Abstract
Zincblende ZnMgCdS quaternary alloy layers were grown by molecular-beam epitaxy. The ZnMgCdS alloy lattice matched with GaAs and exhibited the band-gap energy of approximately 3 eV. Zn, Mg, and CdS were used as source materials. Cd was replaced by Zn or Mg, and the alloy composition was controlled when the growth temperature was set to approximately 210°C. Low-temperature photoluminescence showed dominant band-edge features indicating the high quality of the epilayer. The epilayer was applied to the metal-semiconductor-metal photodetector, and visible-blind UV sensing characteristics were observed.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 42 |
| Issue number | 9 AB |
| Publication status | Published - 2003 Sep 15 |
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Keywords
- Molecular beam epitaxy
- Photoluminescence
- Spectral response
- UV-A detector
- ZnMgCdS
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Molecular-beam epitaxial growth of ZnMgCdS layers and their application to UV-A photodetectors. / Enami, Masaaki; Tsutsumi, Kazuaki; Hirose, Fumiaki; Katsuta, Shohei; Kobayashi, Masakazu.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 42, No. 9 AB, 15.09.2003.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Molecular-beam epitaxial growth of ZnMgCdS layers and their application to UV-A photodetectors
AU - Enami, Masaaki
AU - Tsutsumi, Kazuaki
AU - Hirose, Fumiaki
AU - Katsuta, Shohei
AU - Kobayashi, Masakazu
PY - 2003/9/15
Y1 - 2003/9/15
N2 - Zincblende ZnMgCdS quaternary alloy layers were grown by molecular-beam epitaxy. The ZnMgCdS alloy lattice matched with GaAs and exhibited the band-gap energy of approximately 3 eV. Zn, Mg, and CdS were used as source materials. Cd was replaced by Zn or Mg, and the alloy composition was controlled when the growth temperature was set to approximately 210°C. Low-temperature photoluminescence showed dominant band-edge features indicating the high quality of the epilayer. The epilayer was applied to the metal-semiconductor-metal photodetector, and visible-blind UV sensing characteristics were observed.
AB - Zincblende ZnMgCdS quaternary alloy layers were grown by molecular-beam epitaxy. The ZnMgCdS alloy lattice matched with GaAs and exhibited the band-gap energy of approximately 3 eV. Zn, Mg, and CdS were used as source materials. Cd was replaced by Zn or Mg, and the alloy composition was controlled when the growth temperature was set to approximately 210°C. Low-temperature photoluminescence showed dominant band-edge features indicating the high quality of the epilayer. The epilayer was applied to the metal-semiconductor-metal photodetector, and visible-blind UV sensing characteristics were observed.
KW - Molecular beam epitaxy
KW - Photoluminescence
KW - Spectral response
KW - UV-A detector
KW - ZnMgCdS
UR - http://www.scopus.com/inward/record.url?scp=0345356556&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0345356556&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0345356556
VL - 42
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9 AB
ER -