MOLECULAR BEAM EPITAXIAL GROWTH OF GaAs.

S. Gonda, Yuichi Matsushima, Y. Makita, S. Mukai

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Molecular beam epitaxy of GaAs was tried using a high vacuum system with effusion cells and a quadrupole mass spectrometer, and the epitaxial process was studied in situ by high energy electron diffraction. Analysis of the quality of the GaAs film was made with a scanning electron microscope, an ion microprobe analyser and an ESCA photoelectron spectrometer. Photoluminescence measurements were made to investigate the radiative recombination characteristics of the GaAs film. It is found from these measurements that the GaAs film grown by molecular beam epitaxy has nearly the same quality as bulk crystals.

Original languageEnglish
Title of host publicationBull Electrotech Lab, Tokyo
Pages361-369
Number of pages9
Volume39
Edition5
Publication statusPublished - 1975
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Gonda, S., Matsushima, Y., Makita, Y., & Mukai, S. (1975). MOLECULAR BEAM EPITAXIAL GROWTH OF GaAs. In Bull Electrotech Lab, Tokyo (5 ed., Vol. 39, pp. 361-369)