Abstract
A study was conducted on the magnesium (Mg)-acceptor activation mechanism and transport characteristics in a Mg-doped InGaN layer grown by metalorganic vapor phase epitaxy. It was found that self-compensation occurred in Mg-doped InGaN at higher doping levels. The temperature dependence of the hole concentration in Mg-doped InGaN showed that the acceptor activation energy decreased with increasing mole fraction.
| Original language | English |
|---|---|
| Pages (from-to) | 3370-3375 |
| Number of pages | 6 |
| Journal | Journal of Applied Physics |
| Volume | 93 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2003 Mar 15 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)