MODULATION DOPED n-AlGaAs/GaAs HETEROSTRUCTURES GROWN BY FLOW-RATE MODULATION EPITAXY.

Toshiki Makimoto, Naoki Kobayashi, Yoshiji Horikoshi

Research output: Chapter in Book/Report/Conference proceedingChapter

16 Citations (Scopus)

Abstract

Flow-rate Modulation Epitaxy was applied to grow GaAs, AlAs, AlGaAs layers and n-AlGAAs/GaAs modulation doped heterostructures. This method considerably reduced the growth temperature, and high-quality GaAs and AlAs layers were obtained at the growth temperature as low as 550 degree C. Al//xGa//1// minus //xAs alloy layers, where x equals n/(n plus m), were formed by repeating the growth of m-monolayers of GaAs followed by the growth of n-monolayers of AlAs. Thus, the Al//xGa//1// minus //xAs layers are no longer 'random alloys' but have 'ordered structures'. It was found that, in Flow-rate Modulation Epitaxy, the Si doping efficiency to Al//0//. //2//5Ga//0//. //7//5As is quite high, and is almost constant in the growth temperature range between 500 and 625 degree C. Using this method, we fabricated modulation doped n-AlGaAs/GaAs heterostructures.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 2: Letters
Pages513-515
Number of pages3
Volume25
Edition6
Publication statusPublished - 1986 Jun
Externally publishedYes

Fingerprint

Epitaxial growth
Heterojunctions
Growth temperature
Flow rate
Modulation
Monolayers
Doping (additives)

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Makimoto, T., Kobayashi, N., & Horikoshi, Y. (1986). MODULATION DOPED n-AlGaAs/GaAs HETEROSTRUCTURES GROWN BY FLOW-RATE MODULATION EPITAXY. In Japanese Journal of Applied Physics, Part 2: Letters (6 ed., Vol. 25, pp. 513-515)

MODULATION DOPED n-AlGaAs/GaAs HETEROSTRUCTURES GROWN BY FLOW-RATE MODULATION EPITAXY. / Makimoto, Toshiki; Kobayashi, Naoki; Horikoshi, Yoshiji.

Japanese Journal of Applied Physics, Part 2: Letters. Vol. 25 6. ed. 1986. p. 513-515.

Research output: Chapter in Book/Report/Conference proceedingChapter

Makimoto, T, Kobayashi, N & Horikoshi, Y 1986, MODULATION DOPED n-AlGaAs/GaAs HETEROSTRUCTURES GROWN BY FLOW-RATE MODULATION EPITAXY. in Japanese Journal of Applied Physics, Part 2: Letters. 6 edn, vol. 25, pp. 513-515.
Makimoto T, Kobayashi N, Horikoshi Y. MODULATION DOPED n-AlGaAs/GaAs HETEROSTRUCTURES GROWN BY FLOW-RATE MODULATION EPITAXY. In Japanese Journal of Applied Physics, Part 2: Letters. 6 ed. Vol. 25. 1986. p. 513-515
Makimoto, Toshiki ; Kobayashi, Naoki ; Horikoshi, Yoshiji. / MODULATION DOPED n-AlGaAs/GaAs HETEROSTRUCTURES GROWN BY FLOW-RATE MODULATION EPITAXY. Japanese Journal of Applied Physics, Part 2: Letters. Vol. 25 6. ed. 1986. pp. 513-515
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