Memristive operations demonstrated by gap-type atomic switches

Tsuyoshi Hasegawa, Alpana Nayak, Takeo Ohno, Kazuya Terabe, Tohru Tsuruoka, James K. Gimzewski, Masakazu Aono

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

We demonstrate memristive operations using gap-type Ag2S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.

Original languageEnglish
Pages (from-to)811-815
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume102
Issue number4
DOIs
Publication statusPublished - 2011 Mar 1

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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