Membrane buried-heterostructure DFB laser with an optically coupled III-V/Si waveguide

Takuma Aihara*, Tatsurou Hiraki, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


We have developed a membrane buried-heterostructure (BH) distributed feedback (DFB) laser consisting of an optically coupled III-V/Si waveguide and SiN surface grating. A 230-nm-thick membrane III-V layer enables us to construct an optical supermode in a 220-nm-thick Si waveguide and control the optical confinement factor in both the III-V and Si layers by changing Si waveguide width. This makes it possible to use a conventional Si photonics platform because the Si waveguides widely used on it are around 220-nm thick. To fabricate the BH—the key component for constructing a membrane laser with a lateral current-injection structure—we used direct wafer bonding and regrowth by metalorganic vapor phase epitaxy. Light output from the DFB laser is transferred to the Si waveguide through a short inverse-taper InP waveguide. A fiber-chip interface constructed by using inverse-taper Si waveguides and SiOx waveguides provides 2-dB fiber coupling loss. Fiber coupling power of 7.9 mW is obtained with a λ/4-shifted DFB laser with a 500-µm-long cavity. Single-mode lasing with a side-mode suppression ratio of 50 dB and lasing up to 120°C are also demonstrated.

Original languageEnglish
Pages (from-to)36438-36448
Number of pages11
JournalOptics Express
Issue number25
Publication statusPublished - 2019 Dec 9
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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