Membrane III-V/Si DFB laser with width modulated silicon waveguide for narrowing linewDTH

Takuma Aihara; Tatsurou Hiraki; Takuro Fujii; Koji Takeda; Tai Tsuchizawa; Takaaki Kakitsuka; Shinji Matsuo

Membrane III-V/Si DFB laser with width modulated silicon waveguide for narrowing linewDTH

Takuma Aihara, Tatsurou Hiraki, Takuro Fujii, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate a membrane laser using an InP-based active region combined with a 220-nm-thick Si waveguide, where the Si waveguide width at the middle of the cavity is wider. The laser with a 500-µm long cavity exhibits a 3.3-mA threshold current and ~300-kHz Lorentzian linewidth.

Original language	English
Title of host publication	IET Conference Publications
Publisher	Institution of Engineering and Technology
Edition	CP765
ISBN (Electronic)	9781839530074, 9781839530661, 9781839530883, 9781839530890, 9781839531071, 9781839531088, 9781839531255, 9781839531705, 9781839531859
Publication status	Published - 2019
Externally published	Yes
Event	45th European Conference on Optical Communication, ECOC 2019 - Dublin, Ireland Duration: 2019 Sep 22 → 2019 Sep 26

Publication series

Name	IET Conference Publications
Number	CP765
Volume	2019

Conference

Conference	45th European Conference on Optical Communication, ECOC 2019
Country	Ireland
City	Dublin
Period	19/9/22 → 19/9/26

Keywords

Heterogeneous integration
Laser
Silicon photonics

ASJC Scopus subject areas

Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Membrane III-V/Si DFB laser with width modulated silicon waveguide for narrowing linewDTH'. Together they form a unique fingerprint.

Cite this

Membrane III-V/Si DFB laser with width modulated silicon waveguide for narrowing linewDTH. / Aihara, Takuma; Hiraki, Tatsurou; Fujii, Takuro; Takeda, Koji; Tsuchizawa, Tai; Kakitsuka, Takaaki; Matsuo, Shinji.

IET Conference Publications. CP765. ed. Institution of Engineering and Technology, 2019. (IET Conference Publications; Vol. 2019, No. CP765).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Aihara, T, Hiraki, T, Fujii, T, Takeda, K, Tsuchizawa, T, Kakitsuka, T & Matsuo, S 2019, Membrane III-V/Si DFB laser with width modulated silicon waveguide for narrowing linewDTH. in IET Conference Publications. CP765 edn, IET Conference Publications, no. CP765, vol. 2019, Institution of Engineering and Technology, 45th European Conference on Optical Communication, ECOC 2019, Dublin, Ireland, 19/9/22.

@inproceedings{e2dc80463aca45aa89e69feea28092ae,

title = "Membrane III-V/Si DFB laser with width modulated silicon waveguide for narrowing linewDTH",

abstract = "We demonstrate a membrane laser using an InP-based active region combined with a 220-nm-thick Si waveguide, where the Si waveguide width at the middle of the cavity is wider. The laser with a 500-µm long cavity exhibits a 3.3-mA threshold current and ~300-kHz Lorentzian linewidth.",

keywords = "Heterogeneous integration, Laser, Silicon photonics",

author = "Takuma Aihara and Tatsurou Hiraki and Takuro Fujii and Koji Takeda and Tai Tsuchizawa and Takaaki Kakitsuka and Shinji Matsuo",

year = "2019",

language = "English",

series = "IET Conference Publications",

publisher = "Institution of Engineering and Technology",

number = "CP765",

booktitle = "IET Conference Publications",

edition = "CP765",

note = "45th European Conference on Optical Communication, ECOC 2019 ; Conference date: 22-09-2019 Through 26-09-2019",

}

TY - GEN

T1 - Membrane III-V/Si DFB laser with width modulated silicon waveguide for narrowing linewDTH

AU - Aihara, Takuma

AU - Hiraki, Tatsurou

AU - Fujii, Takuro

AU - Takeda, Koji

AU - Tsuchizawa, Tai

AU - Kakitsuka, Takaaki

AU - Matsuo, Shinji

PY - 2019

Y1 - 2019

N2 - We demonstrate a membrane laser using an InP-based active region combined with a 220-nm-thick Si waveguide, where the Si waveguide width at the middle of the cavity is wider. The laser with a 500-µm long cavity exhibits a 3.3-mA threshold current and ~300-kHz Lorentzian linewidth.

AB - We demonstrate a membrane laser using an InP-based active region combined with a 220-nm-thick Si waveguide, where the Si waveguide width at the middle of the cavity is wider. The laser with a 500-µm long cavity exhibits a 3.3-mA threshold current and ~300-kHz Lorentzian linewidth.

KW - Heterogeneous integration

KW - Laser

KW - Silicon photonics

UR - http://www.scopus.com/inward/record.url?scp=85086905040&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85086905040&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85086905040

T3 - IET Conference Publications

BT - IET Conference Publications

PB - Institution of Engineering and Technology

T2 - 45th European Conference on Optical Communication, ECOC 2019

Y2 - 22 September 2019 through 26 September 2019

ER -