Misfit stress relaxation mechanism in GeO2/Ge systems: A classical molecular simulation study

Takanobu Watanabe, T. Onda, I. Ohdomari

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    8 Citations (Scopus)

    Abstract

    The stress relaxation mechanism at the GeO2/Ge interface is studied by means of classical molecular simulation employing empirical force-fields. In general, the chemistry in GeO2 is characterized by weaker bonds and softer bond angles than that in SiO2, which has been considered to lead to the relaxation of the GeO2 film on Ge substrate. However, Ge-O-Ge angle is suffer than Si-O-Si angle, and has a narrower equilibrium angle of 133° than that of Si-O-Si of 144°. The present simulation results show that the narrow Ge-O-Ge bond contribute the reduction of the compressive stress in the GeO2 films. If the Ge-O-Ge bond angle had the same equilibrium angle with Si-O-Si angle, a higher residual stress would remain in the GeO2 films.

    Original languageEnglish
    Title of host publicationECS Transactions
    Pages901-912
    Number of pages12
    Volume33
    Edition6
    DOIs
    Publication statusPublished - 2010
    Event4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV
    Duration: 2010 Oct 102010 Oct 15

    Other

    Other4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
    CityLas Vegas, NV
    Period10/10/1010/10/15

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    ASJC Scopus subject areas

    • Engineering(all)

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