TY - JOUR
T1 - Metalorganic vapor phase epitaxy growth of InGaAsP multi quantum well laser diodes using entirely organic sources
AU - Horita, M.
AU - Tsurusawa, M.
AU - Utaka, K.
AU - Matsushima, Y.
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1994/12/2
Y1 - 1994/12/2
N2 - Metalorganic vapor phase epitaxy (MOVPE) of InGaAsP multiple quantum well (MQW) lasers was performed by using entirely organic compounds as precursors. Tertiarybutylarsine (TBAs), tertiarybutylphosphine (TBP) and organic doping sources were used. The quality of the hetero-interfaces was investigated by means of photoluminescence (PL) and transmission electron microscopy (TEM). The difference between the cases using TBP and PH3 was described, focusing on the waiting time dependence of the hetero-interface quality. The PL FWHM measured at 4.2 K was as small as 6.1 meV with optimized growth conditions, and the TEM images also proved excellent hetero-interfaces of the MQW structure grown with TBAs and TBP. InGaAs/InGaAsP separate confinement heterostructure 3 QW lasers grown by entire organic source MOVPE (EOS-MOVPE) had a threshold current density of 710 A/cm2, an internal loss of 15 cm-1 and an internal quantum efficiency of 70%.
AB - Metalorganic vapor phase epitaxy (MOVPE) of InGaAsP multiple quantum well (MQW) lasers was performed by using entirely organic compounds as precursors. Tertiarybutylarsine (TBAs), tertiarybutylphosphine (TBP) and organic doping sources were used. The quality of the hetero-interfaces was investigated by means of photoluminescence (PL) and transmission electron microscopy (TEM). The difference between the cases using TBP and PH3 was described, focusing on the waiting time dependence of the hetero-interface quality. The PL FWHM measured at 4.2 K was as small as 6.1 meV with optimized growth conditions, and the TEM images also proved excellent hetero-interfaces of the MQW structure grown with TBAs and TBP. InGaAs/InGaAsP separate confinement heterostructure 3 QW lasers grown by entire organic source MOVPE (EOS-MOVPE) had a threshold current density of 710 A/cm2, an internal loss of 15 cm-1 and an internal quantum efficiency of 70%.
UR - http://www.scopus.com/inward/record.url?scp=0028761915&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0028761915&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(94)91158-4
DO - 10.1016/0022-0248(94)91158-4
M3 - Article
AN - SCOPUS:0028761915
SN - 0022-0248
VL - 145
SP - 886
EP - 891
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -