Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy

Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

125 Citations (Scopus)

Abstract

A study was conducted on the magnesium (Mg)-acceptor activation mechanism and transport characteristics in a Mg-doped InGaN layer grown by metalorganic vapor phase epitaxy. It was found that self-compensation occurred in Mg-doped InGaN at higher doping levels. The temperature dependence of the hole concentration in Mg-doped InGaN showed that the acceptor activation energy decreased with increasing mole fraction.

Original languageEnglish
Pages (from-to)3370-3375
Number of pages6
JournalJournal of Applied Physics
Volume93
Issue number6
DOIs
Publication statusPublished - 2003 Mar 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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