Membrane distributed-reflector lasers with 20-μm-long DFB section and front/rear DBRs on Si substrates

Erina Kanno, Koji Takeda, Takuro Fujii, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have developed distributed reflector lasers that include a 20-μm-long DFB section on SiO 2 /Si substrates to reduce power consumption. By employing DBRs for both sides of the DFB section, we achieve a threshold current of 0.66 mA with a grating coupling coefficient of 900 cm -1 (DBR) and 820 cm -1 (DFB).

Original languageEnglish
Title of host publication2016 International Semiconductor Laser Conference, ISLC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784885523069
Publication statusPublished - 2016 Dec 2
Externally publishedYes
Event2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan
Duration: 2016 Sep 122016 Sep 15

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406

Other

Other2016 International Semiconductor Laser Conference, ISLC 2016
CountryJapan
CityKobe
Period16/9/1216/9/15

Keywords

  • Distributed reflector laser
  • DR laser
  • Semiconductor laser
  • Short cavity laser
  • Silicon photonics
  • Wafer bonding

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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