compound

Keywords

  • Chemical Vapor Deposition
  • Preferred Orientation
  • Silicon
  • Silicon Carbide
  • Texture

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Mechanisms Controlling Preferred Orientation of Chemical Vapour Deposited Polycrystalline Films. / Kajikawa, Yuya; Noda, Suguru; Komiyama, Hiroshi.

In: Solid State Phenomena, Vol. 93, 2003, p. 411-416.

Research output: Contribution to journalArticle

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