Molecular beam epitaxy of CdS self-assembled quantum dots on ZnSe

Masakazu Kobayashi, S. Nakamura, K. Wakao, A. Yoshikawa, K. Takahashi

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Abstract

CdS quantum dot (QD) structures were grown by molecular beam epitaxy on (001) ZnSe. Circular QDs were observed from the sample grown at 220 °C, whereas rectangular QDs were observed from the sample grown at 280 °C. The difference of the dot shape may be related to the metastable nature of CdS since CdS thin films grown at 220 °C show zincblende structures and thin films grown at 280 °C show wurtzite structures. The PL peak position and linewidth were strongly affected by the growth condition of QDs; QD samples with a thicker CdS deposition showed redshifts of the peak position along with the narrowing of the linewidth.

Original languageEnglish
Pages (from-to)1316-1320
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number3
Publication statusPublished - 1998 May
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

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