Membrane distributed-reflector lasers with 20-μm-long DFB section and front/rear DBRs on Si substrates

Erina Kanno; Koji Takeda; Takuro Fujii; Koichi Hasebe; Hidetaka Nishi; Tsuyoshi Yamamoto; Takaaki Kakitsuka; Shinji Matsuo

Membrane distributed-reflector lasers with 20-μm-long DFB section and front/rear DBRs on Si substrates

Erina Kanno, Koji Takeda, Takuro Fujii, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have developed distributed reflector lasers that include a 20-μm-long DFB section on SiO ₂ /Si substrates to reduce power consumption. By employing DBRs for both sides of the DFB section, we achieve a threshold current of 0.66 mA with a grating coupling coefficient of 900 cm ^-1 (DBR) and 820 cm ^-1 (DFB).

Original language	English
Title of host publication	2016 International Semiconductor Laser Conference, ISLC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784885523069
Publication status	Published - 2016 Dec 2
Externally published	Yes
Event	2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan Duration: 2016 Sep 12 → 2016 Sep 15

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)	0899-9406

Other

Other	2016 International Semiconductor Laser Conference, ISLC 2016
Country	Japan
City	Kobe
Period	16/9/12 → 16/9/15

Keywords

Distributed reflector laser
DR laser
Semiconductor laser
Short cavity laser
Silicon photonics
Wafer bonding

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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Cite this

Kanno, E., Takeda, K., Fujii, T., Hasebe, K., Nishi, H., Yamamoto, T., Kakitsuka, T., & Matsuo, S. (2016). Membrane distributed-reflector lasers with 20-μm-long DFB section and front/rear DBRs on Si substrates. In 2016 International Semiconductor Laser Conference, ISLC 2016 [7765712] (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc..

Membrane distributed-reflector lasers with 20-μm-long DFB section and front/rear DBRs on Si substrates. / Kanno, Erina; Takeda, Koji; Fujii, Takuro; Hasebe, Koichi; Nishi, Hidetaka; Yamamoto, Tsuyoshi; Kakitsuka, Takaaki; Matsuo, Shinji.

2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7765712 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kanno, E, Takeda, K, Fujii, T, Hasebe, K, Nishi, H, Yamamoto, T, Kakitsuka, T & Matsuo, S 2016, Membrane distributed-reflector lasers with 20-μm-long DFB section and front/rear DBRs on Si substrates. in 2016 International Semiconductor Laser Conference, ISLC 2016., 7765712, Conference Digest - IEEE International Semiconductor Laser Conference, Institute of Electrical and Electronics Engineers Inc., 2016 International Semiconductor Laser Conference, ISLC 2016, Kobe, Japan, 16/9/12.

Kanno E, Takeda K, Fujii T, Hasebe K, Nishi H, Yamamoto T et al. Membrane distributed-reflector lasers with 20-μm-long DFB section and front/rear DBRs on Si substrates. In 2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7765712. (Conference Digest - IEEE International Semiconductor Laser Conference).

Kanno, Erina ; Takeda, Koji ; Fujii, Takuro ; Hasebe, Koichi ; Nishi, Hidetaka ; Yamamoto, Tsuyoshi ; Kakitsuka, Takaaki ; Matsuo, Shinji. / Membrane distributed-reflector lasers with 20-μm-long DFB section and front/rear DBRs on Si substrates. 2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (Conference Digest - IEEE International Semiconductor Laser Conference).

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abstract = " We have developed distributed reflector lasers that include a 20-μm-long DFB section on SiO 2 /Si substrates to reduce power consumption. By employing DBRs for both sides of the DFB section, we achieve a threshold current of 0.66 mA with a grating coupling coefficient of 900 cm -1 (DBR) and 820 cm -1 (DFB). ",

keywords = "Distributed reflector laser, DR laser, Semiconductor laser, Short cavity laser, Silicon photonics, Wafer bonding",

author = "Erina Kanno and Koji Takeda and Takuro Fujii and Koichi Hasebe and Hidetaka Nishi and Tsuyoshi Yamamoto and Takaaki Kakitsuka and Shinji Matsuo",

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AU - Hasebe, Koichi

AU - Nishi, Hidetaka

AU - Yamamoto, Tsuyoshi

AU - Kakitsuka, Takaaki

AU - Matsuo, Shinji

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KW - Semiconductor laser

KW - Short cavity laser

KW - Silicon photonics

KW - Wafer bonding

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