Micro/nano fabrication of nanopores formed through SiN

D. S. Lee, H. W. Song, W. I. Jang, S. Shoji, M. Y. Jung

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

This paper reports a novel micro/nano fabrication method for mass production of low-stressed silicon nitride (SiN) membrane nanopores with the precisely size-controlled 30 nm in diameter using an anisotropic reactive ion etching (ARIE) and nano-imprinting method, while maintaining compatibility with CMOS IC processes. Our method differs from that of Striemer group [1] in the specific membrane material, and Hien group [2] in the specific fabrication protocols. Micromachining protocols facilitate the accomplishing nanostructures to be used for separation of collections of particles. However, membrane fragility and complex fabrication prevents the use of ultrathin membranes for molecular separations. Here, we report a novel, simple and robust micro/nano fabrication method of strong SiN nanosieve membrane with the small, precise, and uniform nano-sized pore structures with a diameter of 30 nm.

Original languageEnglish
Pages (from-to)884-887
Number of pages4
JournalProcedia Engineering
Volume25
DOIs
Publication statusPublished - 2011 Dec 1
Event25th Eurosensors Conference - Athens, Greece
Duration: 2011 Sep 42011 Sep 7

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Keywords

  • ARIE
  • E-beam Resist
  • Low stressed SiN
  • Mass production
  • Micro/nano fabrication
  • Nanopore

ASJC Scopus subject areas

  • Engineering(all)

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