MICROSTRUCTURAL CHANGE DURING GAS PRESSURE SINTERING OF SILICON NITRIDE.

Mamoru Mitomo, Chuhei Oshima, Masayuki Tsutsumi

    Research output: Chapter in Book/Report/Conference proceedingChapter

    1 Citation (Scopus)

    Abstract

    The gas pressure sintering of silicon nitride with 5% MgO as an additive was performed under 10 atm N//2 at 1450 to 1900 degree C. Maximum density of 95% of theoretical value, 3. 19 g/cm**3, was obtained at 1800 degree C. The densification was due to liquid phase sintering and divided into two processes, rearrangement and solution-precipitation. Microstructural studies of cleavages and etched ones revealed that the densification was mainly attributed to rearrangement at lower temperatures than 1500 degree C and solution-precipitation at higher temperatures.

    Original languageEnglish
    Title of host publicationJ Ceram Soc Jpn
    Pages356-360
    Number of pages5
    Volume84
    Edition8
    Publication statusPublished - 1976

    Fingerprint

    Silicon nitride
    Densification
    Sintering
    Liquid phase sintering
    Gases
    Temperature

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Mitomo, M., Oshima, C., & Tsutsumi, M. (1976). MICROSTRUCTURAL CHANGE DURING GAS PRESSURE SINTERING OF SILICON NITRIDE. In J Ceram Soc Jpn (8 ed., Vol. 84, pp. 356-360)

    MICROSTRUCTURAL CHANGE DURING GAS PRESSURE SINTERING OF SILICON NITRIDE. / Mitomo, Mamoru; Oshima, Chuhei; Tsutsumi, Masayuki.

    J Ceram Soc Jpn. Vol. 84 8. ed. 1976. p. 356-360.

    Research output: Chapter in Book/Report/Conference proceedingChapter

    Mitomo, M, Oshima, C & Tsutsumi, M 1976, MICROSTRUCTURAL CHANGE DURING GAS PRESSURE SINTERING OF SILICON NITRIDE. in J Ceram Soc Jpn. 8 edn, vol. 84, pp. 356-360.
    Mitomo M, Oshima C, Tsutsumi M. MICROSTRUCTURAL CHANGE DURING GAS PRESSURE SINTERING OF SILICON NITRIDE. In J Ceram Soc Jpn. 8 ed. Vol. 84. 1976. p. 356-360
    Mitomo, Mamoru ; Oshima, Chuhei ; Tsutsumi, Masayuki. / MICROSTRUCTURAL CHANGE DURING GAS PRESSURE SINTERING OF SILICON NITRIDE. J Ceram Soc Jpn. Vol. 84 8. ed. 1976. pp. 356-360
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