Modifying optical properties of InGaN quantum wells by a large piezoelectric polarization

H. Gotoh, T. Tawara, Y. Kobayashi, N. Kobayashi, Y. Yamauchi, T. Makimoto, T. Saitoh

Research output: Contribution to journalConference article

Abstract

Piezoelectric effects on PL properties are clarified in InGaN quantum wells (QWs) of 1-10 nm wide at 17 K. An extremely large change in PL peak energy (up to 200 meV) and PL decay time (two orders of magnitude) are found in a 10 nm-wide QW with increasing excitation intensity. We compare the distinctive characteristics of the field effects with QCSE in GaAs QWs and discuss possible optical device functions.

Original languageEnglish
Pages (from-to)1974-1977
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
Publication statusPublished - 2006 Jul 31
Externally publishedYes
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: 2005 Aug 282005 Sep 2

ASJC Scopus subject areas

  • Condensed Matter Physics

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