MICROSTRUCTURAL CHANGE DURING GAS PRESSURE SINTERING OF SILICON NITRIDE.

Mamoru Mitomo, Chuhei Oshima, Masayuki Tsutsumi

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    Abstract

    The gas pressure sintering of silicon nitride with 5% MgO as an additive was performed under 10 atm N//2 at 1450 to 1900 degree C. Maximum density of 95% of theoretical value, 3. 19 g/cm**3, was obtained at 1800 degree C. The densification was due to liquid phase sintering and divided into two processes, rearrangement and solution-precipitation. Microstructural studies of cleavages and etched ones revealed that the densification was mainly attributed to rearrangement at lower temperatures than 1500 degree C and solution-precipitation at higher temperatures.

    Original languageEnglish
    Title of host publicationJ Ceram Soc Jpn
    Pages356-360
    Number of pages5
    Volume84
    Edition8
    Publication statusPublished - 1976

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    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Mitomo, M., Oshima, C., & Tsutsumi, M. (1976). MICROSTRUCTURAL CHANGE DURING GAS PRESSURE SINTERING OF SILICON NITRIDE. In J Ceram Soc Jpn (8 ed., Vol. 84, pp. 356-360)