Metalorganic vapor phase epitaxy growth of InGaAsP multi quantum well laser diodes using entirely organic sources

M. Horita, M. Tsurusawa, Katsuyuki Utaka, Yuichi Matsushima

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Metalorganic vapor phase epitaxy (MOVPE) of InGaAsP multiple quantum well (MQW) lasers was performed by using entirely organic compounds as precursors. Tertiarybutylarsine (TBAs), tertiarybutylphosphine (TBP) and organic doping sources were used. The quality of the hetero-interfaces was investigated by means of photoluminescence (PL) and transmission electron microscopy (TEM). The difference between the cases using TBP and PH3 was described, focusing on the waiting time dependence of the hetero-interface quality. The PL FWHM measured at 4.2 K was as small as 6.1 meV with optimized growth conditions, and the TEM images also proved excellent hetero-interfaces of the MQW structure grown with TBAs and TBP. InGaAs/InGaAsP separate confinement heterostructure 3 QW lasers grown by entire organic source MOVPE (EOS-MOVPE) had a threshold current density of 710 A/cm2, an internal loss of 15 cm-1 and an internal quantum efficiency of 70%.

Original languageEnglish
Pages (from-to)886-891
Number of pages6
JournalJournal of Crystal Growth
Volume145
Issue number1-4
DOIs
Publication statusPublished - 1994 Dec 2
Externally publishedYes

Fingerprint

Quantum well lasers
Metallorganic vapor phase epitaxy
quantum well lasers
vapor phase epitaxy
Semiconductor quantum wells
Semiconductor lasers
Photoluminescence
semiconductor lasers
Transmission electron microscopy
Threshold current density
Full width at half maximum
Quantum efficiency
Organic compounds
photoluminescence
Heterojunctions
transmission electron microscopy
Doping (additives)
organic compounds
threshold currents
time dependence

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Metalorganic vapor phase epitaxy growth of InGaAsP multi quantum well laser diodes using entirely organic sources. / Horita, M.; Tsurusawa, M.; Utaka, Katsuyuki; Matsushima, Yuichi.

In: Journal of Crystal Growth, Vol. 145, No. 1-4, 02.12.1994, p. 886-891.

Research output: Contribution to journalArticle

@article{956801e6368d48538b028172b1d8a790,
title = "Metalorganic vapor phase epitaxy growth of InGaAsP multi quantum well laser diodes using entirely organic sources",
abstract = "Metalorganic vapor phase epitaxy (MOVPE) of InGaAsP multiple quantum well (MQW) lasers was performed by using entirely organic compounds as precursors. Tertiarybutylarsine (TBAs), tertiarybutylphosphine (TBP) and organic doping sources were used. The quality of the hetero-interfaces was investigated by means of photoluminescence (PL) and transmission electron microscopy (TEM). The difference between the cases using TBP and PH3 was described, focusing on the waiting time dependence of the hetero-interface quality. The PL FWHM measured at 4.2 K was as small as 6.1 meV with optimized growth conditions, and the TEM images also proved excellent hetero-interfaces of the MQW structure grown with TBAs and TBP. InGaAs/InGaAsP separate confinement heterostructure 3 QW lasers grown by entire organic source MOVPE (EOS-MOVPE) had a threshold current density of 710 A/cm2, an internal loss of 15 cm-1 and an internal quantum efficiency of 70{\%}.",
author = "M. Horita and M. Tsurusawa and Katsuyuki Utaka and Yuichi Matsushima",
year = "1994",
month = "12",
day = "2",
doi = "10.1016/0022-0248(94)91158-4",
language = "English",
volume = "145",
pages = "886--891",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Metalorganic vapor phase epitaxy growth of InGaAsP multi quantum well laser diodes using entirely organic sources

AU - Horita, M.

AU - Tsurusawa, M.

AU - Utaka, Katsuyuki

AU - Matsushima, Yuichi

PY - 1994/12/2

Y1 - 1994/12/2

N2 - Metalorganic vapor phase epitaxy (MOVPE) of InGaAsP multiple quantum well (MQW) lasers was performed by using entirely organic compounds as precursors. Tertiarybutylarsine (TBAs), tertiarybutylphosphine (TBP) and organic doping sources were used. The quality of the hetero-interfaces was investigated by means of photoluminescence (PL) and transmission electron microscopy (TEM). The difference between the cases using TBP and PH3 was described, focusing on the waiting time dependence of the hetero-interface quality. The PL FWHM measured at 4.2 K was as small as 6.1 meV with optimized growth conditions, and the TEM images also proved excellent hetero-interfaces of the MQW structure grown with TBAs and TBP. InGaAs/InGaAsP separate confinement heterostructure 3 QW lasers grown by entire organic source MOVPE (EOS-MOVPE) had a threshold current density of 710 A/cm2, an internal loss of 15 cm-1 and an internal quantum efficiency of 70%.

AB - Metalorganic vapor phase epitaxy (MOVPE) of InGaAsP multiple quantum well (MQW) lasers was performed by using entirely organic compounds as precursors. Tertiarybutylarsine (TBAs), tertiarybutylphosphine (TBP) and organic doping sources were used. The quality of the hetero-interfaces was investigated by means of photoluminescence (PL) and transmission electron microscopy (TEM). The difference between the cases using TBP and PH3 was described, focusing on the waiting time dependence of the hetero-interface quality. The PL FWHM measured at 4.2 K was as small as 6.1 meV with optimized growth conditions, and the TEM images also proved excellent hetero-interfaces of the MQW structure grown with TBAs and TBP. InGaAs/InGaAsP separate confinement heterostructure 3 QW lasers grown by entire organic source MOVPE (EOS-MOVPE) had a threshold current density of 710 A/cm2, an internal loss of 15 cm-1 and an internal quantum efficiency of 70%.

UR - http://www.scopus.com/inward/record.url?scp=0028761915&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028761915&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(94)91158-4

DO - 10.1016/0022-0248(94)91158-4

M3 - Article

VL - 145

SP - 886

EP - 891

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -