Molecular Beam Epitaxial Growth of GaP and GaAs1-xPx

Yuichi Matsushima, Shun ichi Gonda

Research output: Contribution to journalArticle

Abstract

Epitaxial films of GaP and GaAs1-xPx were grown on (100)-oriented GaP substrates by molecular beam epitaxy. According to evaluation of crystallographic quality by RHEED and SEM, at the deposition rate of 15~30 A/min the deposited GaP and GaAs,_xPx were single crystalline at the substrate temperature, Ts, of 550≾Ts≾600≾ and 540≾Ts≾600 °, respectively. IMA and photoluminescence studies show the epitaxial films include few impurities and few defects. Composition ratio, x, of GaAsi-xPx is dependent both substrate temperature, Ts, and the intensity ratio of P to As molecules, and the rate of decrease of x with Ts,-dx/dTs, is 0.003°-1 for all the intensity ratio concerned (np/nAs = 2≾11). The sticking coefficient of P is found to vary inversely proportional to substrate temperature.

Original languageEnglish
Pages (from-to)337-347
Number of pages11
JournalShinku/Journal of the Vacuum Society of Japan
Volume19
Issue number10
DOIs
Publication statusPublished - 1976
Externally publishedYes

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Molecular beams
Epitaxial growth
molecular beams
Epitaxial films
Substrates
Reflection high energy electron diffraction
Deposition rates
Molecular beam epitaxy
Temperature
temperature
Photoluminescence
molecular beam epitaxy
Impurities
Crystalline materials
photoluminescence
impurities
Defects
Scanning electron microscopy
scanning electron microscopy
Molecules

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Molecular Beam Epitaxial Growth of GaP and GaAs1-xPx. / Matsushima, Yuichi; Gonda, Shun ichi.

In: Shinku/Journal of the Vacuum Society of Japan, Vol. 19, No. 10, 1976, p. 337-347.

Research output: Contribution to journalArticle

Matsushima, Yuichi ; Gonda, Shun ichi. / Molecular Beam Epitaxial Growth of GaP and GaAs1-xPx. In: Shinku/Journal of the Vacuum Society of Japan. 1976 ; Vol. 19, No. 10. pp. 337-347.
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