Abstract
Epitaxial films of GaP and GaAs1-xPx were grown on (100)-oriented GaP substrates by molecular beam epitaxy. According to evaluation of crystallographic quality by RHEED and SEM, at the deposition rate of 15~30 A/min the deposited GaP and GaAs,_xPx were single crystalline at the substrate temperature, Ts, of 550≾Ts≾600≾ and 540≾Ts≾600 °, respectively. IMA and photoluminescence studies show the epitaxial films include few impurities and few defects. Composition ratio, x, of GaAsi-xPx is dependent both substrate temperature, Ts, and the intensity ratio of P to As molecules, and the rate of decrease of x with Ts,-dx/dTs, is 0.003°-1 for all the intensity ratio concerned (np/nAs = 2≾11). The sticking coefficient of P is found to vary inversely proportional to substrate temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 337-347 |
| Number of pages | 11 |
| Journal | Shinku/Journal of the Vacuum Society of Japan |
| Volume | 19 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1976 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cite this
Molecular Beam Epitaxial Growth of GaP and GaAs1-xPx. / Matsushima, Yuichi; Gonda, Shun ichi.
In: Shinku/Journal of the Vacuum Society of Japan, Vol. 19, No. 10, 1976, p. 337-347.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Molecular Beam Epitaxial Growth of GaP and GaAs1-xPx
AU - Matsushima, Yuichi
AU - Gonda, Shun ichi
PY - 1976
Y1 - 1976
N2 - Epitaxial films of GaP and GaAs1-xPx were grown on (100)-oriented GaP substrates by molecular beam epitaxy. According to evaluation of crystallographic quality by RHEED and SEM, at the deposition rate of 15~30 A/min the deposited GaP and GaAs,_xPx were single crystalline at the substrate temperature, Ts, of 550≾Ts≾600≾ and 540≾Ts≾600 °, respectively. IMA and photoluminescence studies show the epitaxial films include few impurities and few defects. Composition ratio, x, of GaAsi-xPx is dependent both substrate temperature, Ts, and the intensity ratio of P to As molecules, and the rate of decrease of x with Ts,-dx/dTs, is 0.003°-1 for all the intensity ratio concerned (np/nAs = 2≾11). The sticking coefficient of P is found to vary inversely proportional to substrate temperature.
AB - Epitaxial films of GaP and GaAs1-xPx were grown on (100)-oriented GaP substrates by molecular beam epitaxy. According to evaluation of crystallographic quality by RHEED and SEM, at the deposition rate of 15~30 A/min the deposited GaP and GaAs,_xPx were single crystalline at the substrate temperature, Ts, of 550≾Ts≾600≾ and 540≾Ts≾600 °, respectively. IMA and photoluminescence studies show the epitaxial films include few impurities and few defects. Composition ratio, x, of GaAsi-xPx is dependent both substrate temperature, Ts, and the intensity ratio of P to As molecules, and the rate of decrease of x with Ts,-dx/dTs, is 0.003°-1 for all the intensity ratio concerned (np/nAs = 2≾11). The sticking coefficient of P is found to vary inversely proportional to substrate temperature.
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U2 - 10.3131/jvsj.19.337
DO - 10.3131/jvsj.19.337
M3 - Article
AN - SCOPUS:85007713236
VL - 19
SP - 337
EP - 347
JO - Journal of the Vacuum Society of Japan
JF - Journal of the Vacuum Society of Japan
SN - 1882-2398
IS - 10
ER -