MESFETs and MOSFETs on hydrogen-terminated diamond surfaces

K. Tsugawa, A. Hokazono, H. Noda, K. Kitatani, K. Morita, H. Kawarada

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

High-performance MESFETs and MOSFETs have been fabricated on hydrogen-terminated surfaces of homoepitaxial diamond films prepared by chemical vapor deposition (CVD). Both enhancement and depletion-mode MESFETs have been obtained with the best transconductances of 10mS/ mm in enhancement mode and 12mS/mm in depletion mode. Depletion-mode MOSFETs have been also realized with the best transcenductance of 16mS/mm utilizing evaporated SiOx as gate insulator. The dc performance of the devices using the hydrogen-terminated diamond surfaces has been evalu-ated by two-dimensional drift-diffusion device simulations using several models of surface channels on the hydrogen-terminated surfaces. Consequently, a realistic surface-channel model has been obtained. Based on the model, the simulations for self-aligned-1μm-gate devices have been also carried out to predict the operation of smaller diamond devices not realized in diamond at present. Their transconductances exceed 100mS/mm.

Original languageEnglish
Pages (from-to)977-980
Number of pages4
JournalMaterials Science Forum
Volume264-268
Issue numberPART 2
DOIs
Publication statusPublished - 1998 Jan 1

Keywords

  • Hydrogen-Terminated Diamond Surface
  • MESFET
  • MOSFET
  • Surface Channel
  • Surface Semiconductive Layer

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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