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Molecular Beam Epitaxial Growth of GaP and GaAs1-xPx
Yuichi Matsushima, Shun ichi Gonda
Research output
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Article
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peer-review
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Engineering & Materials Science
Molecular beams
100%
Epitaxial growth
78%
Epitaxial films
42%
Substrates
39%
Reflection high energy electron diffraction
28%
Photoluminescence
22%
Molecular beam epitaxy
21%
Deposition rates
17%
Temperature
16%
Crystalline materials
14%
Molecules
13%
Impurities
13%
Scanning electron microscopy
11%
Defects
9%
Chemical analysis
9%
Chemical Compounds
Epitaxial Film
79%
Molecular Beam
67%
Molecular Beam Epitaxy
40%
Photoluminescence
21%
Molecule
9%
Physics & Astronomy
molecular beams
57%
temperature
12%
molecular beam epitaxy
11%
photoluminescence
9%
impurities
9%
scanning electron microscopy
9%
evaluation
8%
defects
7%
coefficients
7%
molecules
7%