Molecular beam epitaxy growth and pole figure analysis of ZnTe epilayer on m-plane sapphire

Taizo Nakasu, Masakazu Kobayashi, Toshiaki Asahi, Hiroyoshi Togo

    Research output: Contribution to journalArticle

    14 Citations (Scopus)

    Abstract

    ZnTe epilayers were grown on transparent (10̄10) oriented (m-plane) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowtemperature buffer layer was carried out, and the influence of the buffer layer annealing on crystallographic properties was investigated. Pole figure imaging was used to study the domain distribution in the layer. It was shown that strongest (211)- and (100)-oriented ZnTe epilayers were formed on m-sapphire when a ZnTe buffer layer annealed at 340 ° for 5-min was inserted. Also, it was confirmed that only (211) ZnTe epilayers were formed on the 2° tilted m-plane sapphire substrate. Thus, the single domain (211) ZnTe epilayer can be grown on the m-plane sapphire using MBE.

    Original languageEnglish
    Article number015502
    JournalJapanese Journal of Applied Physics
    Volume53
    Issue number1
    DOIs
    Publication statusPublished - 2014 Jan

    Fingerprint

    Epilayers
    Molecular beam epitaxy
    Sapphire
    Poles
    sapphire
    poles
    molecular beam epitaxy
    Buffer layers
    buffers
    Substrates
    insertion
    Annealing
    Imaging techniques
    annealing

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Molecular beam epitaxy growth and pole figure analysis of ZnTe epilayer on m-plane sapphire. / Nakasu, Taizo; Kobayashi, Masakazu; Asahi, Toshiaki; Togo, Hiroyoshi.

    In: Japanese Journal of Applied Physics, Vol. 53, No. 1, 015502, 01.2014.

    Research output: Contribution to journalArticle

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