Miniaturized diamond field-effect transistors for application in biosensors in electrolyte solution

Kwang Soup Song; Takahiro Hiraki; Hitoshi Umezawa; Hiroshi Kawarada

doi:10.1063/1.2454390

Miniaturized diamond field-effect transistors for application in biosensors in electrolyte solution

Kwang Soup Song^*, Takahiro Hiraki, Hitoshi Umezawa, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The authors fabricated diamond solution-gate field-effect transistors (SGFETs) with miniaturization of the channel length to 5 μm by photolithography. The channel surface was directly functionalized with amine by ultraviolet irradiation in an ammonia gas for 4 h and aminated diamond SGFETs were sensitive to pH by 40 mVpH. Urease was immobilized on the amine-modified channel surface, which was sensitive to urea by 27 μA /decade from 10-5 M to 10-2 M. The authors fabricated submicron-sized (500 nm) diamond SGFETs using electron-beam lithography. The transconductance (gm) was 56 mSmm, which was 930-fold greater than that of the 500 μm channel length.

Original language	English
Article number	063901
Journal	Applied Physics Letters
Volume	90
Issue number	6
DOIs	https://doi.org/10.1063/1.2454390
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2454390

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title = "Miniaturized diamond field-effect transistors for application in biosensors in electrolyte solution",

abstract = "The authors fabricated diamond solution-gate field-effect transistors (SGFETs) with miniaturization of the channel length to 5 μm by photolithography. The channel surface was directly functionalized with amine by ultraviolet irradiation in an ammonia gas for 4 h and aminated diamond SGFETs were sensitive to pH by 40 mVpH. Urease was immobilized on the amine-modified channel surface, which was sensitive to urea by 27 μA /decade from 10-5 M to 10-2 M. The authors fabricated submicron-sized (500 nm) diamond SGFETs using electron-beam lithography. The transconductance (gm) was 56 mSmm, which was 930-fold greater than that of the 500 μm channel length.",

author = "Song, {Kwang Soup} and Takahiro Hiraki and Hitoshi Umezawa and Hiroshi Kawarada",

note = "Funding Information: This work was supported by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science, and Technology. This work was also supported in part by the Advanced Research Institute for Science and Engineering, Waseda University.",

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doi = "10.1063/1.2454390",

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journal = "Applied Physics Letters",

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AU - Song, Kwang Soup

AU - Hiraki, Takahiro

AU - Umezawa, Hitoshi

AU - Kawarada, Hiroshi

N1 - Funding Information: This work was supported by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science, and Technology. This work was also supported in part by the Advanced Research Institute for Science and Engineering, Waseda University.

PY - 2007

Y1 - 2007

N2 - The authors fabricated diamond solution-gate field-effect transistors (SGFETs) with miniaturization of the channel length to 5 μm by photolithography. The channel surface was directly functionalized with amine by ultraviolet irradiation in an ammonia gas for 4 h and aminated diamond SGFETs were sensitive to pH by 40 mVpH. Urease was immobilized on the amine-modified channel surface, which was sensitive to urea by 27 μA /decade from 10-5 M to 10-2 M. The authors fabricated submicron-sized (500 nm) diamond SGFETs using electron-beam lithography. The transconductance (gm) was 56 mSmm, which was 930-fold greater than that of the 500 μm channel length.

AB - The authors fabricated diamond solution-gate field-effect transistors (SGFETs) with miniaturization of the channel length to 5 μm by photolithography. The channel surface was directly functionalized with amine by ultraviolet irradiation in an ammonia gas for 4 h and aminated diamond SGFETs were sensitive to pH by 40 mVpH. Urease was immobilized on the amine-modified channel surface, which was sensitive to urea by 27 μA /decade from 10-5 M to 10-2 M. The authors fabricated submicron-sized (500 nm) diamond SGFETs using electron-beam lithography. The transconductance (gm) was 56 mSmm, which was 930-fold greater than that of the 500 μm channel length.

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Miniaturized diamond field-effect transistors for application in biosensors in electrolyte solution

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