Modeling of Random Telegraph Noise under circuit operation Simulation and measurement of RTN-induced delay fluctuation

Kyosuke Ito*, Takashi Matsumoto, Shinichi Nishizawa, Hiroki Sunagawa, Kazutoshi Kobayashi, Hidetoshi Onodera

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Citations (Scopus)

Abstract

This paper presents a new model for the statistical analysis of the impact of Random Telegraph Noise (RTN) on circuit delay. This RTN-aware delay model have been developed using Pseudo RTN based on a Markov process with RTN statistical property. We have also measured RTN-induced delay fluctuation using a circuit matrix array fabricated in a 65nm process. Measured results include frequency fluctuations that have power spectrum density of 1/f2 property, which clearly indicates the effect of RTN-induced delay fluctuations. From the comparison of the maximum frequency shifts obtained by measurements and simulations, the Vgs-dependency of RTN-induced Vth attenuates the RTN impact on delay around by half.

Original languageEnglish
Title of host publicationProceedings of the 12th International Symposium on Quality Electronic Design, ISQED 2011
Pages22-27
Number of pages6
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event12th International Symposium on Quality Electronic Design, ISQED 2011 - Santa Clara, CA, United States
Duration: 2011 Mar 142011 Mar 16

Publication series

NameProceedings of the 12th International Symposium on Quality Electronic Design, ISQED 2011

Conference

Conference12th International Symposium on Quality Electronic Design, ISQED 2011
Country/TerritoryUnited States
CitySanta Clara, CA
Period11/3/1411/3/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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