Memristive operations demonstrated by gap-type atomic switches

Tsuyoshi Hasegawa, Alpana Nayak, Takeo Ohno, Kazuya Terabe, Tohru Tsuruoka, James K. Gimzewski, Masakazu Aono

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

We demonstrate memristive operations using gap-type Ag2S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.

Original languageEnglish
Pages (from-to)811-815
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume102
Issue number4
DOIs
Publication statusPublished - 2011 Mar
Externally publishedYes

Fingerprint

Switches
Oxides
Brain
Metals
Data storage equipment

ASJC Scopus subject areas

  • Materials Science(all)
  • Chemistry(all)

Cite this

Memristive operations demonstrated by gap-type atomic switches. / Hasegawa, Tsuyoshi; Nayak, Alpana; Ohno, Takeo; Terabe, Kazuya; Tsuruoka, Tohru; Gimzewski, James K.; Aono, Masakazu.

In: Applied Physics A: Materials Science and Processing, Vol. 102, No. 4, 03.2011, p. 811-815.

Research output: Contribution to journalArticle

Hasegawa, T, Nayak, A, Ohno, T, Terabe, K, Tsuruoka, T, Gimzewski, JK & Aono, M 2011, 'Memristive operations demonstrated by gap-type atomic switches', Applied Physics A: Materials Science and Processing, vol. 102, no. 4, pp. 811-815. https://doi.org/10.1007/s00339-011-6317-0
Hasegawa, Tsuyoshi ; Nayak, Alpana ; Ohno, Takeo ; Terabe, Kazuya ; Tsuruoka, Tohru ; Gimzewski, James K. ; Aono, Masakazu. / Memristive operations demonstrated by gap-type atomic switches. In: Applied Physics A: Materials Science and Processing. 2011 ; Vol. 102, No. 4. pp. 811-815.
@article{91514018a9b54509914774d89bdfd655,
title = "Memristive operations demonstrated by gap-type atomic switches",
abstract = "We demonstrate memristive operations using gap-type Ag2S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.",
author = "Tsuyoshi Hasegawa and Alpana Nayak and Takeo Ohno and Kazuya Terabe and Tohru Tsuruoka and Gimzewski, {James K.} and Masakazu Aono",
year = "2011",
month = "3",
doi = "10.1007/s00339-011-6317-0",
language = "English",
volume = "102",
pages = "811--815",
journal = "Applied Physics",
issn = "0340-3793",
publisher = "Springer Heidelberg",
number = "4",

}

TY - JOUR

T1 - Memristive operations demonstrated by gap-type atomic switches

AU - Hasegawa, Tsuyoshi

AU - Nayak, Alpana

AU - Ohno, Takeo

AU - Terabe, Kazuya

AU - Tsuruoka, Tohru

AU - Gimzewski, James K.

AU - Aono, Masakazu

PY - 2011/3

Y1 - 2011/3

N2 - We demonstrate memristive operations using gap-type Ag2S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.

AB - We demonstrate memristive operations using gap-type Ag2S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.

UR - http://www.scopus.com/inward/record.url?scp=79959346865&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959346865&partnerID=8YFLogxK

U2 - 10.1007/s00339-011-6317-0

DO - 10.1007/s00339-011-6317-0

M3 - Article

AN - SCOPUS:79959346865

VL - 102

SP - 811

EP - 815

JO - Applied Physics

JF - Applied Physics

SN - 0340-3793

IS - 4

ER -