MOLECULAR BEAM EPITAXIAL GROWTH OF InAs.

Mitsuaki Yano, Masaharu Nogami, Yuichi Matsushima, Morihiko Kimata

    Research output: Chapter in Book/Report/Conference proceedingChapter

    38 Citations (Scopus)

    Abstract

    Thin crystalline films of InAs have been heteroepitaxially grown on (100) surface of GaAs by molecular beam epitaxy. The films are evaluated by optical microscope, SEM, RHEED and electrical measurements. In spite of the existence of a large lattice mismatch between InAs and GaAs, specular InAs films are obtained. Undoped InAs films show the n-type conduction, and their electron concentrations and mobilities are varied depending on the substrate temperature (T//s) during growth. At T//s equals 480 C, single crystalline films with high crystallographic quality and flat surfaces are grown. Furthermore, Mg atoms are successfully doped into InAs during the MBE growth to obtain p-type films.

    Original languageEnglish
    Title of host publicationJpn J Appl Phys
    Pages2131-2137
    Number of pages7
    Volume16
    Edition12
    Publication statusPublished - 1977 Dec

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    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Yano, M., Nogami, M., Matsushima, Y., & Kimata, M. (1977). MOLECULAR BEAM EPITAXIAL GROWTH OF InAs. In Jpn J Appl Phys (12 ed., Vol. 16, pp. 2131-2137)