MOLECULAR BEAM EPITAXY OF GaSb AND GaSb//xAs//1// minus //x.

Mitsuaki Yano, Yukio Suzuki, Tetsuo Ishii, Yuichi Matsushima, Morihiko Kimata

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    Abstract

    GaSb and GaSb//xAs//1// minus //x single crystal thin films were successfully grown by molecular beam epitaxy. Undoped GaSb showed p-type conduction, and Te was found to be effective as a donor impurity for the MBE-grown GaSb. An in-depth profile of the electrical property of these films revealed that many defects are contained in the epitaxial layer near the interface between the grown layer and the substrate. GaSb//xAs//1// minus //x films with entire composition were prepared, and the energy gap measured by photoabsorption shows a downward bowing as a function of the composition.

    Original languageEnglish
    Pages (from-to)2091-2096
    Number of pages6
    JournalJpn J Appl Phys
    Volume17
    Issue number12
    Publication statusPublished - 1978 Dec

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    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Yano, M., Suzuki, Y., Ishii, T., Matsushima, Y., & Kimata, M. (1978). MOLECULAR BEAM EPITAXY OF GaSb AND GaSb//xAs//1// minus //x. Jpn J Appl Phys, 17(12), 2091-2096.