Molecular beam epitaxy of CdS self-assembled quantum dots on ZnSe

Masakazu Kobayashi, S. Nakamura, K. Wakao, A. Yoshikawa, K. Takahashi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

CdS quantum dot (QD) structures were grown by molecular beam epitaxy on (001) ZnSe. Circular QDs were observed from the sample grown at 220 °C, whereas rectangular QDs were observed from the sample grown at 280 °C. The difference of the dot shape may be related to the metastable nature of CdS since CdS thin films grown at 220 °C show zincblende structures and thin films grown at 280 °C show wurtzite structures. The PL peak position and linewidth were strongly affected by the growth condition of QDs; QD samples with a thicker CdS deposition showed redshifts of the peak position along with the narrowing of the linewidth.

Original languageEnglish
Pages (from-to)1316-1320
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number3
Publication statusPublished - 1998 May
Externally publishedYes

Fingerprint

Molecular beam epitaxy
Linewidth
Semiconductor quantum dots
molecular beam epitaxy
quantum dots
Thin films
zincblende
thin films
wurtzite

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Molecular beam epitaxy of CdS self-assembled quantum dots on ZnSe. / Kobayashi, Masakazu; Nakamura, S.; Wakao, K.; Yoshikawa, A.; Takahashi, K.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 3, 05.1998, p. 1316-1320.

Research output: Contribution to journalArticle

@article{d49b94e55c224b5fa971fde0feba2ed0,
title = "Molecular beam epitaxy of CdS self-assembled quantum dots on ZnSe",
abstract = "CdS quantum dot (QD) structures were grown by molecular beam epitaxy on (001) ZnSe. Circular QDs were observed from the sample grown at 220 °C, whereas rectangular QDs were observed from the sample grown at 280 °C. The difference of the dot shape may be related to the metastable nature of CdS since CdS thin films grown at 220 °C show zincblende structures and thin films grown at 280 °C show wurtzite structures. The PL peak position and linewidth were strongly affected by the growth condition of QDs; QD samples with a thicker CdS deposition showed redshifts of the peak position along with the narrowing of the linewidth.",
author = "Masakazu Kobayashi and S. Nakamura and K. Wakao and A. Yoshikawa and K. Takahashi",
year = "1998",
month = "5",
language = "English",
volume = "16",
pages = "1316--1320",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Molecular beam epitaxy of CdS self-assembled quantum dots on ZnSe

AU - Kobayashi, Masakazu

AU - Nakamura, S.

AU - Wakao, K.

AU - Yoshikawa, A.

AU - Takahashi, K.

PY - 1998/5

Y1 - 1998/5

N2 - CdS quantum dot (QD) structures were grown by molecular beam epitaxy on (001) ZnSe. Circular QDs were observed from the sample grown at 220 °C, whereas rectangular QDs were observed from the sample grown at 280 °C. The difference of the dot shape may be related to the metastable nature of CdS since CdS thin films grown at 220 °C show zincblende structures and thin films grown at 280 °C show wurtzite structures. The PL peak position and linewidth were strongly affected by the growth condition of QDs; QD samples with a thicker CdS deposition showed redshifts of the peak position along with the narrowing of the linewidth.

AB - CdS quantum dot (QD) structures were grown by molecular beam epitaxy on (001) ZnSe. Circular QDs were observed from the sample grown at 220 °C, whereas rectangular QDs were observed from the sample grown at 280 °C. The difference of the dot shape may be related to the metastable nature of CdS since CdS thin films grown at 220 °C show zincblende structures and thin films grown at 280 °C show wurtzite structures. The PL peak position and linewidth were strongly affected by the growth condition of QDs; QD samples with a thicker CdS deposition showed redshifts of the peak position along with the narrowing of the linewidth.

UR - http://www.scopus.com/inward/record.url?scp=0343085197&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343085197&partnerID=8YFLogxK

M3 - Article

VL - 16

SP - 1316

EP - 1320

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 3

ER -