Microwave atomic force microscopy imaging for nanometer-scale electrical property characterization

Lan Zhang, Yang Ju, Atsushi Hosoi, Akifumi Fujimoto

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We introduce a new type of microscopy which is capable of investigating surface topography and electrical property of conductive and dielectric materials simultaneously on a nanometer scale. The microwave atomic force microscopy is a combination of the principles of the scanning probe microscope and the microwave-measurement technique. As a result, under the noncontact AFM working conditions, we successfully generated a microwave image of a 200-nm Au film coating on a glass wafer substrate with a spatial resolution of 120 nm and a measured voltage difference of 19.2 mV between the two materials.

Original languageEnglish
Article number123708
JournalReview of Scientific Instruments
Volume81
Issue number12
DOIs
Publication statusPublished - 2010 Dec
Externally publishedYes

Fingerprint

Atomic force microscopy
Electric properties
electrical properties
Microwaves
atomic force microscopy
Microwave measurement
Imaging techniques
microwaves
Conductive materials
Surface topography
Microscopic examination
Microscopes
Scanning
Glass
Coatings
topography
Electric potential
Substrates
spatial resolution
microscopes

ASJC Scopus subject areas

  • Instrumentation

Cite this

Microwave atomic force microscopy imaging for nanometer-scale electrical property characterization. / Zhang, Lan; Ju, Yang; Hosoi, Atsushi; Fujimoto, Akifumi.

In: Review of Scientific Instruments, Vol. 81, No. 12, 123708, 12.2010.

Research output: Contribution to journalArticle

@article{fab9399cd373437ebc21a3384c3d18e3,
title = "Microwave atomic force microscopy imaging for nanometer-scale electrical property characterization",
abstract = "We introduce a new type of microscopy which is capable of investigating surface topography and electrical property of conductive and dielectric materials simultaneously on a nanometer scale. The microwave atomic force microscopy is a combination of the principles of the scanning probe microscope and the microwave-measurement technique. As a result, under the noncontact AFM working conditions, we successfully generated a microwave image of a 200-nm Au film coating on a glass wafer substrate with a spatial resolution of 120 nm and a measured voltage difference of 19.2 mV between the two materials.",
author = "Lan Zhang and Yang Ju and Atsushi Hosoi and Akifumi Fujimoto",
year = "2010",
month = "12",
doi = "10.1063/1.3525058",
language = "English",
volume = "81",
journal = "Review of Scientific Instruments",
issn = "0034-6748",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Microwave atomic force microscopy imaging for nanometer-scale electrical property characterization

AU - Zhang, Lan

AU - Ju, Yang

AU - Hosoi, Atsushi

AU - Fujimoto, Akifumi

PY - 2010/12

Y1 - 2010/12

N2 - We introduce a new type of microscopy which is capable of investigating surface topography and electrical property of conductive and dielectric materials simultaneously on a nanometer scale. The microwave atomic force microscopy is a combination of the principles of the scanning probe microscope and the microwave-measurement technique. As a result, under the noncontact AFM working conditions, we successfully generated a microwave image of a 200-nm Au film coating on a glass wafer substrate with a spatial resolution of 120 nm and a measured voltage difference of 19.2 mV between the two materials.

AB - We introduce a new type of microscopy which is capable of investigating surface topography and electrical property of conductive and dielectric materials simultaneously on a nanometer scale. The microwave atomic force microscopy is a combination of the principles of the scanning probe microscope and the microwave-measurement technique. As a result, under the noncontact AFM working conditions, we successfully generated a microwave image of a 200-nm Au film coating on a glass wafer substrate with a spatial resolution of 120 nm and a measured voltage difference of 19.2 mV between the two materials.

UR - http://www.scopus.com/inward/record.url?scp=78650864446&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650864446&partnerID=8YFLogxK

U2 - 10.1063/1.3525058

DO - 10.1063/1.3525058

M3 - Article

VL - 81

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

SN - 0034-6748

IS - 12

M1 - 123708

ER -