MICROWAVE PLASMA CVD SYSTEM TO FABRICATE alpha -Si THIN FILMS OUT OF PLASMA.

Isamu Kato, Shin ichi Wakan, Shinji Hara

    Research output: Chapter in Book/Report/Conference proceedingChapter

    31 Citations (Scopus)

    Abstract

    This study is concerned with the development of a system to fabricate thin films by a microwave plasma chemical vapour deposition method while keeping the substrate out of the discharge plasma. Si thin films are fabricated in a deposition region using an improved coaxial line type microwave CW discharge tube without a silicon deposition on the discharge tube wall. A very uniform Si thin film has been fabricated over a circle with a 10 cm diameter and the deposition rates are 50 to 400 A/min. The structure of the fabricated films is amorphous and the optical band gap is 1. 8 to 2. 0 eV.

    Original languageEnglish
    Title of host publicationJapanese Journal of Applied Physics, Part 2: Letters
    Volume22
    Edition1
    Publication statusPublished - 1983 Jan

    ASJC Scopus subject areas

    • Engineering(all)

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