Memristive operations demonstrated by gap-type atomic switches

Tsuyoshi Hasegawa; Alpana Nayak; Takeo Ohno; Kazuya Terabe; Tohru Tsuruoka; James K. Gimzewski; Masakazu Aono

doi:10.1007/s00339-011-6317-0

Memristive operations demonstrated by gap-type atomic switches

Tsuyoshi Hasegawa, Alpana Nayak, Takeo Ohno, Kazuya Terabe, Tohru Tsuruoka, James K. Gimzewski, Masakazu Aono

School of Advanced Science and Engineering

Research output: Contribution to journal › Article

33 Citations (Scopus)

Abstract

We demonstrate memristive operations using gap-type Ag₂S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.

Original language	English
Pages (from-to)	811-815
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	102
Issue number	4
DOIs	https://doi.org/10.1007/s00339-011-6317-0
Publication status	Published - 2011 Mar 1

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

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Hasegawa, T., Nayak, A., Ohno, T., Terabe, K., Tsuruoka, T., Gimzewski, J. K., & Aono, M. (2011). Memristive operations demonstrated by gap-type atomic switches. Applied Physics A: Materials Science and Processing, 102(4), 811-815. https://doi.org/10.1007/s00339-011-6317-0

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AU - Gimzewski, James K.

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