MOLECULAR BEAM EPITAXY OF GaP AND GaAs//1// minus //xP//x.

Yuichi Matsushima, Shun ichi Gonda

Research output: Chapter in Book/Report/Conference proceedingChapter

32 Citations (Scopus)

Abstract

GaP and GaAs//1// minus //xP//x single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560 to about 600 degree C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs//1// minus //xP//x is dependent on the substrate temperature, T//s, and the intensity ratio P/As. The rate of decrease, minus dx/dT//s, is found to be 0. 003 degree C** minus **1 for the entire composition-ratio range.

Original languageEnglish
Title of host publicationJpn J Appl Phys
Pages2092-2101
Number of pages10
Volume15
Edition11
Publication statusPublished - 1976 Nov
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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