Abstract
Epitaxial growth of InP single crystal thin films on 100-direction-oriented GaAs was tried using the molecular beam deposition method. Stoichiometric InP films have been successfully grown at the growth rate of 50 or 100 A/min and at the substrate temperature T, of 200 similar 300 degree C under the condition of sufficient supply of P//2 beams. In particular, InP films growth at T//s congruent 240 degree C were evaluated to be the best by reflection high energy electron diffraction, scanning electron microscopy and electrical measurements. Epitaxial surfaces prepared by this method were several hundred times as smooth as those grown by liquid-phase or vapor-phase epitaxy, and by doping Sn into the InP films during molecular-beam epitaxy the surface morphology was greatly improved.
| Original language | English |
|---|---|
| Title of host publication | Bull Electrotech Lab Tokyo |
| Pages | 709-717 |
| Number of pages | 9 |
| Volume | 40 |
| Edition | 8 |
| Publication status | Published - 1976 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
MOLECULAR BEAM EPITAXIAL GROWTH OF InP. / Gonda, Sunichi; Hirofuji, Yuichi; Matsushima, Yuichi; Mukai, Seiji.
Bull Electrotech Lab Tokyo. Vol. 40 8. ed. 1976. p. 709-717.Research output: Chapter in Book/Report/Conference proceeding › Chapter
}
TY - CHAP
T1 - MOLECULAR BEAM EPITAXIAL GROWTH OF InP.
AU - Gonda, Sunichi
AU - Hirofuji, Yuichi
AU - Matsushima, Yuichi
AU - Mukai, Seiji
PY - 1976
Y1 - 1976
N2 - Epitaxial growth of InP single crystal thin films on 100-direction-oriented GaAs was tried using the molecular beam deposition method. Stoichiometric InP films have been successfully grown at the growth rate of 50 or 100 A/min and at the substrate temperature T, of 200 similar 300 degree C under the condition of sufficient supply of P//2 beams. In particular, InP films growth at T//s congruent 240 degree C were evaluated to be the best by reflection high energy electron diffraction, scanning electron microscopy and electrical measurements. Epitaxial surfaces prepared by this method were several hundred times as smooth as those grown by liquid-phase or vapor-phase epitaxy, and by doping Sn into the InP films during molecular-beam epitaxy the surface morphology was greatly improved.
AB - Epitaxial growth of InP single crystal thin films on 100-direction-oriented GaAs was tried using the molecular beam deposition method. Stoichiometric InP films have been successfully grown at the growth rate of 50 or 100 A/min and at the substrate temperature T, of 200 similar 300 degree C under the condition of sufficient supply of P//2 beams. In particular, InP films growth at T//s congruent 240 degree C were evaluated to be the best by reflection high energy electron diffraction, scanning electron microscopy and electrical measurements. Epitaxial surfaces prepared by this method were several hundred times as smooth as those grown by liquid-phase or vapor-phase epitaxy, and by doping Sn into the InP films during molecular-beam epitaxy the surface morphology was greatly improved.
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M3 - Chapter
AN - SCOPUS:0017138869
VL - 40
SP - 709
EP - 717
BT - Bull Electrotech Lab Tokyo
ER -