Molecular beam epitaxy of gap and GaAs1−xPx

Yuichi Matsushima, Shunichi Gonda

Research output: Contribution to journalArticle

Abstract

GaP and GaAs1−xPx single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560-600 °C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs1−xPx is dependent on the substrate temperature, Ts, and the intensity ratio P/As. The rate of decrease,-dx/dTs, is found to be 0.003 °C−1 for the entire composition-ratio range.

Original languageEnglish
Pages (from-to)2093-2101
Number of pages9
JournalJapanese Journal of Applied Physics
Volume15
Issue number11
DOIs
Publication statusPublished - 1976
Externally publishedYes

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Molecular beam epitaxy
molecular beam epitaxy
Substrates
Molecular beams
Chemical analysis
Temperature
molecular beams
temperature
flat surfaces
tendencies
Single crystals
Crystalline materials
Thin films
single crystals
thin films

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Molecular beam epitaxy of gap and GaAs1−xPx. / Matsushima, Yuichi; Gonda, Shunichi.

In: Japanese Journal of Applied Physics, Vol. 15, No. 11, 1976, p. 2093-2101.

Research output: Contribution to journalArticle

Matsushima, Yuichi ; Gonda, Shunichi. / Molecular beam epitaxy of gap and GaAs1−xPx. In: Japanese Journal of Applied Physics. 1976 ; Vol. 15, No. 11. pp. 2093-2101.
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