Membrane distributed-reflector lasers with 20-μm-long DFB section and front/rear DBRs on Si substrates

Erina Kanno, Koji Takeda, Takuro Fujii, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have developed distributed reflector lasers that include a 20-μm-long DFB section on SiO 2 /Si substrates to reduce power consumption. By employing DBRs for both sides of the DFB section, we achieve a threshold current of 0.66 mA with a grating coupling coefficient of 900 cm -1 (DBR) and 820 cm -1 (DFB).

Original languageEnglish
Title of host publication2016 International Semiconductor Laser Conference, ISLC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784885523069
Publication statusPublished - 2016 Dec 2
Externally publishedYes
Event2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan
Duration: 2016 Sep 122016 Sep 15

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406

Other

Other2016 International Semiconductor Laser Conference, ISLC 2016
CountryJapan
CityKobe
Period16/9/1216/9/15

Fingerprint

reflectors
Electric power utilization
membranes
Membranes
Lasers
Substrates
coupling coefficients
threshold currents
lasers
gratings

Keywords

  • Distributed reflector laser
  • DR laser
  • Semiconductor laser
  • Short cavity laser
  • Silicon photonics
  • Wafer bonding

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Kanno, E., Takeda, K., Fujii, T., Hasebe, K., Nishi, H., Yamamoto, T., ... Matsuo, S. (2016). Membrane distributed-reflector lasers with 20-μm-long DFB section and front/rear DBRs on Si substrates. In 2016 International Semiconductor Laser Conference, ISLC 2016 [7765712] (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc..

Membrane distributed-reflector lasers with 20-μm-long DFB section and front/rear DBRs on Si substrates. / Kanno, Erina; Takeda, Koji; Fujii, Takuro; Hasebe, Koichi; Nishi, Hidetaka; Yamamoto, Tsuyoshi; Kakitsuka, Takaaki; Matsuo, Shinji.

2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7765712 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kanno, E, Takeda, K, Fujii, T, Hasebe, K, Nishi, H, Yamamoto, T, Kakitsuka, T & Matsuo, S 2016, Membrane distributed-reflector lasers with 20-μm-long DFB section and front/rear DBRs on Si substrates. in 2016 International Semiconductor Laser Conference, ISLC 2016., 7765712, Conference Digest - IEEE International Semiconductor Laser Conference, Institute of Electrical and Electronics Engineers Inc., 2016 International Semiconductor Laser Conference, ISLC 2016, Kobe, Japan, 16/9/12.
Kanno E, Takeda K, Fujii T, Hasebe K, Nishi H, Yamamoto T et al. Membrane distributed-reflector lasers with 20-μm-long DFB section and front/rear DBRs on Si substrates. In 2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7765712. (Conference Digest - IEEE International Semiconductor Laser Conference).
Kanno, Erina ; Takeda, Koji ; Fujii, Takuro ; Hasebe, Koichi ; Nishi, Hidetaka ; Yamamoto, Tsuyoshi ; Kakitsuka, Takaaki ; Matsuo, Shinji. / Membrane distributed-reflector lasers with 20-μm-long DFB section and front/rear DBRs on Si substrates. 2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (Conference Digest - IEEE International Semiconductor Laser Conference).
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