A high-efficiency InGaAsP Mach-Zehnder modulator is integrated with hydrogen-free deuterated silicon nitride (SiN:D) waveguide circuits on a Si substrate. A thin InP-based layer provides a high optical confinement factor of around 50% and enables easy optical coupling to the SiN:D waveguides, which are fabricated by a low-temperature backend process. The fabricated Mach-Zehnder modulator with a 300-μm-long phase shifter shows a VπL of 0.4 Vcm, insertion loss of ~4.5 dB, and an error-free operation for 40-Gbit/s non-return-to-zero signal.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics