Abstract
We have developed distributed reflector lasers that include a 20-μm-long DFB section on SiO 2 /Si substrates to reduce power consumption. By employing DBRs for both sides of the DFB section, we achieve a threshold current of 0.66 mA with a grating coupling coefficient of 900 cm -1 (DBR) and 820 cm -1 (DFB).
| Original language | English |
|---|---|
| Title of host publication | 2016 International Semiconductor Laser Conference, ISLC 2016 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9784885523069 |
| Publication status | Published - 2016 Dec 2 |
| Externally published | Yes |
| Event | 2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan Duration: 2016 Sep 12 → 2016 Sep 15 |
Publication series
| Name | Conference Digest - IEEE International Semiconductor Laser Conference |
|---|---|
| ISSN (Print) | 0899-9406 |
Other
| Other | 2016 International Semiconductor Laser Conference, ISLC 2016 |
|---|---|
| Country | Japan |
| City | Kobe |
| Period | 16/9/12 → 16/9/15 |
Fingerprint
Keywords
- Distributed reflector laser
- DR laser
- Semiconductor laser
- Short cavity laser
- Silicon photonics
- Wafer bonding
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
Membrane distributed-reflector lasers with 20-μm-long DFB section and front/rear DBRs on Si substrates. / Kanno, Erina; Takeda, Koji; Fujii, Takuro; Hasebe, Koichi; Nishi, Hidetaka; Yamamoto, Tsuyoshi; Kakitsuka, Takaaki; Matsuo, Shinji.
2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7765712 (Conference Digest - IEEE International Semiconductor Laser Conference).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Membrane distributed-reflector lasers with 20-μm-long DFB section and front/rear DBRs on Si substrates
AU - Kanno, Erina
AU - Takeda, Koji
AU - Fujii, Takuro
AU - Hasebe, Koichi
AU - Nishi, Hidetaka
AU - Yamamoto, Tsuyoshi
AU - Kakitsuka, Takaaki
AU - Matsuo, Shinji
PY - 2016/12/2
Y1 - 2016/12/2
N2 - We have developed distributed reflector lasers that include a 20-μm-long DFB section on SiO 2 /Si substrates to reduce power consumption. By employing DBRs for both sides of the DFB section, we achieve a threshold current of 0.66 mA with a grating coupling coefficient of 900 cm -1 (DBR) and 820 cm -1 (DFB).
AB - We have developed distributed reflector lasers that include a 20-μm-long DFB section on SiO 2 /Si substrates to reduce power consumption. By employing DBRs for both sides of the DFB section, we achieve a threshold current of 0.66 mA with a grating coupling coefficient of 900 cm -1 (DBR) and 820 cm -1 (DFB).
KW - Distributed reflector laser
KW - DR laser
KW - Semiconductor laser
KW - Short cavity laser
KW - Silicon photonics
KW - Wafer bonding
UR - http://www.scopus.com/inward/record.url?scp=85014237808&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85014237808&partnerID=8YFLogxK
M3 - Conference contribution
T3 - Conference Digest - IEEE International Semiconductor Laser Conference
BT - 2016 International Semiconductor Laser Conference, ISLC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
ER -