Microscopic characterization of electrochemical properties of silicon wafer surfaces

Takayuki Homma, Tadahiro Kono, Tetsuya Osaka, Masaharu Watanabe, Kiyoshi Nagai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Microscopic mapping of electrochemical characteristics of silicon wafer surfaces correlates with their microstructural properties was demonstrated in order to elucidate the spontaneous nucleation (or "contamination") process of trace metals during wafer cleaning processes. Nucleation conditions of trace metals were investigated and the micro-structural properties of the sites for the preferential nucleation, such as nanometer-scale defects, were characterized. Then electrochemical properties of these sites were investigated using an electric force microscope (EFM) which is based on a scanning probe microscopy, as well as potentiometric analysis. It was clarified that the defect sites (typically in the order of several to tens of nm) of clean H-Si(100) wafer surfaces possess electrochemically negative potential with respect to non-defected area, indicating that these sites were more active for the reductive deposition of the trace meal ions. The metal particles deposited at these sites were also found to possess negative potential. However, when the wafer surface was covered by oxide, the negative shift at the defect sites was not observed, although the defects did exist topographically. Based upon these results, mechanism of trace metal nucleation at defect sites is discussed.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsC.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, H.J. Dawson
Pages621-633
Number of pages13
Volume4218
Publication statusPublished - 2000
EventHigh Purity Silicon VI - Phoenix, AZ, United States
Duration: 2000 Oct 222000 Oct 27

Other

OtherHigh Purity Silicon VI
CountryUnited States
CityPhoenix, AZ
Period00/10/2200/10/27

Fingerprint

Electrochemical properties
Silicon wafers
wafers
Nucleation
Defects
nucleation
defects
silicon
metals
potentiometric analysis
Scanning probe microscopy
metal particles
cleaning
Structural properties
Cleaning
contamination
Microscopes
Contamination
microscopes
microscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Homma, T., Kono, T., Osaka, T., Watanabe, M., & Nagai, K. (2000). Microscopic characterization of electrochemical properties of silicon wafer surfaces. In C. L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, & H. J. Dawson (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4218, pp. 621-633)

Microscopic characterization of electrochemical properties of silicon wafer surfaces. / Homma, Takayuki; Kono, Tadahiro; Osaka, Tetsuya; Watanabe, Masaharu; Nagai, Kiyoshi.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / C.L. Claeys; P. Rai-Choudhury; M. Watanabe; P. Stallhofer; H.J. Dawson. Vol. 4218 2000. p. 621-633.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Homma, T, Kono, T, Osaka, T, Watanabe, M & Nagai, K 2000, Microscopic characterization of electrochemical properties of silicon wafer surfaces. in CL Claeys, P Rai-Choudhury, M Watanabe, P Stallhofer & HJ Dawson (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 4218, pp. 621-633, High Purity Silicon VI, Phoenix, AZ, United States, 00/10/22.
Homma T, Kono T, Osaka T, Watanabe M, Nagai K. Microscopic characterization of electrochemical properties of silicon wafer surfaces. In Claeys CL, Rai-Choudhury P, Watanabe M, Stallhofer P, Dawson HJ, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4218. 2000. p. 621-633
Homma, Takayuki ; Kono, Tadahiro ; Osaka, Tetsuya ; Watanabe, Masaharu ; Nagai, Kiyoshi. / Microscopic characterization of electrochemical properties of silicon wafer surfaces. Proceedings of SPIE - The International Society for Optical Engineering. editor / C.L. Claeys ; P. Rai-Choudhury ; M. Watanabe ; P. Stallhofer ; H.J. Dawson. Vol. 4218 2000. pp. 621-633
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