Membrane InGaAsP Mach-Zehnder modulator with SiN:D waveguides on Si platform

Tatsurou Hiraki*, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

A high-efficiency InGaAsP Mach-Zehnder modulator is integrated with hydrogen-free deuterated silicon nitride (SiN:D) waveguide circuits on a Si substrate. A thin InP-based layer provides a high optical confinement factor of around 50% and enables easy optical coupling to the SiN:D waveguides, which are fabricated by a low-temperature backend process. The fabricated Mach-Zehnder modulator with a 300-μm-long phase shifter shows a VπL of 0.4 Vcm, insertion loss of ~4.5 dB, and an error-free operation for 40-Gbit/s non-return-to-zero signal.

Original languageEnglish
Pages (from-to)18612-18619
Number of pages8
JournalOptics Express
Volume27
Issue number13
DOIs
Publication statusPublished - 2019
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Fingerprint

Dive into the research topics of 'Membrane InGaAsP Mach-Zehnder modulator with SiN:D waveguides on Si platform'. Together they form a unique fingerprint.

Cite this