Abstract
Zincblende ZnMgCdS quaternary alloy layers were grown by molecular-beam epitaxy. The ZnMgCdS alloy lattice matched with GaAs and exhibited the band-gap energy of approximately 3 eV. Zn, Mg, and CdS were used as source materials. Cd was replaced by Zn or Mg, and the alloy composition was controlled when the growth temperature was set to approximately 210°C. Low-temperature photoluminescence showed dominant band-edge features indicating the high quality of the epilayer. The epilayer was applied to the metal-semiconductor-metal photodetector, and visible-blind UV sensing characteristics were observed.
| Original language | English |
|---|---|
| Pages (from-to) | L1047-L1049 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 42 |
| Issue number | 9 AB |
| Publication status | Published - 2003 Sep 15 |
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Keywords
- Molecular beam epitaxy
- Photoluminescence
- Spectral response
- UV-A detector
- ZnMgCdS
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
Cite this
Enami, M., Tsutsumi, K., Hirose, F., Katsuta, S., & Kobayashi, M. (2003). Molecular-beam epitaxial growth of ZnMgCdS layers and their application to UV-A photodetectors. Japanese Journal of Applied Physics, Part 2: Letters, 42(9 AB), L1047-L1049.