MOBILITY DEGRADATION OF NITRIDED OXIDE MISFET'S.

Takahisa Kusaka, Atsushi Hiraiwa, Kiichiro Mukai

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22 Citations (Scopus)

Abstract

The electrical characteristics of nitrided oxide MISFET's are studied. Channel electron mobility in nitrided oxide is almost half that in oxide. Mobility degradation is analyzed and positive charges are seen to be generated in the initial nitridation step. Negative charges are generated by further nitridation. A strong relationship exists between these charges and mobility degradation. It is therefore thought that mobility degradation is caused by coulomb scattering of positive and negative charges in nitrided oxide.

Original languageEnglish
Pages (from-to)166-172
Number of pages7
JournalJournal of the Electrochemical Society
Volume135
Issue number1
Publication statusPublished - 1988 Jan
Externally publishedYes

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ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Kusaka, T., Hiraiwa, A., & Mukai, K. (1988). MOBILITY DEGRADATION OF NITRIDED OXIDE MISFET'S. Journal of the Electrochemical Society, 135(1), 166-172.