Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb

D. L. Mathine, S. M. Durbin, R. L. Gunshor, M. Kobayashi, D. R. Menke, J. Gonsalves, N. Otsuka, Q. Fu, M. Hagerott, A. V. Nurmikko

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Abstract

The difficulty in achieving the amphoteric doping of wide gap II-VI semiconductors for use in light emitting devices suggests the merits of heterojunction injection. This paper discusses the first epilayer/epilayer ZnTe/AlSb/GaSb heterojunctions grown by MBE. Pseudomorphic ZnTe layers were nucleated on pseudomorphic AlSb layers; the AlSb was grown on homoepitaxial GaSb buffer layers. Free exciton related features were observed in the photoluminescence of ZnTe; dominant features of the PL corresponded to near band-edge transitions. Microstructural quality was examined using TEM and X-ray rocking curves. Cross-sectional TEM images reveal atomically flat interfaces. X-ray rocking curve full width at half maximum values were close to the theoretically expected broadening due to the finite layer thickness.

Original languageEnglish
Pages (from-to)344-346
Number of pages3
JournalSurface Science
Volume228
Issue number1-3
DOIs
Publication statusPublished - 1990 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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    Mathine, D. L., Durbin, S. M., Gunshor, R. L., Kobayashi, M., Menke, D. R., Gonsalves, J., Otsuka, N., Fu, Q., Hagerott, M., & Nurmikko, A. V. (1990). Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb. Surface Science, 228(1-3), 344-346. https://doi.org/10.1016/0039-6028(90)90324-2