Micro-Raman spectroscopy on pentacene thin-film transistors

Yoshinobu Hosoi, Daniel Martinez Deyra, Kazuhiro Nakajima, Yukio Furukawa

    Research output: Contribution to journalArticle

    16 Citations (Scopus)

    Abstract

    Molecular orientation in pentacene films and thin-film transistors has been studied by micro-Raman spectroscopy. We have found that the relative intensity of the 1596-cm-1 band (B3g) is sensitive to the molecular orientation. The standing orientation was observed for the films formed on the bare and hexamethyldisilazane (HMDS)-modified SiO2 surfaces and the Au surfaces modified with self-assembled monolayers (SAMs), whereas the lying orientation for the films on the bare Au surface. We have explicitly demonstrated the differences of the molecular orientation in the films on SiO2 dielectric layers and Au electrodes in the devices by mapping measurements.

    Original languageEnglish
    Pages (from-to)317-323
    Number of pages7
    JournalMolecular Crystals and Liquid Crystals
    Volume491
    DOIs
    Publication statusPublished - 2008

    Fingerprint

    Thin film transistors
    Raman spectroscopy
    Molecular orientation
    transistors
    thin films
    Self assembled monolayers
    Crystal orientation
    Electrodes
    pentacene
    electrodes

    Keywords

    • Organic thin-film transistor
    • Pentacene
    • Raman spectroscopy

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Materials Science(all)

    Cite this

    Micro-Raman spectroscopy on pentacene thin-film transistors. / Hosoi, Yoshinobu; Deyra, Daniel Martinez; Nakajima, Kazuhiro; Furukawa, Yukio.

    In: Molecular Crystals and Liquid Crystals, Vol. 491, 2008, p. 317-323.

    Research output: Contribution to journalArticle

    Hosoi, Yoshinobu ; Deyra, Daniel Martinez ; Nakajima, Kazuhiro ; Furukawa, Yukio. / Micro-Raman spectroscopy on pentacene thin-film transistors. In: Molecular Crystals and Liquid Crystals. 2008 ; Vol. 491. pp. 317-323.
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