Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors

K. Kumakura*, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, H. Hasegawa

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

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