Molecular beam epitaxy growth of ZnTe epilayers on c-plane sapphire

Taizo Nakasu, Yuki Kumagai, Kimihiro Nishimura, Masakazu Kobayashi, Hiroyoshi Togo, Toshiaki Asahi

    Research output: Contribution to journalArticle

    23 Citations (Scopus)

    Abstract

    ZnTe epilayers were grown on transparent substrates by molecular beam epitaxy. The insertion of a low-temperature buffer layer was carried out, and the influence of the buffer layer thickness and its annealing on the crystallographic property were investigated. Pole figure imaging was used to study the domain distribution in the layer. It was shown that the (111) ZnTe epilayer with the decreased number of domains could be formed on c-sapphire when a 3.5-nm-thick annealed ZnTe buffer layer was inserted. It was shown that the XRD pole figure imaging was a useful means of analyzing domain distributions in the film.

    Original languageEnglish
    Article number095502
    JournalApplied Physics Express
    Volume5
    Issue number9
    DOIs
    Publication statusPublished - 2012 Sep

    Fingerprint

    Epilayers
    Buffer layers
    Molecular beam epitaxy
    Sapphire
    sapphire
    molecular beam epitaxy
    buffers
    Poles
    Imaging techniques
    poles
    Annealing
    insertion
    Substrates
    annealing
    Temperature

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Molecular beam epitaxy growth of ZnTe epilayers on c-plane sapphire. / Nakasu, Taizo; Kumagai, Yuki; Nishimura, Kimihiro; Kobayashi, Masakazu; Togo, Hiroyoshi; Asahi, Toshiaki.

    In: Applied Physics Express, Vol. 5, No. 9, 095502, 09.2012.

    Research output: Contribution to journalArticle

    Nakasu, Taizo ; Kumagai, Yuki ; Nishimura, Kimihiro ; Kobayashi, Masakazu ; Togo, Hiroyoshi ; Asahi, Toshiaki. / Molecular beam epitaxy growth of ZnTe epilayers on c-plane sapphire. In: Applied Physics Express. 2012 ; Vol. 5, No. 9.
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