MOLECULAR BEAM EPITAXIAL GROWTH OF InP.

Sunichi Gonda; Yuichi Hirofuji; Yuichi Matsushima; Seiji Mukai

MOLECULAR BEAM EPITAXIAL GROWTH OF InP.

Sunichi Gonda, Yuichi Hirofuji, Yuichi Matsushima, Seiji Mukai

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Epitaxial growth of InP single crystal thin films on 100-direction-oriented GaAs was tried using the molecular beam deposition method. Stoichiometric InP films have been successfully grown at the growth rate of 50 or 100 A/min and at the substrate temperature T, of 200 similar 300 degree C under the condition of sufficient supply of P//2 beams. In particular, InP films growth at T//s congruent 240 degree C were evaluated to be the best by reflection high energy electron diffraction, scanning electron microscopy and electrical measurements. Epitaxial surfaces prepared by this method were several hundred times as smooth as those grown by liquid-phase or vapor-phase epitaxy, and by doping Sn into the InP films during molecular-beam epitaxy the surface morphology was greatly improved.

Original language	English
Title of host publication	Bull Electrotech Lab Tokyo
Pages	709-717
Number of pages	9
Volume	40
Edition	8
Publication status	Published - 1976
Externally published	Yes

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Gonda, S., Hirofuji, Y., Matsushima, Y., & Mukai, S. (1976). MOLECULAR BEAM EPITAXIAL GROWTH OF InP. In Bull Electrotech Lab Tokyo (8 ed., Vol. 40, pp. 709-717)

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abstract = "Epitaxial growth of InP single crystal thin films on 100-direction-oriented GaAs was tried using the molecular beam deposition method. Stoichiometric InP films have been successfully grown at the growth rate of 50 or 100 A/min and at the substrate temperature T, of 200 similar 300 degree C under the condition of sufficient supply of P//2 beams. In particular, InP films growth at T//s congruent 240 degree C were evaluated to be the best by reflection high energy electron diffraction, scanning electron microscopy and electrical measurements. Epitaxial surfaces prepared by this method were several hundred times as smooth as those grown by liquid-phase or vapor-phase epitaxy, and by doping Sn into the InP films during molecular-beam epitaxy the surface morphology was greatly improved.",

author = "Sunichi Gonda and Yuichi Hirofuji and Yuichi Matsushima and Seiji Mukai",

year = "1976",

language = "English",

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TY - CHAP

T1 - MOLECULAR BEAM EPITAXIAL GROWTH OF InP.

AU - Gonda, Sunichi

AU - Hirofuji, Yuichi

AU - Matsushima, Yuichi

AU - Mukai, Seiji

PY - 1976

Y1 - 1976

N2 - Epitaxial growth of InP single crystal thin films on 100-direction-oriented GaAs was tried using the molecular beam deposition method. Stoichiometric InP films have been successfully grown at the growth rate of 50 or 100 A/min and at the substrate temperature T, of 200 similar 300 degree C under the condition of sufficient supply of P//2 beams. In particular, InP films growth at T//s congruent 240 degree C were evaluated to be the best by reflection high energy electron diffraction, scanning electron microscopy and electrical measurements. Epitaxial surfaces prepared by this method were several hundred times as smooth as those grown by liquid-phase or vapor-phase epitaxy, and by doping Sn into the InP films during molecular-beam epitaxy the surface morphology was greatly improved.

AB - Epitaxial growth of InP single crystal thin films on 100-direction-oriented GaAs was tried using the molecular beam deposition method. Stoichiometric InP films have been successfully grown at the growth rate of 50 or 100 A/min and at the substrate temperature T, of 200 similar 300 degree C under the condition of sufficient supply of P//2 beams. In particular, InP films growth at T//s congruent 240 degree C were evaluated to be the best by reflection high energy electron diffraction, scanning electron microscopy and electrical measurements. Epitaxial surfaces prepared by this method were several hundred times as smooth as those grown by liquid-phase or vapor-phase epitaxy, and by doping Sn into the InP films during molecular-beam epitaxy the surface morphology was greatly improved.

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M3 - Chapter

AN - SCOPUS:0017138869

VL - 40

SP - 709

EP - 717

BT - Bull Electrotech Lab Tokyo

ER -

MOLECULAR BEAM EPITAXIAL GROWTH OF InP.

Abstract

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