MESFETs and MOSFETs on hydrogen-terminated diamond surfaces

K. Tsugawa, A. Hokazono, H. Noda, K. Kitatani, K. Morita, Hiroshi Kawarada

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    Abstract

    High-performance MESFETs and MOSFETs have been fabricated on hydrogen-terminated surfaces of homoepitaxial diamond films prepared by chemical vapor deposition (CVD). Both enhancement and depletion-mode MESFETs have been obtained with the best transconductances of 10mS/ mm in enhancement mode and 12mS/mm in depletion mode. Depletion-mode MOSFETs have been also realized with the best transcenductance of 16mS/mm utilizing evaporated SiOx as gate insulator. The dc performance of the devices using the hydrogen-terminated diamond surfaces has been evalu-ated by two-dimensional drift-diffusion device simulations using several models of surface channels on the hydrogen-terminated surfaces. Consequently, a realistic surface-channel model has been obtained. Based on the model, the simulations for self-aligned-1μm-gate devices have been also carried out to predict the operation of smaller diamond devices not realized in diamond at present. Their transconductances exceed 100mS/mm.

    Original languageEnglish
    Pages (from-to)977-980
    Number of pages4
    JournalMaterials Science Forum
    Volume264-268
    Issue numberPART 2
    Publication statusPublished - 1998

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    Keywords

    • Hydrogen-Terminated Diamond Surface
    • MESFET
    • MOSFET
    • Surface Channel
    • Surface Semiconductive Layer

    ASJC Scopus subject areas

    • Materials Science(all)

    Cite this

    Tsugawa, K., Hokazono, A., Noda, H., Kitatani, K., Morita, K., & Kawarada, H. (1998). MESFETs and MOSFETs on hydrogen-terminated diamond surfaces. Materials Science Forum, 264-268(PART 2), 977-980.