Metalorganic vapor phase epitaxy growth of InGaAsP multi quantum well laser diodes using entirely organic sources

M. Horita, M. Tsurusawa, Katsuyuki Utaka, Yuichi Matsushima

Research output: Contribution to journalArticle

1 Citation (Scopus)


Metalorganic vapor phase epitaxy (MOVPE) of InGaAsP multiple quantum well (MQW) lasers was performed by using entirely organic compounds as precursors. Tertiarybutylarsine (TBAs), tertiarybutylphosphine (TBP) and organic doping sources were used. The quality of the hetero-interfaces was investigated by means of photoluminescence (PL) and transmission electron microscopy (TEM). The difference between the cases using TBP and PH3 was described, focusing on the waiting time dependence of the hetero-interface quality. The PL FWHM measured at 4.2 K was as small as 6.1 meV with optimized growth conditions, and the TEM images also proved excellent hetero-interfaces of the MQW structure grown with TBAs and TBP. InGaAs/InGaAsP separate confinement heterostructure 3 QW lasers grown by entire organic source MOVPE (EOS-MOVPE) had a threshold current density of 710 A/cm2, an internal loss of 15 cm-1 and an internal quantum efficiency of 70%.

Original languageEnglish
Pages (from-to)886-891
Number of pages6
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 1994 Dec 2
Externally publishedYes


ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this