Metalorganic vapor phase epitaxial growth of InAs/InGaAs multiple quantum well structures on InP substrates

Tomonari Sato*, Manabu Mitsuhara, Takaaki Kakitsuka, Takeshi Fujisawa, Yasuhiro Kondo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)


Device quality InAs/InGaAs multiple quantum well (MQW) structures were grown on InP substrates by metalorganic vapor phase epitaxy (MOVPE) and applied to lasers emitting at wavelengths longer than 2 μm. InAs/InGaAs MQWs with flat interfaces were obtained by adjusting the growth temperature between 460°C and 510°C. The photoluminescence peak wavelength of the MQWs increases from 1.93 to 2.47 μm as the thickness of InAs quantum wells increases from 2 to 7 nm. The structural and optical properties remained almost unchanged even after annealing at 620°C. For 40-μm-wide stripe broad-area lasers with 5-nm-thick InAs quantum wells, a lasing wavelength longer than 2.3 μm and an output power higher than 10 mW were achieved under continuous-wave operation at a temperature of 25°C. These results indicate that InAs/InGaAs MQW structures grown by MOVPE are very useful for the active region of 2 μm wavelength lasers.

Original languageEnglish
Pages (from-to)992-997
Number of pages6
JournalIEEE Journal on Selected Topics in Quantum Electronics
Issue number4
Publication statusPublished - 2008 Jul
Externally publishedYes


  • InAs quantum well
  • Metalorganic vapor phase epitaxy (MOVPE)
  • Mid-infrared lasers
  • Quantum well lasers

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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