MICROWAVE PLASMA CVD SYSTEM TO FABRICATE alpha -Si THIN FILMS OUT OF PLASMA.

Isamu Kato; Shin ichi Wakan; Shinji Hara

MICROWAVE PLASMA CVD SYSTEM TO FABRICATE alpha -Si THIN FILMS OUT OF PLASMA.

Isamu Kato^*, Shin ichi Wakan, Shinji Hara

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Chapter

32 Citations (Scopus)

Abstract

This study is concerned with the development of a system to fabricate thin films by a microwave plasma chemical vapour deposition method while keeping the substrate out of the discharge plasma. Si thin films are fabricated in a deposition region using an improved coaxial line type microwave CW discharge tube without a silicon deposition on the discharge tube wall. A very uniform Si thin film has been fabricated over a circle with a 10 cm diameter and the deposition rates are 50 to 400 A/min. The structure of the fabricated films is amorphous and the optical band gap is 1. 8 to 2. 0 eV.

Original language	English
Title of host publication	Japanese Journal of Applied Physics, Part 2: Letters
Volume	22
Edition	1
Publication status	Published - 1983 Jan

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "MICROWAVE PLASMA CVD SYSTEM TO FABRICATE alpha -Si THIN FILMS OUT OF PLASMA.",

abstract = "This study is concerned with the development of a system to fabricate thin films by a microwave plasma chemical vapour deposition method while keeping the substrate out of the discharge plasma. Si thin films are fabricated in a deposition region using an improved coaxial line type microwave CW discharge tube without a silicon deposition on the discharge tube wall. A very uniform Si thin film has been fabricated over a circle with a 10 cm diameter and the deposition rates are 50 to 400 A/min. The structure of the fabricated films is amorphous and the optical band gap is 1. 8 to 2. 0 eV.",

author = "Isamu Kato and Wakan, {Shin ichi} and Shinji Hara",

year = "1983",

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T1 - MICROWAVE PLASMA CVD SYSTEM TO FABRICATE alpha -Si THIN FILMS OUT OF PLASMA.

AU - Kato, Isamu

AU - Wakan, Shin ichi

AU - Hara, Shinji

PY - 1983/1

Y1 - 1983/1

N2 - This study is concerned with the development of a system to fabricate thin films by a microwave plasma chemical vapour deposition method while keeping the substrate out of the discharge plasma. Si thin films are fabricated in a deposition region using an improved coaxial line type microwave CW discharge tube without a silicon deposition on the discharge tube wall. A very uniform Si thin film has been fabricated over a circle with a 10 cm diameter and the deposition rates are 50 to 400 A/min. The structure of the fabricated films is amorphous and the optical band gap is 1. 8 to 2. 0 eV.

AB - This study is concerned with the development of a system to fabricate thin films by a microwave plasma chemical vapour deposition method while keeping the substrate out of the discharge plasma. Si thin films are fabricated in a deposition region using an improved coaxial line type microwave CW discharge tube without a silicon deposition on the discharge tube wall. A very uniform Si thin film has been fabricated over a circle with a 10 cm diameter and the deposition rates are 50 to 400 A/min. The structure of the fabricated films is amorphous and the optical band gap is 1. 8 to 2. 0 eV.

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BT - Japanese Journal of Applied Physics, Part 2: Letters

ER -

MICROWAVE PLASMA CVD SYSTEM TO FABRICATE alpha -Si THIN FILMS OUT OF PLASMA.

Abstract

ASJC Scopus subject areas

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