GaSb and GaSb//xAs//1// minus //x single crystal thin films were successfully grown by molecular beam epitaxy. Undoped GaSb showed p-type conduction, and Te was found to be effective as a donor impurity for the MBE-grown GaSb. An in-depth profile of the electrical property of these films revealed that many defects are contained in the epitaxial layer near the interface between the grown layer and the substrate. GaSb//xAs//1// minus //x films with entire composition were prepared, and the energy gap measured by photoabsorption shows a downward bowing as a function of the composition.
|Number of pages||6|
|Journal||Jpn J Appl Phys|
|Publication status||Published - 1978 Dec|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)