Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors

K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, H. Hasegawa

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12 Citations (Scopus)


We fabricated InGaN p-n junction diode structures on SiC substrates by metalorganic vapor phase epitaxy, and investigated the minority carrier diffusion length in n- and p-InGaN layers by electron beam induced current measurements. The minority electron diffusion length in p-InGaN was little affected by the In content in InGaN. The diffusion length decreased with increasing Mg-doping concentration. The minority hole diffusion length in n-InGaN was little affected by Si-doping concentration but slightly decreased with increasing In content in InGaN. We also fabricated pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors and investigated their common-emitter current-voltage characteristics. The Si-doping concentration in the base was 4×1019 cm-3. The maximum current gain was 21 at a collector current of -10 mA for an emitter size of 30 μm×50 μm. This good performance is ascribed to the large conduction band discontinuity between the AlGaN emitter and InGaN base.

Original languageEnglish
Pages (from-to)787-790
Number of pages4
JournalJournal of Crystal Growth
Issue numberSPEC. ISS
Publication statusPublished - 2007 Jan 1



  • A3. Metalorganic vapor phase epitaxy
  • B1. Nitrides
  • B3. Bipolar transistors

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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