Abstract
Device quality InAs/InGaAs multiple quantum well (MQW) structures were grown on InP substrates by metalorganic vapor phase epitaxy (MOVPE) and applied to lasers emitting at wavelengths longer than 2 μm. InAs/InGaAs MQWs with flat interfaces were obtained by adjusting the growth temperature between 460°C and 510°C. The photoluminescence peak wavelength of the MQWs increases from 1.93 to 2.47 μm as the thickness of InAs quantum wells increases from 2 to 7 nm. The structural and optical properties remained almost unchanged even after annealing at 620°C. For 40-μm-wide stripe broad-area lasers with 5-nm-thick InAs quantum wells, a lasing wavelength longer than 2.3 μm and an output power higher than 10 mW were achieved under continuous-wave operation at a temperature of 25°C. These results indicate that InAs/InGaAs MQW structures grown by MOVPE are very useful for the active region of 2 μm wavelength lasers.
| Original language | English |
|---|---|
| Pages (from-to) | 992-997 |
| Number of pages | 6 |
| Journal | IEEE Journal on Selected Topics in Quantum Electronics |
| Volume | 14 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2008 Jul 1 |
| Externally published | Yes |
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Keywords
- InAs quantum well
- Metalorganic vapor phase epitaxy (MOVPE)
- Mid-infrared lasers
- Quantum well lasers
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
Metalorganic vapor phase epitaxial growth of InAs/InGaAs multiple quantum well structures on InP substrates. / Sato, Tomonari; Mitsuhara, Manabu; Kakitsuka, Takaaki; Fujisawa, Takeshi; Kondo, Yasuhiro.
In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 14, No. 4, 01.07.2008, p. 992-997.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Metalorganic vapor phase epitaxial growth of InAs/InGaAs multiple quantum well structures on InP substrates
AU - Sato, Tomonari
AU - Mitsuhara, Manabu
AU - Kakitsuka, Takaaki
AU - Fujisawa, Takeshi
AU - Kondo, Yasuhiro
PY - 2008/7/1
Y1 - 2008/7/1
N2 - Device quality InAs/InGaAs multiple quantum well (MQW) structures were grown on InP substrates by metalorganic vapor phase epitaxy (MOVPE) and applied to lasers emitting at wavelengths longer than 2 μm. InAs/InGaAs MQWs with flat interfaces were obtained by adjusting the growth temperature between 460°C and 510°C. The photoluminescence peak wavelength of the MQWs increases from 1.93 to 2.47 μm as the thickness of InAs quantum wells increases from 2 to 7 nm. The structural and optical properties remained almost unchanged even after annealing at 620°C. For 40-μm-wide stripe broad-area lasers with 5-nm-thick InAs quantum wells, a lasing wavelength longer than 2.3 μm and an output power higher than 10 mW were achieved under continuous-wave operation at a temperature of 25°C. These results indicate that InAs/InGaAs MQW structures grown by MOVPE are very useful for the active region of 2 μm wavelength lasers.
AB - Device quality InAs/InGaAs multiple quantum well (MQW) structures were grown on InP substrates by metalorganic vapor phase epitaxy (MOVPE) and applied to lasers emitting at wavelengths longer than 2 μm. InAs/InGaAs MQWs with flat interfaces were obtained by adjusting the growth temperature between 460°C and 510°C. The photoluminescence peak wavelength of the MQWs increases from 1.93 to 2.47 μm as the thickness of InAs quantum wells increases from 2 to 7 nm. The structural and optical properties remained almost unchanged even after annealing at 620°C. For 40-μm-wide stripe broad-area lasers with 5-nm-thick InAs quantum wells, a lasing wavelength longer than 2.3 μm and an output power higher than 10 mW were achieved under continuous-wave operation at a temperature of 25°C. These results indicate that InAs/InGaAs MQW structures grown by MOVPE are very useful for the active region of 2 μm wavelength lasers.
KW - InAs quantum well
KW - Metalorganic vapor phase epitaxy (MOVPE)
KW - Mid-infrared lasers
KW - Quantum well lasers
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UR - http://www.scopus.com/inward/citedby.url?scp=48949100131&partnerID=8YFLogxK
U2 - 10.1109/JSTQE.2008.918106
DO - 10.1109/JSTQE.2008.918106
M3 - Article
VL - 14
SP - 992
EP - 997
JO - IEEE Journal of Selected Topics in Quantum Electronics
JF - IEEE Journal of Selected Topics in Quantum Electronics
SN - 1077-260X
IS - 4
ER -