Memory effect of diamond in-plane-gated field-effect transistors

Yu Sumikawa, Tokishige Banno, Kensaku Kobayashi, Yutaka Itoh, Hitoshi Umezawa, Hiroshi Kawarada

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The analysis of memory effect of diamond in-plane-gated field effect transistors (IPGFETs) was carried out. This was observed in hydrogen terminated and oxygen terminated diamond surfaces. The hysteresis characteristics were observed under the light irradiation at room temperature in the diamond IPGFETs. It was concluded that the carrier trap sites on the insulating part of IPGFETs caused the hysteresis characteristics.

Original languageEnglish
Pages (from-to)139-141
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number1
DOIs
Publication statusPublished - 2004 Jul 5
Externally publishedYes

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field effect transistors
diamonds
hysteresis
traps
irradiation
room temperature
oxygen
hydrogen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Memory effect of diamond in-plane-gated field-effect transistors. / Sumikawa, Yu; Banno, Tokishige; Kobayashi, Kensaku; Itoh, Yutaka; Umezawa, Hitoshi; Kawarada, Hiroshi.

In: Applied Physics Letters, Vol. 85, No. 1, 05.07.2004, p. 139-141.

Research output: Contribution to journalArticle

Sumikawa, Y, Banno, T, Kobayashi, K, Itoh, Y, Umezawa, H & Kawarada, H 2004, 'Memory effect of diamond in-plane-gated field-effect transistors', Applied Physics Letters, vol. 85, no. 1, pp. 139-141. https://doi.org/10.1063/1.1767272
Sumikawa, Yu ; Banno, Tokishige ; Kobayashi, Kensaku ; Itoh, Yutaka ; Umezawa, Hitoshi ; Kawarada, Hiroshi. / Memory effect of diamond in-plane-gated field-effect transistors. In: Applied Physics Letters. 2004 ; Vol. 85, No. 1. pp. 139-141.
@article{865af2ecab3f4b49865388c1cd3cffc5,
title = "Memory effect of diamond in-plane-gated field-effect transistors",
abstract = "The analysis of memory effect of diamond in-plane-gated field effect transistors (IPGFETs) was carried out. This was observed in hydrogen terminated and oxygen terminated diamond surfaces. The hysteresis characteristics were observed under the light irradiation at room temperature in the diamond IPGFETs. It was concluded that the carrier trap sites on the insulating part of IPGFETs caused the hysteresis characteristics.",
author = "Yu Sumikawa and Tokishige Banno and Kensaku Kobayashi and Yutaka Itoh and Hitoshi Umezawa and Hiroshi Kawarada",
year = "2004",
month = "7",
day = "5",
doi = "10.1063/1.1767272",
language = "English",
volume = "85",
pages = "139--141",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - Memory effect of diamond in-plane-gated field-effect transistors

AU - Sumikawa, Yu

AU - Banno, Tokishige

AU - Kobayashi, Kensaku

AU - Itoh, Yutaka

AU - Umezawa, Hitoshi

AU - Kawarada, Hiroshi

PY - 2004/7/5

Y1 - 2004/7/5

N2 - The analysis of memory effect of diamond in-plane-gated field effect transistors (IPGFETs) was carried out. This was observed in hydrogen terminated and oxygen terminated diamond surfaces. The hysteresis characteristics were observed under the light irradiation at room temperature in the diamond IPGFETs. It was concluded that the carrier trap sites on the insulating part of IPGFETs caused the hysteresis characteristics.

AB - The analysis of memory effect of diamond in-plane-gated field effect transistors (IPGFETs) was carried out. This was observed in hydrogen terminated and oxygen terminated diamond surfaces. The hysteresis characteristics were observed under the light irradiation at room temperature in the diamond IPGFETs. It was concluded that the carrier trap sites on the insulating part of IPGFETs caused the hysteresis characteristics.

UR - http://www.scopus.com/inward/record.url?scp=3242686307&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3242686307&partnerID=8YFLogxK

U2 - 10.1063/1.1767272

DO - 10.1063/1.1767272

M3 - Article

AN - SCOPUS:3242686307

VL - 85

SP - 139

EP - 141

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

ER -