Modulation doped n-AlGaAs/GaAs heterostructures grown by flow-rate modulation epitaxy

Toshiki Makimoto, Naoki Kobayashi, Yoshiji Horikoshi

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Flow-rate Modulation Epitaxy was applied to grow GaAs, AlAs, AlGaAs layers and n-AlGaAs/GaAs modulation doped heterostructures. This method considerably reduced the growth temperature, and high-quality GaAs and AlAs layers were obtained at the growth temperature as low as 550°C. AlxGa1-x As alloy layers, where x=n/(n + m), were formed by repeating the growth of m-monolayers of GaAs followed by the growth of n-monolayers of AlAs. Thus, the AlxGa1-xAs layers are no longer “random alloys” but have “ordered structures”. It was found that, in Flow-rate Modulation Epitaxy, the Si doping efficiency to Alo.25Gao.75As is quite high, and is almost constant in the growth temperature range between 500 and 625 °C. Using this method, we fabricated modulation doped n-AlGaAs/GaAs heterostructures. At the growth temperature of 550°C, the 2DEG mobility as high as 7 X 104cm2/Vs was obtained at 6 K.

Original languageEnglish
Pages (from-to)L513-L515
JournalJapanese journal of applied physics
Volume25
Issue number6
DOIs
Publication statusPublished - 1986 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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