Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

K. Kumakura, Toshiki Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, H. Hasegawa

Research output: Contribution to journalArticle

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Abstract

We investigated the minority carrier diffusion length in p - and n-GaN by performing electron-beam-induced current measurements of GaN p-n junction diodes. Minority electron diffusion length in p-GaN strongly depended on the Mg doping concentration for relatively low dislocation density below 108 cm-2. It increased from 220 to 950 nm with decreasing Mg doping concentration from 3× 1019 to 4× 1018 cm-3. For relatively high dislocation density above 109 cm-2, it was less than 300 nm and independent of the Mg doping concentration. On the other hand, the minority hole diffusion length in n-GaN was shorter than 250 nm and less affected by the dislocation density and Si doping concentration. We discuss the doping-concentration and dislocation-density dependence of minority carrier diffusion length.

Original languageEnglish
Article number052105
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number5
DOIs
Publication statusPublished - 2005 Jan 31
Externally publishedYes

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diffusion length
minority carriers
minorities
junction diodes
electron diffusion
p-n junctions
electron beams

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Minority carrier diffusion length in GaN : Dislocation density and doping concentration dependence. / Kumakura, K.; Makimoto, Toshiki; Kobayashi, N.; Hashizume, T.; Fukui, T.; Hasegawa, H.

In: Applied Physics Letters, Vol. 86, No. 5, 052105, 31.01.2005, p. 1-3.

Research output: Contribution to journalArticle

Kumakura, K. ; Makimoto, Toshiki ; Kobayashi, N. ; Hashizume, T. ; Fukui, T. ; Hasegawa, H. / Minority carrier diffusion length in GaN : Dislocation density and doping concentration dependence. In: Applied Physics Letters. 2005 ; Vol. 86, No. 5. pp. 1-3.
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AU - Hasegawa, H.

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