Abstract
We fabricated InGaN p-n junction diode structures on SiC substrates by metalorganic vapor phase epitaxy, and investigated the minority carrier diffusion length in n- and p-InGaN layers by electron beam induced current measurements. The minority electron diffusion length in p-InGaN was little affected by the In content in InGaN. The diffusion length decreased with increasing Mg-doping concentration. The minority hole diffusion length in n-InGaN was little affected by Si-doping concentration but slightly decreased with increasing In content in InGaN. We also fabricated pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors and investigated their common-emitter current-voltage characteristics. The Si-doping concentration in the base was 4×1019 cm-3. The maximum current gain was 21 at a collector current of -10 mA for an emitter size of 30 μm×50 μm. This good performance is ascribed to the large conduction band discontinuity between the AlGaN emitter and InGaN base.
| Original language | English |
|---|---|
| Pages (from-to) | 787-790 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 298 |
| Issue number | SPEC. ISS |
| DOIs | |
| Publication status | Published - 2007 Jan |
| Externally published | Yes |
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Keywords
- A3. Metalorganic vapor phase epitaxy
- B1. Nitrides
- B3. Bipolar transistors
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors. / Kumakura, K.; Makimoto, Toshiki; Kobayashi, N.; Hashizume, T.; Fukui, T.; Hasegawa, H.
In: Journal of Crystal Growth, Vol. 298, No. SPEC. ISS, 01.2007, p. 787-790.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors
AU - Kumakura, K.
AU - Makimoto, Toshiki
AU - Kobayashi, N.
AU - Hashizume, T.
AU - Fukui, T.
AU - Hasegawa, H.
PY - 2007/1
Y1 - 2007/1
N2 - We fabricated InGaN p-n junction diode structures on SiC substrates by metalorganic vapor phase epitaxy, and investigated the minority carrier diffusion length in n- and p-InGaN layers by electron beam induced current measurements. The minority electron diffusion length in p-InGaN was little affected by the In content in InGaN. The diffusion length decreased with increasing Mg-doping concentration. The minority hole diffusion length in n-InGaN was little affected by Si-doping concentration but slightly decreased with increasing In content in InGaN. We also fabricated pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors and investigated their common-emitter current-voltage characteristics. The Si-doping concentration in the base was 4×1019 cm-3. The maximum current gain was 21 at a collector current of -10 mA for an emitter size of 30 μm×50 μm. This good performance is ascribed to the large conduction band discontinuity between the AlGaN emitter and InGaN base.
AB - We fabricated InGaN p-n junction diode structures on SiC substrates by metalorganic vapor phase epitaxy, and investigated the minority carrier diffusion length in n- and p-InGaN layers by electron beam induced current measurements. The minority electron diffusion length in p-InGaN was little affected by the In content in InGaN. The diffusion length decreased with increasing Mg-doping concentration. The minority hole diffusion length in n-InGaN was little affected by Si-doping concentration but slightly decreased with increasing In content in InGaN. We also fabricated pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors and investigated their common-emitter current-voltage characteristics. The Si-doping concentration in the base was 4×1019 cm-3. The maximum current gain was 21 at a collector current of -10 mA for an emitter size of 30 μm×50 μm. This good performance is ascribed to the large conduction band discontinuity between the AlGaN emitter and InGaN base.
KW - A3. Metalorganic vapor phase epitaxy
KW - B1. Nitrides
KW - B3. Bipolar transistors
UR - http://www.scopus.com/inward/record.url?scp=33846421012&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33846421012&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2006.10.098
DO - 10.1016/j.jcrysgro.2006.10.098
M3 - Article
VL - 298
SP - 787
EP - 790
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - SPEC. ISS
ER -