Metalorganic vapor phase epitaxial growth of InAs/InGaAs multiple quantum well structures on InP substrates

Tomonari Sato, Manabu Mitsuhara, Takaaki Kakitsuka, Takeshi Fujisawa, Yasuhiro Kondo

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Device quality InAs/InGaAs multiple quantum well (MQW) structures were grown on InP substrates by metalorganic vapor phase epitaxy (MOVPE) and applied to lasers emitting at wavelengths longer than 2 μm. InAs/InGaAs MQWs with flat interfaces were obtained by adjusting the growth temperature between 460°C and 510°C. The photoluminescence peak wavelength of the MQWs increases from 1.93 to 2.47 μm as the thickness of InAs quantum wells increases from 2 to 7 nm. The structural and optical properties remained almost unchanged even after annealing at 620°C. For 40-μm-wide stripe broad-area lasers with 5-nm-thick InAs quantum wells, a lasing wavelength longer than 2.3 μm and an output power higher than 10 mW were achieved under continuous-wave operation at a temperature of 25°C. These results indicate that InAs/InGaAs MQW structures grown by MOVPE are very useful for the active region of 2 μm wavelength lasers.

Original languageEnglish
Pages (from-to)992-997
Number of pages6
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume14
Issue number4
DOIs
Publication statusPublished - 2008 Jul 1
Externally publishedYes

Fingerprint

Vapor phase epitaxy
Semiconductor quantum wells
quantum wells
vapor phases
Wavelength
Metallorganic vapor phase epitaxy
Substrates
vapor phase epitaxy
wavelengths
Lasers
lasers
Growth temperature
continuous radiation
lasing
Structural properties
Photoluminescence
Optical properties
adjusting
Annealing
photoluminescence

Keywords

  • InAs quantum well
  • Metalorganic vapor phase epitaxy (MOVPE)
  • Mid-infrared lasers
  • Quantum well lasers

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Metalorganic vapor phase epitaxial growth of InAs/InGaAs multiple quantum well structures on InP substrates. / Sato, Tomonari; Mitsuhara, Manabu; Kakitsuka, Takaaki; Fujisawa, Takeshi; Kondo, Yasuhiro.

In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 14, No. 4, 01.07.2008, p. 992-997.

Research output: Contribution to journalArticle

Sato, Tomonari ; Mitsuhara, Manabu ; Kakitsuka, Takaaki ; Fujisawa, Takeshi ; Kondo, Yasuhiro. / Metalorganic vapor phase epitaxial growth of InAs/InGaAs multiple quantum well structures on InP substrates. In: IEEE Journal on Selected Topics in Quantum Electronics. 2008 ; Vol. 14, No. 4. pp. 992-997.
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