Metalorganic vapor phase epitaxy growth of InGaP using tertiarybutylphosphine and its application to selective regrowth of current blocking layers of laser diodes

M. Horita, M. Usami, Yuichi Matsushima

Research output: Contribution to journalArticle

Abstract

The selective regrowth of InGaP on patterned GaAs substrates was performed by metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylphosphine (TBP) as the phosphorus source. Photoluminescence properties and doping characteristics of InGaP layers grown using TBP were investigated. The selective regrowth of InGaP layers was utilized to form current blocking layers for InGaAs/GaAs/InGaP separate confinement heterostructure strained double quantum well lasers. The characteristics of the buried heterostructure lasers, such as the far-field pattern of the output light and the output power versus current characteristics, proved that the current blocking layers grown by MOVPE using TBP fulfilled their function.

Original languageEnglish
Pages (from-to)291-296
Number of pages6
JournalJournal of Crystal Growth
Volume145
Issue number1-4
DOIs
Publication statusPublished - 1994 Dec 2
Externally publishedYes

Fingerprint

Metallorganic vapor phase epitaxy
vapor phase epitaxy
Semiconductor lasers
Heterojunctions
semiconductor lasers
Quantum well lasers
Phosphorus
Photoluminescence
Doping (additives)
Lasers
output
quantum well lasers
Substrates
far fields
phosphorus
photoluminescence
gallium arsenide
lasers

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Metalorganic vapor phase epitaxy growth of InGaP using tertiarybutylphosphine and its application to selective regrowth of current blocking layers of laser diodes. / Horita, M.; Usami, M.; Matsushima, Yuichi.

In: Journal of Crystal Growth, Vol. 145, No. 1-4, 02.12.1994, p. 291-296.

Research output: Contribution to journalArticle

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