METAL-INSULATOR-SEMICONDUCTOR (MIS) DEVICE USING A FERROELECTRIC POLYMER THIN FILM IN THE GATE INSULATOR.

Research output: Chapter in Book/Report/Conference proceedingChapter

61 Citations (Scopus)

Abstract

A nonvolatile MIS memory device using a ferroelectric polymer thin film in the gate insulator is proposed. In the gate electrode of the device, a ferroelectric polymer thin film is sandwiched between two insulator films to prevent carrier injection into the polymer thin film. Al-SiO//2-P (VDF/TrFE)-SiO//2-Si capacitors were fabricated to evaluate the basic characteristics of the device by C-V measurement, and ferroelectric polarization reversal was observed in the capacitors. Based on the C-V measurements, MIS transistors were fabricated using a process which virtually self-aligns the effective gate area to the source/drain. It was shown that the MIS transistor could be electrically programmed and erased. The on/off ratio of the transistor was greater than 10**6.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Pages590-594
Number of pages5
Volume25
Edition4
Publication statusPublished - 1986 Apr
Externally publishedYes

Fingerprint

Semiconductor devices
Polymer films
Ferroelectric materials
Transistors
Semiconductor materials
Thin films
Capacitors
Metals
Polarization
Data storage equipment
Electrodes

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yamauchi, N. (1986). METAL-INSULATOR-SEMICONDUCTOR (MIS) DEVICE USING A FERROELECTRIC POLYMER THIN FILM IN THE GATE INSULATOR. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes (4 ed., Vol. 25, pp. 590-594)

METAL-INSULATOR-SEMICONDUCTOR (MIS) DEVICE USING A FERROELECTRIC POLYMER THIN FILM IN THE GATE INSULATOR. / Yamauchi, Noriyoshi.

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. Vol. 25 4. ed. 1986. p. 590-594.

Research output: Chapter in Book/Report/Conference proceedingChapter

Yamauchi, N 1986, METAL-INSULATOR-SEMICONDUCTOR (MIS) DEVICE USING A FERROELECTRIC POLYMER THIN FILM IN THE GATE INSULATOR. in Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 4 edn, vol. 25, pp. 590-594.
Yamauchi N. METAL-INSULATOR-SEMICONDUCTOR (MIS) DEVICE USING A FERROELECTRIC POLYMER THIN FILM IN THE GATE INSULATOR. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 4 ed. Vol. 25. 1986. p. 590-594
Yamauchi, Noriyoshi. / METAL-INSULATOR-SEMICONDUCTOR (MIS) DEVICE USING A FERROELECTRIC POLYMER THIN FILM IN THE GATE INSULATOR. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. Vol. 25 4. ed. 1986. pp. 590-594
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