Metallic bismuth on strontium-bismuth tantalate thin films for ferroelectric memory application

Katsuhiko Asami, Tetsuya Osaka, Tomomi Yamanobe, Ichiro Koiwa

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Strontium-bismuth tantalate (SBT) has been actively investigated as an attractive candidate for non-volatile ferroelectric random access memories because of its high resistance to fatigue. However, the ferroelectric property of SBT is easily affected by fabrication process parameters. The relationship between the surface chemistry of SBT thin films and the fabrication process parameters, such as crystallization temperature, upper Pt electrode, annealing in oxygen after Pt electrode fabrication (= the second annealing), hydrogen sintering and ion etching, were examined mainly by XPS analysis. In all specimens, metallic Bi, which is one of the main causes for deterioration of their performances, was observed in addition to oxidic Bi, Sr and Ta. The deposition of an upper Pt electrode resulted exclusively in an increase in metallic Bi content. Sintering in a hydrogen atmosphere and ion etching increased the ratio of metallic Bi to total Bi. The second annealing was effective in suppressing the metallic Bi content.

Original languageEnglish
Pages (from-to)391-395
Number of pages5
JournalSurface and Interface Analysis
Volume30
Issue number1
DOIs
Publication statusPublished - 2000 Aug

Fingerprint

Bismuth
Strontium
strontium
bismuth
Ferroelectric materials
Annealing
Data storage equipment
Fabrication
Thin films
Electrodes
fabrication
annealing
electrodes
Etching
sintering
Sintering
thin films
etching
Hydrogen
random access memory

ASJC Scopus subject areas

  • Colloid and Surface Chemistry
  • Physical and Theoretical Chemistry

Cite this

Metallic bismuth on strontium-bismuth tantalate thin films for ferroelectric memory application. / Asami, Katsuhiko; Osaka, Tetsuya; Yamanobe, Tomomi; Koiwa, Ichiro.

In: Surface and Interface Analysis, Vol. 30, No. 1, 08.2000, p. 391-395.

Research output: Contribution to journalArticle

Asami, Katsuhiko ; Osaka, Tetsuya ; Yamanobe, Tomomi ; Koiwa, Ichiro. / Metallic bismuth on strontium-bismuth tantalate thin films for ferroelectric memory application. In: Surface and Interface Analysis. 2000 ; Vol. 30, No. 1. pp. 391-395.
@article{9ad7dfb0ed4d472996a371e5959f6092,
title = "Metallic bismuth on strontium-bismuth tantalate thin films for ferroelectric memory application",
abstract = "Strontium-bismuth tantalate (SBT) has been actively investigated as an attractive candidate for non-volatile ferroelectric random access memories because of its high resistance to fatigue. However, the ferroelectric property of SBT is easily affected by fabrication process parameters. The relationship between the surface chemistry of SBT thin films and the fabrication process parameters, such as crystallization temperature, upper Pt electrode, annealing in oxygen after Pt electrode fabrication (= the second annealing), hydrogen sintering and ion etching, were examined mainly by XPS analysis. In all specimens, metallic Bi, which is one of the main causes for deterioration of their performances, was observed in addition to oxidic Bi, Sr and Ta. The deposition of an upper Pt electrode resulted exclusively in an increase in metallic Bi content. Sintering in a hydrogen atmosphere and ion etching increased the ratio of metallic Bi to total Bi. The second annealing was effective in suppressing the metallic Bi content.",
author = "Katsuhiko Asami and Tetsuya Osaka and Tomomi Yamanobe and Ichiro Koiwa",
year = "2000",
month = "8",
doi = "10.1002/1096-9918(200008)30:1<391::AID-SIA742>3.0.CO;2-N",
language = "English",
volume = "30",
pages = "391--395",
journal = "Surface and Interface Analysis",
issn = "0142-2421",
publisher = "John Wiley and Sons Ltd",
number = "1",

}

TY - JOUR

T1 - Metallic bismuth on strontium-bismuth tantalate thin films for ferroelectric memory application

AU - Asami, Katsuhiko

AU - Osaka, Tetsuya

AU - Yamanobe, Tomomi

AU - Koiwa, Ichiro

PY - 2000/8

Y1 - 2000/8

N2 - Strontium-bismuth tantalate (SBT) has been actively investigated as an attractive candidate for non-volatile ferroelectric random access memories because of its high resistance to fatigue. However, the ferroelectric property of SBT is easily affected by fabrication process parameters. The relationship between the surface chemistry of SBT thin films and the fabrication process parameters, such as crystallization temperature, upper Pt electrode, annealing in oxygen after Pt electrode fabrication (= the second annealing), hydrogen sintering and ion etching, were examined mainly by XPS analysis. In all specimens, metallic Bi, which is one of the main causes for deterioration of their performances, was observed in addition to oxidic Bi, Sr and Ta. The deposition of an upper Pt electrode resulted exclusively in an increase in metallic Bi content. Sintering in a hydrogen atmosphere and ion etching increased the ratio of metallic Bi to total Bi. The second annealing was effective in suppressing the metallic Bi content.

AB - Strontium-bismuth tantalate (SBT) has been actively investigated as an attractive candidate for non-volatile ferroelectric random access memories because of its high resistance to fatigue. However, the ferroelectric property of SBT is easily affected by fabrication process parameters. The relationship between the surface chemistry of SBT thin films and the fabrication process parameters, such as crystallization temperature, upper Pt electrode, annealing in oxygen after Pt electrode fabrication (= the second annealing), hydrogen sintering and ion etching, were examined mainly by XPS analysis. In all specimens, metallic Bi, which is one of the main causes for deterioration of their performances, was observed in addition to oxidic Bi, Sr and Ta. The deposition of an upper Pt electrode resulted exclusively in an increase in metallic Bi content. Sintering in a hydrogen atmosphere and ion etching increased the ratio of metallic Bi to total Bi. The second annealing was effective in suppressing the metallic Bi content.

UR - http://www.scopus.com/inward/record.url?scp=0034245110&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034245110&partnerID=8YFLogxK

U2 - 10.1002/1096-9918(200008)30:1<391::AID-SIA742>3.0.CO;2-N

DO - 10.1002/1096-9918(200008)30:1<391::AID-SIA742>3.0.CO;2-N

M3 - Article

VL - 30

SP - 391

EP - 395

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

SN - 0142-2421

IS - 1

ER -