The analysis of memory effect of diamond in-plane-gated field effect transistors (IPGFETs) was carried out. This was observed in hydrogen terminated and oxygen terminated diamond surfaces. The hysteresis characteristics were observed under the light irradiation at room temperature in the diamond IPGFETs. It was concluded that the carrier trap sites on the insulating part of IPGFETs caused the hysteresis characteristics.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)