Molecular beam epitaxy growth and pole figure analysis of ZnTe epilayer on m-plane sapphire

Taizo Nakasu, Masakazu Kobayashi, Toshiaki Asahi, Hiroyoshi Togo

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ZnTe epilayers were grown on transparent (10̄10) oriented (m-plane) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowtemperature buffer layer was carried out, and the influence of the buffer layer annealing on crystallographic properties was investigated. Pole figure imaging was used to study the domain distribution in the layer. It was shown that strongest (211)- and (100)-oriented ZnTe epilayers were formed on m-sapphire when a ZnTe buffer layer annealed at 340 ° for 5-min was inserted. Also, it was confirmed that only (211) ZnTe epilayers were formed on the 2° tilted m-plane sapphire substrate. Thus, the single domain (211) ZnTe epilayer can be grown on the m-plane sapphire using MBE.

Original languageEnglish
Article number015502
JournalJapanese journal of applied physics
Issue number1
Publication statusPublished - 2014 Jan 1


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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