MOLECULAR BEAM EPITAXY OF GaSb AND GaSb//xAs//1// minus //x.

Mitsuaki Yano, Yukio Suzuki, Tetsuo Ishii, Yuichi Matsushima, Morihiko Kimata

    Research output: Contribution to journalArticle

    48 Citations (Scopus)

    Abstract

    GaSb and GaSb//xAs//1// minus //x single crystal thin films were successfully grown by molecular beam epitaxy. Undoped GaSb showed p-type conduction, and Te was found to be effective as a donor impurity for the MBE-grown GaSb. An in-depth profile of the electrical property of these films revealed that many defects are contained in the epitaxial layer near the interface between the grown layer and the substrate. GaSb//xAs//1// minus //x films with entire composition were prepared, and the energy gap measured by photoabsorption shows a downward bowing as a function of the composition.

    Original languageEnglish
    Pages (from-to)2091-2096
    Number of pages6
    JournalJpn J Appl Phys
    Volume17
    Issue number12
    Publication statusPublished - 1978 Dec

    Fingerprint

    Molecular beam epitaxy
    Bending (forming)
    Epitaxial layers
    photoabsorption
    Chemical analysis
    Electric properties
    Energy gap
    molecular beam epitaxy
    electrical properties
    Single crystals
    Impurities
    conduction
    Thin films
    impurities
    Defects
    single crystals
    defects
    Substrates
    thin films
    profiles

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Yano, M., Suzuki, Y., Ishii, T., Matsushima, Y., & Kimata, M. (1978). MOLECULAR BEAM EPITAXY OF GaSb AND GaSb//xAs//1// minus //x. Jpn J Appl Phys, 17(12), 2091-2096.

    MOLECULAR BEAM EPITAXY OF GaSb AND GaSb//xAs//1// minus //x. / Yano, Mitsuaki; Suzuki, Yukio; Ishii, Tetsuo; Matsushima, Yuichi; Kimata, Morihiko.

    In: Jpn J Appl Phys, Vol. 17, No. 12, 12.1978, p. 2091-2096.

    Research output: Contribution to journalArticle

    Yano, M, Suzuki, Y, Ishii, T, Matsushima, Y & Kimata, M 1978, 'MOLECULAR BEAM EPITAXY OF GaSb AND GaSb//xAs//1// minus //x.', Jpn J Appl Phys, vol. 17, no. 12, pp. 2091-2096.
    Yano M, Suzuki Y, Ishii T, Matsushima Y, Kimata M. MOLECULAR BEAM EPITAXY OF GaSb AND GaSb//xAs//1// minus //x. Jpn J Appl Phys. 1978 Dec;17(12):2091-2096.
    Yano, Mitsuaki ; Suzuki, Yukio ; Ishii, Tetsuo ; Matsushima, Yuichi ; Kimata, Morihiko. / MOLECULAR BEAM EPITAXY OF GaSb AND GaSb//xAs//1// minus //x. In: Jpn J Appl Phys. 1978 ; Vol. 17, No. 12. pp. 2091-2096.
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