A study was conducted on the magnesium (Mg)-acceptor activation mechanism and transport characteristics in a Mg-doped InGaN layer grown by metalorganic vapor phase epitaxy. It was found that self-compensation occurred in Mg-doped InGaN at higher doping levels. The temperature dependence of the hole concentration in Mg-doped InGaN showed that the acceptor activation energy decreased with increasing mole fraction.
|Number of pages||6|
|Journal||Journal of Applied Physics|
|Publication status||Published - 2003 Mar 15|
ASJC Scopus subject areas
- Physics and Astronomy(all)