@article{b6dd2a1c8bfb4eba96417408502f3175,
title = "Modeling, simulation, fabrication, and characterization of a 10-μ W/cm2 class si-nanowire thermoelectric generator for IoT applications",
abstract = "We propose a planar device architecture compatible with the CMOS process technology as the optimal current benchmark of a Si-nanowire (NW) thermoelectric (TE) power generator. The proposed device is driven by a temperature gradient that is formed in the proximity of a perpendicular heat flow to the substrate. Therefore, unlike the conventional TE generators, the planar short Si-NWs need not be suspended on a cavity structure. Under an externally applied temperature difference of 5 K, the recorded TE power density is observed to be 12 μW/cm2 by shortening the Si-NWs length and suppressing the parasitic thermal resistance of the Si substrate. The demonstration paves a pathway to develop cost-effective autonomous internet-of-things applications that utilize the environmental and body heats.",
keywords = "CMOS process, Si nanowire (NW), energy harvesting, scalability, thermoelectric (TE) generator",
author = "Motohiro Tomita and Shunsuke Oba and Yuya Himeda and Ryo Yamato and Keisuke Shima and Takehiro Kumada and Mao Xu and Hiroki Takezawa and Kohhei Mesaki and Kazuaki Tsuda and Shuichiro Hashimoto and Tianzhuo Zhan and Hui Zhang and Yoshinari Kamakura and Yuhhei Suzuki and Hiroshi Inokawa and Hiroya Ikeda and Takashi Matsukawa and Takeo Matsuki and Takanobu Watanabe",
note = "Funding Information: Manuscript received June 30, 2018; revised August 17, 2018; accepted August 21, 2018. Date of publication September 18, 2018; date of current version October 22, 2018. This paper was originally presented in 2018 Symposium on VLSI Technology (Honolulu, Hawaii). This work was supported in part by JST-CREST under Grant JPMJCR15Q7, in part by NIMS Nanofabrication Platform, and in part by AIST-SCR. The review of this paper was arranged by Editor G. Ghione. (Corresponding author: Motohiro Tomita.) M. Tomita, S. Oba, Y. Himeda, R. Yamato, K. Shima, T. Kumada, M. Xu, H. Takezawa, K. Mesaki, K. Tsuda, S. Hashimoto, T. Zhan, and T. Watanabe are with the Faculty of Science and Engineering, Waseda University, Tokyo 169-8050, Japan (e-mail: tomita_motohiro@ watanabe.nano.waseda.ac.jp; watanabe-t@waseda.jp).",
year = "2018",
month = nov,
doi = "10.1109/TED.2018.2867845",
language = "English",
volume = "65",
pages = "5180--5188",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}