Microwave operation of diamond metal-insulator-semiconductor field-effect transistors fabricated on single-crystal chemical vapor deposition substrate

Kazuyuki Hirama, Hidenori Takayanagi, Shintaro Yamauchi, Hitoshi Umezawa, Hiroshi Kawarada

Research output: Contribution to journalArticle

3 Citations (Scopus)


Diamond metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated on single-crystal diamond films, and small- and large-signal RF operations were evaluated. This is the first report on large-signal RF operation for diamond MISFETs, and the RF power density was 2.14 W/mm at 1 GHz. This value is comparable to those of GaAs FETs and Si lateral-diffusion metal-oxide-semiconductor field-effect transistors (LDMOSFETs). Also, for single-crystal diamond MISFETs, the highest cutoff frequency (fT) of 30 GHz was obtained in 0.3-μm-gate-length (LG) MISFET. The carrier velocity, which is extracted from the relationship between fT and LG, reached 6×106 cm/s.

Original languageEnglish
Pages (from-to)201-209
Number of pages9
JournalNew Diamond and Frontier Carbon Technology
Issue number4
Publication statusPublished - 2007 Dec 1



  • Diamond
  • Hydrogen termination
  • Large signal
  • RF

ASJC Scopus subject areas

  • Materials Science(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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