Memristive operations demonstrated by gap-type atomic switches

Tsuyoshi Hasegawa; Alpana Nayak; Takeo Ohno; Kazuya Terabe; Tohru Tsuruoka; James K. Gimzewski; Masakazu Aono

doi:10.1007/s00339-011-6317-0

Memristive operations demonstrated by gap-type atomic switches

Tsuyoshi Hasegawa, Alpana Nayak, Takeo Ohno, Kazuya Terabe, Tohru Tsuruoka, James K. Gimzewski, Masakazu Aono

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

We demonstrate memristive operations using gap-type Ag₂S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.

Original language	English
Pages (from-to)	811-815
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	102
Issue number	4
DOIs	https://doi.org/10.1007/s00339-011-6317-0
Publication status	Published - 2011 Mar 1
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

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AU - Hasegawa, Tsuyoshi

AU - Nayak, Alpana

AU - Ohno, Takeo

AU - Terabe, Kazuya

AU - Tsuruoka, Tohru

AU - Gimzewski, James K.

AU - Aono, Masakazu

PY - 2011/3/1

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N2 - We demonstrate memristive operations using gap-type Ag2S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.

AB - We demonstrate memristive operations using gap-type Ag2S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.

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Memristive operations demonstrated by gap-type atomic switches

Abstract

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