Abstract
A high-efficiency InGaAsP Mach-Zehnder modulator is integrated with hydrogen-free deuterated silicon nitride (SiN:D) waveguide circuits on a Si substrate. A thin InP-based layer provides a high optical confinement factor of around 50% and enables easy optical coupling to the SiN:D waveguides, which are fabricated by a low-temperature backend process. The fabricated Mach-Zehnder modulator with a 300-μm-long phase shifter shows a VπL of 0.4 Vcm, insertion loss of ~4.5 dB, and an error-free operation for 40-Gbit/s non-return-to-zero signal.
| Original language | English |
|---|---|
| Pages (from-to) | 18612-18619 |
| Number of pages | 8 |
| Journal | Optics Express |
| Volume | 27 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 2019 Jan 1 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
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Hiraki, T., Aihara, T., Takeda, K., Fujii, T., Kakitsuka, T., Tsuchizawa, T., Fukuda, H., & Matsuo, S. (2019). Membrane InGaAsP Mach-Zehnder modulator with SiN:D waveguides on Si platform. Optics Express, 27(13), 18612-18619. https://doi.org/10.1364/OE.27.018612