Abstract
The electrical characteristics of nitrided oxide MISFET's are studied. Channel electron mobility in nitrided oxide is almost half that in oxide. Mobility degradation is analyzed and positive charges are seen to be generated in the initial nitridation step. Negative charges are generated by further nitridation. A strong relationship exists between these charges and mobility degradation. It is therefore thought that mobility degradation is caused by coulomb scattering of positive and negative charges in nitrided oxide.
| Original language | English |
|---|---|
| Pages (from-to) | 166-172 |
| Number of pages | 7 |
| Journal | Journal of the Electrochemical Society |
| Volume | 135 |
| Issue number | 1 |
| Publication status | Published - 1988 Jan |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrochemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
Kusaka, T., Hiraiwa, A., & Mukai, K. (1988). MOBILITY DEGRADATION OF NITRIDED OXIDE MISFET'S. Journal of the Electrochemical Society, 135(1), 166-172.