Microwave atomic force microscopy: Quantitative measurement and characterization of electrical properties on the nanometer scale

Lan Zhang, Yang Ju, Atsushi Hosoi, Akifumi Fujimoto

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In this paper, we report a noncontact and quantitative method of evaluating and characterizing electrical properties with a nanometer-scale spatial resolution. Microwave atomic force microscopy (M-AFM) can be used to obtain the topography and microwave image of materials in one scanning process simultaneously. Under the frequency modulation (FM) AFM mode, we successfully applied M-AFM to create a microwave image of a Au nanowire with a spatial resolution of 170 nm. Moreover, based on the analytical and explicit expressions proposed, M-AFM can implement the quantitative evaluation and characterization of the local conductivity of materials on the nanometer scale.

Original languageEnglish
Article number016602
JournalApplied Physics Express
Volume5
Issue number1
DOIs
Publication statusPublished - 2012 Jan
Externally publishedYes

Fingerprint

Atomic force microscopy
Electric properties
electrical properties
Microwaves
atomic force microscopy
microwaves
spatial resolution
Frequency modulation
frequency modulation
Topography
Nanowires
topography
nanowires
Scanning
conductivity
scanning
evaluation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Microwave atomic force microscopy : Quantitative measurement and characterization of electrical properties on the nanometer scale. / Zhang, Lan; Ju, Yang; Hosoi, Atsushi; Fujimoto, Akifumi.

In: Applied Physics Express, Vol. 5, No. 1, 016602, 01.2012.

Research output: Contribution to journalArticle

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