MOLECULAR BEAM EPITAXIAL GROWTH OF InP.

Yuichi Matsushima, Yuichi Hirofuji, Shun ichi Gonda, Seiji Mukai, Morihiko Kimata

Research output: Chapter in Book/Report/Conference proceedingChapter

9 Citations (Scopus)

Abstract

InP thin crystalline films were grown on (100)-oriented GaAs by molecular beam epitaxy (MBE) and evaluated by RHEED, SEM and IMA. Thin films with high crystalline quality were obtained when the substrate temperature was about 240 degree C and temperatures of In and P cells were 840 similar 880 degree C and 370 similar 400 degree C, respectively. Sn atoms were easily doped into InP during MBE growth, and the surface morphology of InP was greatly improved by Sn doping.

Original languageEnglish
Title of host publicationJpn J Appl Phys
Pages2321-2325
Number of pages5
Volume15
Edition12
Publication statusPublished - 1976 Dec
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Matsushima, Y., Hirofuji, Y., Gonda, S. I., Mukai, S., & Kimata, M. (1976). MOLECULAR BEAM EPITAXIAL GROWTH OF InP. In Jpn J Appl Phys (12 ed., Vol. 15, pp. 2321-2325)