Misfit stress relaxation mechanism in GeO2/Ge systems: A classical molecular simulation study

T. Watanabe, T. Onda, I. Ohdomari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

The stress relaxation mechanism at the GeO2/Ge interface is studied by means of classical molecular simulation employing empirical force-fields. In general, the chemistry in GeO2 is characterized by weaker bonds and softer bond angles than that in SiO2, which has been considered to lead to the relaxation of the GeO2 film on Ge substrate. However, Ge-O-Ge angle is suffer than Si-O-Si angle, and has a narrower equilibrium angle of 133° than that of Si-O-Si of 144°. The present simulation results show that the narrow Ge-O-Ge bond contribute the reduction of the compressive stress in the GeO2 films. If the Ge-O-Ge bond angle had the same equilibrium angle with Si-O-Si angle, a higher residual stress would remain in the GeO2 films.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
Pages901-912
Number of pages12
Edition6
DOIs
Publication statusPublished - 2010 Dec 1
Event4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 102010 Oct 15

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/10/15

ASJC Scopus subject areas

  • Engineering(all)

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    Watanabe, T., Onda, T., & Ohdomari, I. (2010). Misfit stress relaxation mechanism in GeO2/Ge systems: A classical molecular simulation study. In SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices (6 ed., pp. 901-912). (ECS Transactions; Vol. 33, No. 6). https://doi.org/10.1149/1.3487621