Abstract
A 512-kb memory has been developed featuring a one-transistor gain cell of size 7F2(F = 0.18 μm) on SOI. The cell named the floating body transistor cell (FBC) has the ability to achieve a 4F2 cell using self-aligned contact technologies and is proved to be scalable with respect to a cell signal. A basic operation was verified by device simulation and hardware measurement. An array driving method is disclosed which makes selective write possible. A cell signal sensing system consisting of a pair of reference cells written opposite data and comparing the combined current with the doubled cell current is shown to be robust against cell parameter variations in process and temperature. A random access time of 40 ns was simulated. Nondestructive readout and Cb/Cs free signal development drastically improve cell efficiency.
Original language | English |
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Pages (from-to) | 1510-1522 |
Number of pages | 13 |
Journal | IEEE Journal of Solid-State Circuits |
Volume | 37 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2002 Nov |
Externally published | Yes |
Keywords
- Capacitor-less DRAM
- DRAM
- Embedded memory
- Floating body transistor cell
- Gain cell
- Nondestructive readout
- Silicon-on-insulator technology
ASJC Scopus subject areas
- Electrical and Electronic Engineering