Abstract
A high-efficiency InGaAsP Mach-Zehnder modulator is integrated with hydrogen-free deuterated silicon nitride (SiN:D) waveguide circuits on a Si substrate. A thin InP-based layer provides a high optical confinement factor of around 50% and enables easy optical coupling to the SiN:D waveguides, which are fabricated by a low-temperature backend process. The fabricated Mach-Zehnder modulator with a 300-μm-long phase shifter shows a VπL of 0.4 Vcm, insertion loss of ~4.5 dB, and an error-free operation for 40-Gbit/s non-return-to-zero signal.
| Original language | English |
|---|---|
| Pages (from-to) | 18612-18619 |
| Number of pages | 8 |
| Journal | Optics Express |
| Volume | 27 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 2019 Jan 1 |
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ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
Cite this
Membrane InGaAsP Mach-Zehnder modulator with SiN:D waveguides on Si platform. / Hiraki, Tatsurou; Aihara, Takuma; Takeda, Koji; Fujii, Takuro; Kakitsuka, Takaaki; Tsuchizawa, Tai; Fukuda, Hiroshi; Matsuo, Shinji.
In: Optics Express, Vol. 27, No. 13, 01.01.2019, p. 18612-18619.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Membrane InGaAsP Mach-Zehnder modulator with SiN:D waveguides on Si platform
AU - Hiraki, Tatsurou
AU - Aihara, Takuma
AU - Takeda, Koji
AU - Fujii, Takuro
AU - Kakitsuka, Takaaki
AU - Tsuchizawa, Tai
AU - Fukuda, Hiroshi
AU - Matsuo, Shinji
PY - 2019/1/1
Y1 - 2019/1/1
N2 - A high-efficiency InGaAsP Mach-Zehnder modulator is integrated with hydrogen-free deuterated silicon nitride (SiN:D) waveguide circuits on a Si substrate. A thin InP-based layer provides a high optical confinement factor of around 50% and enables easy optical coupling to the SiN:D waveguides, which are fabricated by a low-temperature backend process. The fabricated Mach-Zehnder modulator with a 300-μm-long phase shifter shows a VπL of 0.4 Vcm, insertion loss of ~4.5 dB, and an error-free operation for 40-Gbit/s non-return-to-zero signal.
AB - A high-efficiency InGaAsP Mach-Zehnder modulator is integrated with hydrogen-free deuterated silicon nitride (SiN:D) waveguide circuits on a Si substrate. A thin InP-based layer provides a high optical confinement factor of around 50% and enables easy optical coupling to the SiN:D waveguides, which are fabricated by a low-temperature backend process. The fabricated Mach-Zehnder modulator with a 300-μm-long phase shifter shows a VπL of 0.4 Vcm, insertion loss of ~4.5 dB, and an error-free operation for 40-Gbit/s non-return-to-zero signal.
UR - http://www.scopus.com/inward/record.url?scp=85068044218&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068044218&partnerID=8YFLogxK
U2 - 10.1364/OE.27.018612
DO - 10.1364/OE.27.018612
M3 - Article
AN - SCOPUS:85068044218
VL - 27
SP - 18612
EP - 18619
JO - Optics Express
JF - Optics Express
SN - 1094-4087
IS - 13
ER -