Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors

K. Kumakura, Toshiki Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, H. Hasegawa

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We fabricated InGaN p-n junction diode structures on SiC substrates by metalorganic vapor phase epitaxy, and investigated the minority carrier diffusion length in n- and p-InGaN layers by electron beam induced current measurements. The minority electron diffusion length in p-InGaN was little affected by the In content in InGaN. The diffusion length decreased with increasing Mg-doping concentration. The minority hole diffusion length in n-InGaN was little affected by Si-doping concentration but slightly decreased with increasing In content in InGaN. We also fabricated pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors and investigated their common-emitter current-voltage characteristics. The Si-doping concentration in the base was 4×1019 cm-3. The maximum current gain was 21 at a collector current of -10 mA for an emitter size of 30 μm×50 μm. This good performance is ascribed to the large conduction band discontinuity between the AlGaN emitter and InGaN base.

Original languageEnglish
Pages (from-to)787-790
Number of pages4
JournalJournal of Crystal Growth
Volume298
Issue numberSPEC. ISS
DOIs
Publication statusPublished - 2007 Jan
Externally publishedYes

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Metallorganic vapor phase epitaxy
Heterojunction bipolar transistors
bipolar transistors
diffusion length
minority carriers
heterojunctions
emitters
Doping (additives)
minorities
junction diodes
electron diffusion
Induced currents
Electric current measurement
Current voltage characteristics
Conduction bands
p-n junctions
vapor phase epitaxy
accumulators
Electron beams
discontinuity

Keywords

  • A3. Metalorganic vapor phase epitaxy
  • B1. Nitrides
  • B3. Bipolar transistors

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors. / Kumakura, K.; Makimoto, Toshiki; Kobayashi, N.; Hashizume, T.; Fukui, T.; Hasegawa, H.

In: Journal of Crystal Growth, Vol. 298, No. SPEC. ISS, 01.2007, p. 787-790.

Research output: Contribution to journalArticle

Kumakura, K. ; Makimoto, Toshiki ; Kobayashi, N. ; Hashizume, T. ; Fukui, T. ; Hasegawa, H. / Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors. In: Journal of Crystal Growth. 2007 ; Vol. 298, No. SPEC. ISS. pp. 787-790.
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abstract = "We fabricated InGaN p-n junction diode structures on SiC substrates by metalorganic vapor phase epitaxy, and investigated the minority carrier diffusion length in n- and p-InGaN layers by electron beam induced current measurements. The minority electron diffusion length in p-InGaN was little affected by the In content in InGaN. The diffusion length decreased with increasing Mg-doping concentration. The minority hole diffusion length in n-InGaN was little affected by Si-doping concentration but slightly decreased with increasing In content in InGaN. We also fabricated pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors and investigated their common-emitter current-voltage characteristics. The Si-doping concentration in the base was 4×1019 cm-3. The maximum current gain was 21 at a collector current of -10 mA for an emitter size of 30 μm×50 μm. This good performance is ascribed to the large conduction band discontinuity between the AlGaN emitter and InGaN base.",
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T1 - Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors

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AU - Makimoto, Toshiki

AU - Kobayashi, N.

AU - Hashizume, T.

AU - Fukui, T.

AU - Hasegawa, H.

PY - 2007/1

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N2 - We fabricated InGaN p-n junction diode structures on SiC substrates by metalorganic vapor phase epitaxy, and investigated the minority carrier diffusion length in n- and p-InGaN layers by electron beam induced current measurements. The minority electron diffusion length in p-InGaN was little affected by the In content in InGaN. The diffusion length decreased with increasing Mg-doping concentration. The minority hole diffusion length in n-InGaN was little affected by Si-doping concentration but slightly decreased with increasing In content in InGaN. We also fabricated pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors and investigated their common-emitter current-voltage characteristics. The Si-doping concentration in the base was 4×1019 cm-3. The maximum current gain was 21 at a collector current of -10 mA for an emitter size of 30 μm×50 μm. This good performance is ascribed to the large conduction band discontinuity between the AlGaN emitter and InGaN base.

AB - We fabricated InGaN p-n junction diode structures on SiC substrates by metalorganic vapor phase epitaxy, and investigated the minority carrier diffusion length in n- and p-InGaN layers by electron beam induced current measurements. The minority electron diffusion length in p-InGaN was little affected by the In content in InGaN. The diffusion length decreased with increasing Mg-doping concentration. The minority hole diffusion length in n-InGaN was little affected by Si-doping concentration but slightly decreased with increasing In content in InGaN. We also fabricated pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors and investigated their common-emitter current-voltage characteristics. The Si-doping concentration in the base was 4×1019 cm-3. The maximum current gain was 21 at a collector current of -10 mA for an emitter size of 30 μm×50 μm. This good performance is ascribed to the large conduction band discontinuity between the AlGaN emitter and InGaN base.

KW - A3. Metalorganic vapor phase epitaxy

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KW - B3. Bipolar transistors

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