Microwave operation of diamond metal-insulator-semiconductor field-effect transistors fabricated on single-crystal chemical vapor deposition substrate

Kazuyuki Hirama, Hidenori Takayanagi, Shintaro Yamauchi, Hitoshi Umezawa, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    Diamond metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated on single-crystal diamond films, and small- and large-signal RF operations were evaluated. This is the first report on large-signal RF operation for diamond MISFETs, and the RF power density was 2.14 W/mm at 1 GHz. This value is comparable to those of GaAs FETs and Si lateral-diffusion metal-oxide-semiconductor field-effect transistors (LDMOSFETs). Also, for single-crystal diamond MISFETs, the highest cutoff frequency (fT) of 30 GHz was obtained in 0.3-μm-gate-length (LG) MISFET. The carrier velocity, which is extracted from the relationship between fT and LG, reached 6×106 cm/s.

    Original languageEnglish
    Pages (from-to)201-209
    Number of pages9
    JournalNew Diamond and Frontier Carbon Technology
    Volume17
    Issue number4
    Publication statusPublished - 2007

    Fingerprint

    MISFET devices
    Diamond
    MIS (semiconductors)
    Chemical vapor deposition
    Diamonds
    field effect transistors
    diamonds
    Microwaves
    Single crystals
    vapor deposition
    microwaves
    single crystals
    Substrates
    Diamond films
    Cutoff frequency
    MOSFET devices
    Field effect transistors
    diamond films
    metal oxide semiconductors
    radiant flux density

    Keywords

    • Diamond
    • Hydrogen termination
    • Large signal
    • MISFET
    • RF

    ASJC Scopus subject areas

    • Surfaces, Coatings and Films
    • Surfaces and Interfaces
    • Materials Science(all)

    Cite this

    Microwave operation of diamond metal-insulator-semiconductor field-effect transistors fabricated on single-crystal chemical vapor deposition substrate. / Hirama, Kazuyuki; Takayanagi, Hidenori; Yamauchi, Shintaro; Umezawa, Hitoshi; Kawarada, Hiroshi.

    In: New Diamond and Frontier Carbon Technology, Vol. 17, No. 4, 2007, p. 201-209.

    Research output: Contribution to journalArticle

    @article{d331e7d6db804ff3b1de3c13d73d433c,
    title = "Microwave operation of diamond metal-insulator-semiconductor field-effect transistors fabricated on single-crystal chemical vapor deposition substrate",
    abstract = "Diamond metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated on single-crystal diamond films, and small- and large-signal RF operations were evaluated. This is the first report on large-signal RF operation for diamond MISFETs, and the RF power density was 2.14 W/mm at 1 GHz. This value is comparable to those of GaAs FETs and Si lateral-diffusion metal-oxide-semiconductor field-effect transistors (LDMOSFETs). Also, for single-crystal diamond MISFETs, the highest cutoff frequency (fT) of 30 GHz was obtained in 0.3-μm-gate-length (LG) MISFET. The carrier velocity, which is extracted from the relationship between fT and LG, reached 6×106 cm/s.",
    keywords = "Diamond, Hydrogen termination, Large signal, MISFET, RF",
    author = "Kazuyuki Hirama and Hidenori Takayanagi and Shintaro Yamauchi and Hitoshi Umezawa and Hiroshi Kawarada",
    year = "2007",
    language = "English",
    volume = "17",
    pages = "201--209",
    journal = "New Diamond and Frontier Carbon Technology",
    issn = "1344-9931",
    publisher = "M Y U Scientific Publishing Division",
    number = "4",

    }

    TY - JOUR

    T1 - Microwave operation of diamond metal-insulator-semiconductor field-effect transistors fabricated on single-crystal chemical vapor deposition substrate

    AU - Hirama, Kazuyuki

    AU - Takayanagi, Hidenori

    AU - Yamauchi, Shintaro

    AU - Umezawa, Hitoshi

    AU - Kawarada, Hiroshi

    PY - 2007

    Y1 - 2007

    N2 - Diamond metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated on single-crystal diamond films, and small- and large-signal RF operations were evaluated. This is the first report on large-signal RF operation for diamond MISFETs, and the RF power density was 2.14 W/mm at 1 GHz. This value is comparable to those of GaAs FETs and Si lateral-diffusion metal-oxide-semiconductor field-effect transistors (LDMOSFETs). Also, for single-crystal diamond MISFETs, the highest cutoff frequency (fT) of 30 GHz was obtained in 0.3-μm-gate-length (LG) MISFET. The carrier velocity, which is extracted from the relationship between fT and LG, reached 6×106 cm/s.

    AB - Diamond metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated on single-crystal diamond films, and small- and large-signal RF operations were evaluated. This is the first report on large-signal RF operation for diamond MISFETs, and the RF power density was 2.14 W/mm at 1 GHz. This value is comparable to those of GaAs FETs and Si lateral-diffusion metal-oxide-semiconductor field-effect transistors (LDMOSFETs). Also, for single-crystal diamond MISFETs, the highest cutoff frequency (fT) of 30 GHz was obtained in 0.3-μm-gate-length (LG) MISFET. The carrier velocity, which is extracted from the relationship between fT and LG, reached 6×106 cm/s.

    KW - Diamond

    KW - Hydrogen termination

    KW - Large signal

    KW - MISFET

    KW - RF

    UR - http://www.scopus.com/inward/record.url?scp=38149113421&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=38149113421&partnerID=8YFLogxK

    M3 - Article

    AN - SCOPUS:38149113421

    VL - 17

    SP - 201

    EP - 209

    JO - New Diamond and Frontier Carbon Technology

    JF - New Diamond and Frontier Carbon Technology

    SN - 1344-9931

    IS - 4

    ER -