Abstract
Epitaxial films of GaP and GaAs1-xPx were grown on (100)-oriented GaP substrates by molecular beam epitaxy. According to evaluation of crystallographic quality by RHEED and SEM, at the deposition rate of 15~30 A/min the deposited GaP and GaAs,_xPx were single crystalline at the substrate temperature, Ts, of 550≾Ts≾600≾ and 540≾Ts≾600 °, respectively. IMA and photoluminescence studies show the epitaxial films include few impurities and few defects. Composition ratio, x, of GaAsi-xPx is dependent both substrate temperature, Ts, and the intensity ratio of P to As molecules, and the rate of decrease of x with Ts,-dx/dTs, is 0.003°-1 for all the intensity ratio concerned (np/nAs = 2≾11). The sticking coefficient of P is found to vary inversely proportional to substrate temperature.
Original language | English |
---|---|
Pages (from-to) | 337-347 |
Number of pages | 11 |
Journal | Shinku/Journal of the Vacuum Society of Japan |
Volume | 19 |
Issue number | 10 |
DOIs | |
Publication status | Published - 1976 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering