Molecular-beam epitaxial growth of ZnMgCdS layers and their application to UV-A photodetectors

Masaaki Enami; Kazuaki Tsutsumi; Fumiaki Hirose; Shohei Katsuta; Masakazu Kobayashi

Molecular-beam epitaxial growth of ZnMgCdS layers and their application to UV-A photodetectors

Masaaki Enami^*, Kazuaki Tsutsumi, Fumiaki Hirose, Shohei Katsuta, Masakazu Kobayashi

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Letter › peer-review

9 Citations (Scopus)

Abstract

Zincblende ZnMgCdS quaternary alloy layers were grown by molecular-beam epitaxy. The ZnMgCdS alloy lattice matched with GaAs and exhibited the band-gap energy of approximately 3 eV. Zn, Mg, and CdS were used as source materials. Cd was replaced by Zn or Mg, and the alloy composition was controlled when the growth temperature was set to approximately 210°C. Low-temperature photoluminescence showed dominant band-edge features indicating the high quality of the epilayer. The epilayer was applied to the metal-semiconductor-metal photodetector, and visible-blind UV sensing characteristics were observed.

Original language	English
Pages (from-to)	L1047-L1049
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	42
Issue number	9 AB
Publication status	Published - 2003 Sep 15

Keywords

Molecular beam epitaxy
Photoluminescence
Spectral response
UV-A detector
ZnMgCdS

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

Cite this

@article{7f37e1d92d2142a4b0820fb627f5b998,

title = "Molecular-beam epitaxial growth of ZnMgCdS layers and their application to UV-A photodetectors",

abstract = "Zincblende ZnMgCdS quaternary alloy layers were grown by molecular-beam epitaxy. The ZnMgCdS alloy lattice matched with GaAs and exhibited the band-gap energy of approximately 3 eV. Zn, Mg, and CdS were used as source materials. Cd was replaced by Zn or Mg, and the alloy composition was controlled when the growth temperature was set to approximately 210°C. Low-temperature photoluminescence showed dominant band-edge features indicating the high quality of the epilayer. The epilayer was applied to the metal-semiconductor-metal photodetector, and visible-blind UV sensing characteristics were observed.",

keywords = "Molecular beam epitaxy, Photoluminescence, Spectral response, UV-A detector, ZnMgCdS",

author = "Masaaki Enami and Kazuaki Tsutsumi and Fumiaki Hirose and Shohei Katsuta and Masakazu Kobayashi",

year = "2003",

month = sep,

day = "15",

language = "English",

volume = "42",

pages = "L1047--L1049",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "9 AB",

}

TY - JOUR

T1 - Molecular-beam epitaxial growth of ZnMgCdS layers and their application to UV-A photodetectors

AU - Enami, Masaaki

AU - Tsutsumi, Kazuaki

AU - Hirose, Fumiaki

AU - Katsuta, Shohei

AU - Kobayashi, Masakazu

PY - 2003/9/15

Y1 - 2003/9/15

N2 - Zincblende ZnMgCdS quaternary alloy layers were grown by molecular-beam epitaxy. The ZnMgCdS alloy lattice matched with GaAs and exhibited the band-gap energy of approximately 3 eV. Zn, Mg, and CdS were used as source materials. Cd was replaced by Zn or Mg, and the alloy composition was controlled when the growth temperature was set to approximately 210°C. Low-temperature photoluminescence showed dominant band-edge features indicating the high quality of the epilayer. The epilayer was applied to the metal-semiconductor-metal photodetector, and visible-blind UV sensing characteristics were observed.

AB - Zincblende ZnMgCdS quaternary alloy layers were grown by molecular-beam epitaxy. The ZnMgCdS alloy lattice matched with GaAs and exhibited the band-gap energy of approximately 3 eV. Zn, Mg, and CdS were used as source materials. Cd was replaced by Zn or Mg, and the alloy composition was controlled when the growth temperature was set to approximately 210°C. Low-temperature photoluminescence showed dominant band-edge features indicating the high quality of the epilayer. The epilayer was applied to the metal-semiconductor-metal photodetector, and visible-blind UV sensing characteristics were observed.

KW - Molecular beam epitaxy

KW - Photoluminescence

KW - Spectral response

KW - UV-A detector

KW - ZnMgCdS

UR - http://www.scopus.com/inward/record.url?scp=0345356556&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0345356556&partnerID=8YFLogxK

M3 - Letter

AN - SCOPUS:0345356556

VL - 42

SP - L1047-L1049

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 AB

ER -

Molecular-beam epitaxial growth of ZnMgCdS layers and their application to UV-A photodetectors

Abstract

Keywords

ASJC Scopus subject areas

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