TY - JOUR
T1 - Memristive operations demonstrated by gap-type atomic switches
AU - Hasegawa, Tsuyoshi
AU - Nayak, Alpana
AU - Ohno, Takeo
AU - Terabe, Kazuya
AU - Tsuruoka, Tohru
AU - Gimzewski, James K.
AU - Aono, Masakazu
PY - 2011/3/1
Y1 - 2011/3/1
N2 - We demonstrate memristive operations using gap-type Ag2S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.
AB - We demonstrate memristive operations using gap-type Ag2S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.
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U2 - 10.1007/s00339-011-6317-0
DO - 10.1007/s00339-011-6317-0
M3 - Article
AN - SCOPUS:79959346865
VL - 102
SP - 811
EP - 815
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 4
ER -