Membrane InGaAsP Mach-Zehnder modulator with SiN:D waveguides on Si platform

Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

Research output: Contribution to journalArticle

2 Citations (Scopus)


A high-efficiency InGaAsP Mach-Zehnder modulator is integrated with hydrogen-free deuterated silicon nitride (SiN:D) waveguide circuits on a Si substrate. A thin InP-based layer provides a high optical confinement factor of around 50% and enables easy optical coupling to the SiN:D waveguides, which are fabricated by a low-temperature backend process. The fabricated Mach-Zehnder modulator with a 300-μm-long phase shifter shows a VπL of 0.4 Vcm, insertion loss of ~4.5 dB, and an error-free operation for 40-Gbit/s non-return-to-zero signal.

Original languageEnglish
Pages (from-to)18612-18619
Number of pages8
JournalOptics Express
Issue number13
Publication statusPublished - 2019 Jan 1


ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Hiraki, T., Aihara, T., Takeda, K., Fujii, T., Kakitsuka, T., Tsuchizawa, T., Fukuda, H., & Matsuo, S. (2019). Membrane InGaAsP Mach-Zehnder modulator with SiN:D waveguides on Si platform. Optics Express, 27(13), 18612-18619.