Modifying optical properties of InGaN quantum wells by a large piezoelectric polarization

H. Gotoh, T. Tawara, Y. Kobayashi, N. Kobayashi, Y. Yamauchi, Toshiki Makimoto, T. Saitoh

Research output: Contribution to journalArticle

Abstract

Piezoelectric effects on PL properties are clarified in InGaN quantum wells (QWs) of 1-10 nm wide at 17 K. An extremely large change in PL peak energy (up to 200 meV) and PL decay time (two orders of magnitude) are found in a 10 nm-wide QW with increasing excitation intensity. We compare the distinctive characteristics of the field effects with QCSE in GaAs QWs and discuss possible optical device functions.

Original languageEnglish
Pages (from-to)1974-1977
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
Publication statusPublished - 2006
Externally publishedYes

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quantum wells
optical properties
polarization
decay
excitation
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Modifying optical properties of InGaN quantum wells by a large piezoelectric polarization. / Gotoh, H.; Tawara, T.; Kobayashi, Y.; Kobayashi, N.; Yamauchi, Y.; Makimoto, Toshiki; Saitoh, T.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 3, 2006, p. 1974-1977.

Research output: Contribution to journalArticle

Gotoh, H. ; Tawara, T. ; Kobayashi, Y. ; Kobayashi, N. ; Yamauchi, Y. ; Makimoto, Toshiki ; Saitoh, T. / Modifying optical properties of InGaN quantum wells by a large piezoelectric polarization. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2006 ; Vol. 3. pp. 1974-1977.
@article{2880362de63c4aef88e0aef634b05737,
title = "Modifying optical properties of InGaN quantum wells by a large piezoelectric polarization",
abstract = "Piezoelectric effects on PL properties are clarified in InGaN quantum wells (QWs) of 1-10 nm wide at 17 K. An extremely large change in PL peak energy (up to 200 meV) and PL decay time (two orders of magnitude) are found in a 10 nm-wide QW with increasing excitation intensity. We compare the distinctive characteristics of the field effects with QCSE in GaAs QWs and discuss possible optical device functions.",
author = "H. Gotoh and T. Tawara and Y. Kobayashi and N. Kobayashi and Y. Yamauchi and Toshiki Makimoto and T. Saitoh",
year = "2006",
doi = "10.1002/pssc.200565166",
language = "English",
volume = "3",
pages = "1974--1977",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",

}

TY - JOUR

T1 - Modifying optical properties of InGaN quantum wells by a large piezoelectric polarization

AU - Gotoh, H.

AU - Tawara, T.

AU - Kobayashi, Y.

AU - Kobayashi, N.

AU - Yamauchi, Y.

AU - Makimoto, Toshiki

AU - Saitoh, T.

PY - 2006

Y1 - 2006

N2 - Piezoelectric effects on PL properties are clarified in InGaN quantum wells (QWs) of 1-10 nm wide at 17 K. An extremely large change in PL peak energy (up to 200 meV) and PL decay time (two orders of magnitude) are found in a 10 nm-wide QW with increasing excitation intensity. We compare the distinctive characteristics of the field effects with QCSE in GaAs QWs and discuss possible optical device functions.

AB - Piezoelectric effects on PL properties are clarified in InGaN quantum wells (QWs) of 1-10 nm wide at 17 K. An extremely large change in PL peak energy (up to 200 meV) and PL decay time (two orders of magnitude) are found in a 10 nm-wide QW with increasing excitation intensity. We compare the distinctive characteristics of the field effects with QCSE in GaAs QWs and discuss possible optical device functions.

UR - http://www.scopus.com/inward/record.url?scp=33746331044&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746331044&partnerID=8YFLogxK

U2 - 10.1002/pssc.200565166

DO - 10.1002/pssc.200565166

M3 - Article

AN - SCOPUS:33746331044

VL - 3

SP - 1974

EP - 1977

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

ER -