MOLECULAR BEAM EPITAXY OF GaP AND GaAs//1// minus //xP//x.

Yuichi Matsushima, Shun ichi Gonda

Research output: Chapter in Book/Report/Conference proceedingChapter

30 Citations (Scopus)

Abstract

GaP and GaAs//1// minus //xP//x single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560 to about 600 degree C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs//1// minus //xP//x is dependent on the substrate temperature, T//s, and the intensity ratio P/As. The rate of decrease, minus dx/dT//s, is found to be 0. 003 degree C** minus **1 for the entire composition-ratio range.

Original languageEnglish
Title of host publicationJpn J Appl Phys
Pages2092-2101
Number of pages10
Volume15
Edition11
Publication statusPublished - 1976 Nov
Externally publishedYes

Fingerprint

Substrates
Molecular beams
Chemical analysis
Molecular beam epitaxy
Temperature
Single crystals
Crystalline materials
Thin films

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Matsushima, Y., & Gonda, S. I. (1976). MOLECULAR BEAM EPITAXY OF GaP AND GaAs//1// minus //xP//x. In Jpn J Appl Phys (11 ed., Vol. 15, pp. 2092-2101)

MOLECULAR BEAM EPITAXY OF GaP AND GaAs//1// minus //xP//x. / Matsushima, Yuichi; Gonda, Shun ichi.

Jpn J Appl Phys. Vol. 15 11. ed. 1976. p. 2092-2101.

Research output: Chapter in Book/Report/Conference proceedingChapter

Matsushima, Y & Gonda, SI 1976, MOLECULAR BEAM EPITAXY OF GaP AND GaAs//1// minus //xP//x. in Jpn J Appl Phys. 11 edn, vol. 15, pp. 2092-2101.
Matsushima Y, Gonda SI. MOLECULAR BEAM EPITAXY OF GaP AND GaAs//1// minus //xP//x. In Jpn J Appl Phys. 11 ed. Vol. 15. 1976. p. 2092-2101
Matsushima, Yuichi ; Gonda, Shun ichi. / MOLECULAR BEAM EPITAXY OF GaP AND GaAs//1// minus //xP//x. Jpn J Appl Phys. Vol. 15 11. ed. 1976. pp. 2092-2101
@inbook{9d652d14ce834a09a4bc97dc56b37acc,
title = "MOLECULAR BEAM EPITAXY OF GaP AND GaAs//1// minus //xP//x.",
abstract = "GaP and GaAs//1// minus //xP//x single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560 to about 600 degree C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs//1// minus //xP//x is dependent on the substrate temperature, T//s, and the intensity ratio P/As. The rate of decrease, minus dx/dT//s, is found to be 0. 003 degree C** minus **1 for the entire composition-ratio range.",
author = "Yuichi Matsushima and Gonda, {Shun ichi}",
year = "1976",
month = "11",
language = "English",
volume = "15",
pages = "2092--2101",
booktitle = "Jpn J Appl Phys",
edition = "11",

}

TY - CHAP

T1 - MOLECULAR BEAM EPITAXY OF GaP AND GaAs//1// minus //xP//x.

AU - Matsushima, Yuichi

AU - Gonda, Shun ichi

PY - 1976/11

Y1 - 1976/11

N2 - GaP and GaAs//1// minus //xP//x single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560 to about 600 degree C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs//1// minus //xP//x is dependent on the substrate temperature, T//s, and the intensity ratio P/As. The rate of decrease, minus dx/dT//s, is found to be 0. 003 degree C** minus **1 for the entire composition-ratio range.

AB - GaP and GaAs//1// minus //xP//x single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560 to about 600 degree C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs//1// minus //xP//x is dependent on the substrate temperature, T//s, and the intensity ratio P/As. The rate of decrease, minus dx/dT//s, is found to be 0. 003 degree C** minus **1 for the entire composition-ratio range.

UR - http://www.scopus.com/inward/record.url?scp=0017023803&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0017023803&partnerID=8YFLogxK

M3 - Chapter

VL - 15

SP - 2092

EP - 2101

BT - Jpn J Appl Phys

ER -