Abstract
We demonstrate memristive operations using gap-type Ag2S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.
| Original language | English |
|---|---|
| Pages (from-to) | 811-815 |
| Number of pages | 5 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 102 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2011 Mar |
| Externally published | Yes |
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ASJC Scopus subject areas
- Materials Science(all)
- Chemistry(all)
Cite this
Memristive operations demonstrated by gap-type atomic switches. / Hasegawa, Tsuyoshi; Nayak, Alpana; Ohno, Takeo; Terabe, Kazuya; Tsuruoka, Tohru; Gimzewski, James K.; Aono, Masakazu.
In: Applied Physics A: Materials Science and Processing, Vol. 102, No. 4, 03.2011, p. 811-815.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Memristive operations demonstrated by gap-type atomic switches
AU - Hasegawa, Tsuyoshi
AU - Nayak, Alpana
AU - Ohno, Takeo
AU - Terabe, Kazuya
AU - Tsuruoka, Tohru
AU - Gimzewski, James K.
AU - Aono, Masakazu
PY - 2011/3
Y1 - 2011/3
N2 - We demonstrate memristive operations using gap-type Ag2S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.
AB - We demonstrate memristive operations using gap-type Ag2S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.
UR - http://www.scopus.com/inward/record.url?scp=79959346865&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79959346865&partnerID=8YFLogxK
U2 - 10.1007/s00339-011-6317-0
DO - 10.1007/s00339-011-6317-0
M3 - Article
AN - SCOPUS:79959346865
VL - 102
SP - 811
EP - 815
JO - Applied Physics
JF - Applied Physics
SN - 0340-3793
IS - 4
ER -