Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb

D. L. Mathine, S. M. Durbin, R. L. Gunshor, Masakazu Kobayashi, D. R. Menke, J. Gonsalves, N. Otsuka, Q. Fu, M. Hagerott, A. V. Nurmikko

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The difficulty in achieving the amphoteric doping of wide gap II-VI semiconductors for use in light emitting devices suggests the merits of heterojunction injection. This paper discusses the first epilayer/epilayer ZnTe/AlSb/GaSb heterojunctions grown by MBE. Pseudomorphic ZnTe layers were nucleated on pseudomorphic AlSb layers; the AlSb was grown on homoepitaxial GaSb buffer layers. Free exciton related features were observed in the photoluminescence of ZnTe; dominant features of the PL corresponded to near band-edge transitions. Microstructural quality was examined using TEM and X-ray rocking curves. Cross-sectional TEM images reveal atomically flat interfaces. X-ray rocking curve full width at half maximum values were close to the theoretically expected broadening due to the finite layer thickness.

Original languageEnglish
Pages (from-to)344-346
Number of pages3
JournalSurface Science
Volume228
Issue number1-3
DOIs
Publication statusPublished - 1990 Apr 1
Externally publishedYes

Fingerprint

Epilayers
Molecular beam epitaxy
Heterojunctions
molecular beam epitaxy
Transmission electron microscopy
X rays
Buffer layers
Full width at half maximum
Excitons
heterojunctions
Photoluminescence
Doping (additives)
transmission electron microscopy
curves
x rays
buffers
excitons
injection
photoluminescence
II-VI semiconductors

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Mathine, D. L., Durbin, S. M., Gunshor, R. L., Kobayashi, M., Menke, D. R., Gonsalves, J., ... Nurmikko, A. V. (1990). Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb. Surface Science, 228(1-3), 344-346. https://doi.org/10.1016/0039-6028(90)90324-2

Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb. / Mathine, D. L.; Durbin, S. M.; Gunshor, R. L.; Kobayashi, Masakazu; Menke, D. R.; Gonsalves, J.; Otsuka, N.; Fu, Q.; Hagerott, M.; Nurmikko, A. V.

In: Surface Science, Vol. 228, No. 1-3, 01.04.1990, p. 344-346.

Research output: Contribution to journalArticle

Mathine, DL, Durbin, SM, Gunshor, RL, Kobayashi, M, Menke, DR, Gonsalves, J, Otsuka, N, Fu, Q, Hagerott, M & Nurmikko, AV 1990, 'Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb', Surface Science, vol. 228, no. 1-3, pp. 344-346. https://doi.org/10.1016/0039-6028(90)90324-2
Mathine DL, Durbin SM, Gunshor RL, Kobayashi M, Menke DR, Gonsalves J et al. Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb. Surface Science. 1990 Apr 1;228(1-3):344-346. https://doi.org/10.1016/0039-6028(90)90324-2
Mathine, D. L. ; Durbin, S. M. ; Gunshor, R. L. ; Kobayashi, Masakazu ; Menke, D. R. ; Gonsalves, J. ; Otsuka, N. ; Fu, Q. ; Hagerott, M. ; Nurmikko, A. V. / Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb. In: Surface Science. 1990 ; Vol. 228, No. 1-3. pp. 344-346.
@article{4f4b59fd321040b4928174e47525b8bd,
title = "Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb",
abstract = "The difficulty in achieving the amphoteric doping of wide gap II-VI semiconductors for use in light emitting devices suggests the merits of heterojunction injection. This paper discusses the first epilayer/epilayer ZnTe/AlSb/GaSb heterojunctions grown by MBE. Pseudomorphic ZnTe layers were nucleated on pseudomorphic AlSb layers; the AlSb was grown on homoepitaxial GaSb buffer layers. Free exciton related features were observed in the photoluminescence of ZnTe; dominant features of the PL corresponded to near band-edge transitions. Microstructural quality was examined using TEM and X-ray rocking curves. Cross-sectional TEM images reveal atomically flat interfaces. X-ray rocking curve full width at half maximum values were close to the theoretically expected broadening due to the finite layer thickness.",
author = "Mathine, {D. L.} and Durbin, {S. M.} and Gunshor, {R. L.} and Masakazu Kobayashi and Menke, {D. R.} and J. Gonsalves and N. Otsuka and Q. Fu and M. Hagerott and Nurmikko, {A. V.}",
year = "1990",
month = "4",
day = "1",
doi = "10.1016/0039-6028(90)90324-2",
language = "English",
volume = "228",
pages = "344--346",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb

AU - Mathine, D. L.

AU - Durbin, S. M.

AU - Gunshor, R. L.

AU - Kobayashi, Masakazu

AU - Menke, D. R.

AU - Gonsalves, J.

AU - Otsuka, N.

AU - Fu, Q.

AU - Hagerott, M.

AU - Nurmikko, A. V.

PY - 1990/4/1

Y1 - 1990/4/1

N2 - The difficulty in achieving the amphoteric doping of wide gap II-VI semiconductors for use in light emitting devices suggests the merits of heterojunction injection. This paper discusses the first epilayer/epilayer ZnTe/AlSb/GaSb heterojunctions grown by MBE. Pseudomorphic ZnTe layers were nucleated on pseudomorphic AlSb layers; the AlSb was grown on homoepitaxial GaSb buffer layers. Free exciton related features were observed in the photoluminescence of ZnTe; dominant features of the PL corresponded to near band-edge transitions. Microstructural quality was examined using TEM and X-ray rocking curves. Cross-sectional TEM images reveal atomically flat interfaces. X-ray rocking curve full width at half maximum values were close to the theoretically expected broadening due to the finite layer thickness.

AB - The difficulty in achieving the amphoteric doping of wide gap II-VI semiconductors for use in light emitting devices suggests the merits of heterojunction injection. This paper discusses the first epilayer/epilayer ZnTe/AlSb/GaSb heterojunctions grown by MBE. Pseudomorphic ZnTe layers were nucleated on pseudomorphic AlSb layers; the AlSb was grown on homoepitaxial GaSb buffer layers. Free exciton related features were observed in the photoluminescence of ZnTe; dominant features of the PL corresponded to near band-edge transitions. Microstructural quality was examined using TEM and X-ray rocking curves. Cross-sectional TEM images reveal atomically flat interfaces. X-ray rocking curve full width at half maximum values were close to the theoretically expected broadening due to the finite layer thickness.

UR - http://www.scopus.com/inward/record.url?scp=33747222687&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33747222687&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(90)90324-2

DO - 10.1016/0039-6028(90)90324-2

M3 - Article

VL - 228

SP - 344

EP - 346

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-3

ER -