Modeling, simulation, fabrication, and characterization of a 10-μ W/cm2 class si-nanowire thermoelectric generator for IoT applications

Motohiro Tomita; Shunsuke Oba; Yuya Himeda; Ryo Yamato; Keisuke Shima; Takehiro Kumada; Mao Xu; Hiroki Takezawa; Kohhei Mesaki; Kazuaki Tsuda; Shuichiro Hashimoto; Tianzhuo Zhan; Hui Zhang; Yoshinari Kamakura; Yuhhei Suzuki; Hiroshi Inokawa; Hiroya Ikeda; Takashi Matsukawa; Takeo Matsuki; Takanobu Watanabe

doi:10.1109/TED.2018.2867845

Modeling, simulation, fabrication, and characterization of a 10-μ W/cm² class si-nanowire thermoelectric generator for IoT applications

Motohiro Tomita, Shunsuke Oba, Yuya Himeda, Ryo Yamato, Keisuke Shima, Takehiro Kumada, Mao Xu, Hiroki Takezawa, Kohhei Mesaki, Kazuaki Tsuda, Shuichiro Hashimoto, Tianzhuo Zhan, Hui Zhang, Yoshinari Kamakura, Yuhhei Suzuki, Hiroshi Inokawa, Hiroya Ikeda, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe

Research output: Contribution to journal › Article

16 Citations (Scopus)

Abstract

We propose a planar device architecture compatible with the CMOS process technology as the optimal current benchmark of a Si-nanowire (NW) thermoelectric (TE) power generator. The proposed device is driven by a temperature gradient that is formed in the proximity of a perpendicular heat flow to the substrate. Therefore, unlike the conventional TE generators, the planar short Si-NWs need not be suspended on a cavity structure. Under an externally applied temperature difference of 5 K, the recorded TE power density is observed to be 12 μW/cm² by shortening the Si-NWs length and suppressing the parasitic thermal resistance of the Si substrate. The demonstration paves a pathway to develop cost-effective autonomous internet-of-things applications that utilize the environmental and body heats.

Original language	English
Article number	8467534
Pages (from-to)	5180-5188
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	11
DOIs	https://doi.org/10.1109/TED.2018.2867845
Publication status	Published - 2018 Nov

Keywords

CMOS process
Si nanowire (NW)
energy harvesting
scalability
thermoelectric (TE) generator

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2018.2867845

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Tomita, M., Oba, S., Himeda, Y., Yamato, R., Shima, K., Kumada, T., Xu, M., Takezawa, H., Mesaki, K., Tsuda, K., Hashimoto, S., Zhan, T., Zhang, H., Kamakura, Y., Suzuki, Y., Inokawa, H., Ikeda, H., Matsukawa, T., Matsuki, T., & Watanabe, T. (2018). Modeling, simulation, fabrication, and characterization of a 10-μ W/cm² class si-nanowire thermoelectric generator for IoT applications. IEEE Transactions on Electron Devices, 65(11), 5180-5188. [8467534]. https://doi.org/10.1109/TED.2018.2867845

Modeling, simulation, fabrication, and characterization of a 10-μ W/cm² class si-nanowire thermoelectric generator for IoT applications. / Tomita, Motohiro; Oba, Shunsuke; Himeda, Yuya; Yamato, Ryo; Shima, Keisuke; Kumada, Takehiro; Xu, Mao; Takezawa, Hiroki; Mesaki, Kohhei; Tsuda, Kazuaki; Hashimoto, Shuichiro; Zhan, Tianzhuo; Zhang, Hui; Kamakura, Yoshinari; Suzuki, Yuhhei; Inokawa, Hiroshi; Ikeda, Hiroya; Matsukawa, Takashi; Matsuki, Takeo; Watanabe, Takanobu.

In: IEEE Transactions on Electron Devices, Vol. 65, No. 11, 8467534, 11.2018, p. 5180-5188.

Research output: Contribution to journal › Article

Tomita, M, Oba, S, Himeda, Y, Yamato, R, Shima, K, Kumada, T, Xu, M, Takezawa, H, Mesaki, K, Tsuda, K, Hashimoto, S, Zhan, T, Zhang, H, Kamakura, Y, Suzuki, Y, Inokawa, H, Ikeda, H, Matsukawa, T, Matsuki, T & Watanabe, T 2018, 'Modeling, simulation, fabrication, and characterization of a 10-μ W/cm² class si-nanowire thermoelectric generator for IoT applications', IEEE Transactions on Electron Devices, vol. 65, no. 11, 8467534, pp. 5180-5188. https://doi.org/10.1109/TED.2018.2867845

Tomita, Motohiro ; Oba, Shunsuke ; Himeda, Yuya ; Yamato, Ryo ; Shima, Keisuke ; Kumada, Takehiro ; Xu, Mao ; Takezawa, Hiroki ; Mesaki, Kohhei ; Tsuda, Kazuaki ; Hashimoto, Shuichiro ; Zhan, Tianzhuo ; Zhang, Hui ; Kamakura, Yoshinari ; Suzuki, Yuhhei ; Inokawa, Hiroshi ; Ikeda, Hiroya ; Matsukawa, Takashi ; Matsuki, Takeo ; Watanabe, Takanobu. / Modeling, simulation, fabrication, and characterization of a 10-μ W/cm² class si-nanowire thermoelectric generator for IoT applications. In: IEEE Transactions on Electron Devices. 2018 ; Vol. 65, No. 11. pp. 5180-5188.

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AB - We propose a planar device architecture compatible with the CMOS process technology as the optimal current benchmark of a Si-nanowire (NW) thermoelectric (TE) power generator. The proposed device is driven by a temperature gradient that is formed in the proximity of a perpendicular heat flow to the substrate. Therefore, unlike the conventional TE generators, the planar short Si-NWs need not be suspended on a cavity structure. Under an externally applied temperature difference of 5 K, the recorded TE power density is observed to be 12 μW/cm2 by shortening the Si-NWs length and suppressing the parasitic thermal resistance of the Si substrate. The demonstration paves a pathway to develop cost-effective autonomous internet-of-things applications that utilize the environmental and body heats.

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