Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy

Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

122 Citations (Scopus)

Abstract

A study was conducted on the magnesium (Mg)-acceptor activation mechanism and transport characteristics in a Mg-doped InGaN layer grown by metalorganic vapor phase epitaxy. It was found that self-compensation occurred in Mg-doped InGaN at higher doping levels. The temperature dependence of the hole concentration in Mg-doped InGaN showed that the acceptor activation energy decreased with increasing mole fraction.

Original languageEnglish
Pages (from-to)3370-3375
Number of pages6
JournalJournal of Applied Physics
Volume93
Issue number6
DOIs
Publication statusPublished - 2003 Mar 15
Externally publishedYes

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vapor phase epitaxy
magnesium
activation
activation energy
temperature dependence

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy. / Kumakura, Kazuhide; Makimoto, Toshiki; Kobayashi, Naoki.

In: Journal of Applied Physics, Vol. 93, No. 6, 15.03.2003, p. 3370-3375.

Research output: Contribution to journalArticle

@article{11a67e3788784d36a8a6729ca2a47c78,
title = "Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy",
abstract = "A study was conducted on the magnesium (Mg)-acceptor activation mechanism and transport characteristics in a Mg-doped InGaN layer grown by metalorganic vapor phase epitaxy. It was found that self-compensation occurred in Mg-doped InGaN at higher doping levels. The temperature dependence of the hole concentration in Mg-doped InGaN showed that the acceptor activation energy decreased with increasing mole fraction.",
author = "Kazuhide Kumakura and Toshiki Makimoto and Naoki Kobayashi",
year = "2003",
month = "3",
day = "15",
doi = "10.1063/1.1545155",
language = "English",
volume = "93",
pages = "3370--3375",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy

AU - Kumakura, Kazuhide

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 2003/3/15

Y1 - 2003/3/15

N2 - A study was conducted on the magnesium (Mg)-acceptor activation mechanism and transport characteristics in a Mg-doped InGaN layer grown by metalorganic vapor phase epitaxy. It was found that self-compensation occurred in Mg-doped InGaN at higher doping levels. The temperature dependence of the hole concentration in Mg-doped InGaN showed that the acceptor activation energy decreased with increasing mole fraction.

AB - A study was conducted on the magnesium (Mg)-acceptor activation mechanism and transport characteristics in a Mg-doped InGaN layer grown by metalorganic vapor phase epitaxy. It was found that self-compensation occurred in Mg-doped InGaN at higher doping levels. The temperature dependence of the hole concentration in Mg-doped InGaN showed that the acceptor activation energy decreased with increasing mole fraction.

UR - http://www.scopus.com/inward/record.url?scp=0037445013&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037445013&partnerID=8YFLogxK

U2 - 10.1063/1.1545155

DO - 10.1063/1.1545155

M3 - Article

AN - SCOPUS:0037445013

VL - 93

SP - 3370

EP - 3375

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

ER -