CdS quantum dot (QD) structures were grown by molecular beam epitaxy on (001) ZnSe. Circular QDs were observed from the sample grown at 220 °C, whereas rectangular QDs were observed from the sample grown at 280 °C. The difference of the dot shape may be related to the metastable nature of CdS since CdS thin films grown at 220 °C show zincblende structures and thin films grown at 280 °C show wurtzite structures. The PL peak position and linewidth were strongly affected by the growth condition of QDs; QD samples with a thicker CdS deposition showed redshifts of the peak position along with the narrowing of the linewidth.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 1998 May|
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
- Surfaces and Interfaces