Abstract
Device quality InAs/InGaAs multiple quantum well (MQW) structures were grown on InP substrates by metalorganic vapor phase epitaxy (MOVPE) and applied to lasers emitting at wavelengths longer than 2 μm. InAs/InGaAs MQWs with flat interfaces were obtained by adjusting the growth temperature between 460°C and 510°C. The photoluminescence peak wavelength of the MQWs increases from 1.93 to 2.47 μm as the thickness of InAs quantum wells increases from 2 to 7 nm. The structural and optical properties remained almost unchanged even after annealing at 620°C. For 40-μm-wide stripe broad-area lasers with 5-nm-thick InAs quantum wells, a lasing wavelength longer than 2.3 μm and an output power higher than 10 mW were achieved under continuous-wave operation at a temperature of 25°C. These results indicate that InAs/InGaAs MQW structures grown by MOVPE are very useful for the active region of 2 μm wavelength lasers.
| Original language | English |
|---|---|
| Pages (from-to) | 992-997 |
| Number of pages | 6 |
| Journal | IEEE Journal on Selected Topics in Quantum Electronics |
| Volume | 14 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2008 Jul 1 |
| Externally published | Yes |
Keywords
- InAs quantum well
- Metalorganic vapor phase epitaxy (MOVPE)
- Mid-infrared lasers
- Quantum well lasers
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering